Polishing behavior of PS/CeO₂ hybrid microspheres with controlled shell thickness on silicon dioxide CMPYANG CHEN; RENWEI LONG.Applied surface science. 2011, Vol 257, Num 20, pp 8679-8685, issn 0169-4332, 7 p.Article

Microstructural effects on the formation and degradation of zinc phosphate coatings on 2024-A1 alloyAKHTAR, A. S; WONG, P. C; WONG, K. C et al.Applied surface science. 2008, Vol 254, Num 15, pp 4813-4819, issn 0169-4332, 7 p.Article

Novel slurry solution for dishing elimination in copper process beyond 0.1-μm technologyCHEN, K. W; WANG, Y. L; LIU, C. P et al.Thin solid films. 2006, Vol 498, Num 1-2, pp 50-55, issn 0040-6090, 6 p.Conference Paper

Giant traps on the surface of hydride vapor phase epitaxy-grown free-standing GaNFANG, Z.-Q; LOOK, D. C; KRTSCHIL, A et al.Journal of electronic materials. 2006, Vol 35, Num 4, pp 613-617, issn 0361-5235, 5 p.Article

A chemical kinetics model for a mixed-abrasive chemical mechanical polishingPING HSUN CHEN; BING WEI HUANG; HAN CHANG SHIH et al.Thin solid films. 2005, Vol 483, Num 1-2, pp 239-244, issn 0040-6090, 6 p.Article

Effects of slurry components on the surface characteristics when chemical mechanical polishing NiP/Al substrateLIN, Shih-Chieh; HUANG, Huang-Chieh; HONG HOCHENG et al.Thin solid films. 2005, Vol 483, Num 1-2, pp 400-406, issn 0040-6090, 7 p.Article

Subsurface damage in alumina and alumina-silicon carbide nanocompositesTANNER, B. K; WU, H. Z; ROBERTS, S. G et al.Philosophical magazine (2003. Print). 2004, Vol 84, Num 12, pp 1219-1232, issn 1478-6435, 14 p.Article

A mathematical model for chemical-mechanical polishing based on formation and removal of weakly bonded molecular speciesYONGWU ZHAO; CHANG, L; KIM, S. H et al.Wear. 2003, Vol 254, Num 3-4, pp 332-339, issn 0043-1648, 8 p.Article

The use of reliability in the Taguchi method for the optimisation of the polishing ceramic gauge blockLIN, Tsann-Rong.International journal, advanced manufacturing technology. 2003, Vol 22, Num 3-4, pp 237-242, issn 0268-3768, 6 p.Article

Gas cluster ion beam processing of gallium antimonide wafers for surface and sub-surface damage reductionLI, X; GOODHUE, W. D; SANTEUFEIMIO, C et al.Applied surface science. 2003, Vol 218, Num 1-4, pp 250-257, issn 0169-4332, 8 p.Article

High spatial resolution Makyoh topography using shifted grid illuminationLUKACS, Istvan E; RIESZ, Ferenc; LACZIK, Zsolt J et al.Physica status solidi. A. Applied research. 2003, Vol 195, Num 1, pp 271-276, issn 0031-8965, 6 p.Conference Paper

Amorphization and chemical modification of β-BaB2O4 surface by polishingATUCHIN, V. V; HASANOV, T; KESLER, V. G et al.Optical materials (Amsterdam). 2003, Vol 23, Num 1-2, pp 385-392, issn 0925-3467, 8 p.Conference Paper

CVD growth of carbon nanotube films on nickel substratesKUKOVITSKY, E. F; L'VOV, S. G; SAINOV, N. A et al.Applied surface science. 2003, Vol 215, Num 1-4, pp 201-208, issn 0169-4332, 8 p.Conference Paper

Rheodynamic precision surface treatment controlled by a magnetic fieldZHURAVSKII, N. A; POLESSKII, D. E; PROKHOROV, I. V et al.Journal of engineering physics and thermophysics. 2002, Vol 75, Num 2, pp 390-395, issn 1062-0125Article

A model of chemical mechanical polishingPAUL, Ed.Journal of the Electrochemical Society. 2001, Vol 148, Num 6, pp G355-G358, issn 0013-4651Article

A model of abrasive-free removal of copper films using an aqueous hydrogen peroxide-glycine solutionLU ZHANG; SHANKAR SUBRAMANIAN, R.Thin solid films. 2001, Vol 397, Num 1-2, pp 143-151, issn 0040-6090Article

Effects of process parameter variations on the removal rate in chemical mechanical polishing of 4H-SiCNESLEN, C. L; MITCHEL, W. C; HENGEHOLD, R. L et al.Journal of electronic materials. 2001, Vol 30, Num 10, pp 1271-1275, issn 0361-5235Article

Abrasion and dissolution interaction of Al in a phosphoric acid solutionTSAI, Wen-Ta; HUANG, Tsung-Min.Thin solid films. 2000, Vol 379, Num 1-2, pp 107-113, issn 0040-6090Article

Cluster ion beam smoothing of SiC and YBCO surfacesFATHY, D; HOLLAND, O. W; LIU, R et al.Materials letters (General ed.). 2000, Vol 44, Num 3-4, pp 248-252, issn 0167-577XArticle

Microstructure-related resistivity change after chemical-mechanical polish of Al and W thin filmsTSENG, W.-T; WANG, Y.-L; NIU, J et al.Thin solid films. 2000, Vol 370, Num 1-2, pp 96-100, issn 0040-6090Article

Laser polishing of diamond platesPIMENOV, S. M; KONONENKO, V. V; RALCHENKO, V. G et al.Applied physics. A, Materials science & processing (Print). 1999, Vol 69, Num 1, pp 81-88, issn 0947-8396Article

Stereometrische Eigenschaften der glattgewalzten Oberfläche der Bohrungen in Gusswerkstücken = Stereometric properties of burnished surface of drilled cast componentsTUBIELEWICZ, K; SKONECZNY, W; POSMYK, A et al.Tribologie und Schmierungstechnik. 1999, Vol 46, Num 6, pp 4-10, issn 0724-3472Article

Al_xGa_1-xAs (111)A substrate with atomically flat polished surfaceSAWAFUJI, Y; NISHIZAWA, J.-I.Journal of the Electrochemical Society. 1999, Vol 146, Num 11, pp 4253-4255, issn 0013-4651Article

Effects of film stress on the chemical mechanical polishing processTSENG, W.-T; WANG, Y.-H; CHIN, J.-H et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 11, pp 4273-4280, issn 0013-4651Article

Kinematic analysis and measurement of temperature rise on a pad in chemical mechanical planarizationHONG HOCHENG; HUANG, Y.-L; CHEN, L.-J et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 11, pp 4236-4239, issn 0013-4651Article