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The thermal effect of GaN Schottky diode on its I-V characteristicsCHUNG, S. W; HWANG, W. J; LEE, Chin C et al.Journal of crystal growth. 2004, Vol 268, Num 3-4, pp 607-611, issn 0022-0248, 5 p.Conference Paper

Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier heightROCCAFORTE, F; LA VIA, F; RAINERI, V et al.Applied physics. A, Materials science & processing (Print). 2003, Vol 77, Num 6, pp 827-833, issn 0947-8396, 7 p.Article

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Electrical and optical characterization of (1 1 1) oriented GaP/Si diodes grown by CBEOHLSSON, B. J; CARLSSON, S.-B; GUSTAFSSON, A et al.Journal of crystal growth. 2000, Vol 209, Num 2-3, pp 454-458, issn 0022-0248Conference Paper

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Evidence of phonon-absorption-assisted electron resonant tunneling in Si/Si_1-xGe_x diodesMATUTINOVIC-KRSTELJ, Z; LIU, C. W; XIAO, X et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 3, pp 1145-1148, issn 1071-1023Conference Paper

Fabrication and characterization of Fe³⁺-doped titania semiconductor electrodes with p-n homojunction devicesLIAU, Leo Chau-Kuang; LIN, Chu-Che.Applied surface science. 2007, Vol 253, Num 21, pp 8798-8801, issn 0169-4332, 4 p.Article

Modelling of single-crystal diamond schottky diodes for high-voltage applicationsRASHID, S. J; TAJANI, A; TAYLOR, P et al.Diamond and related materials. 2006, Vol 15, Num 2-3, pp 317-323, issn 0925-9635, 7 p.Conference Paper

Design of edge termination for GaN power Schottky diodesLAROCHE, J. R; REN, F; BAIK, K. W et al.Journal of electronic materials. 2005, Vol 34, Num 4, pp 370-374, issn 0361-5235, 5 p.Article

Design of a gas sensitive transparent heterojunction : The system SrCu₂O₂-ZnONAKAMURA, Yoshinobu; YOSHIDA, Yasuhiro; HONAGA, Yumiko et al.Journal of the European Ceramic Society. 2005, Vol 25, Num 12, pp 2167-2170, issn 0955-2219, 4 p.Conference Paper

The modulation of electrical carrier transport in metal-MPCVD diamond due to the microcrystalline inhomogeneous barriersMADALENO, J. C; PEREIRA, L.Diamond and related materials. 2005, Vol 14, Num 3-7, pp 584-588, issn 0925-9635, 5 p.Conference Paper

Long wavelength infrared, molecular beam epitaxy, HgCdTe-on-Si diode performanceCARMODY, M; PASKO, J. G; DHAR, N. K et al.Journal of electronic materials. 2004, Vol 33, Num 6, pp 531-537, issn 0361-5235, 7 p.Conference Paper

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Local two-dimensional electron gas formation in p-doped GaAs/In_yGa_1-yAs/Al_xGa_1-xAs heterostructures by focused Si-implantation dopingREUTER, D; MEIER, C; RIEDESEL, C et al.Semiconductor science and technology. 2002, Vol 17, Num 6, pp 585-589, issn 0268-1242Article

Monte Carlo modelling of multiple-transit-region Gunn diodesTEOH, Y. P; DUNN, G. M; PRIESTLEY, N et al.Semiconductor science and technology. 2002, Vol 17, Num 10, pp 1090-1095, issn 0268-1242Article