Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("8530P")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 477

  • Page / 20
Export

Selection :

  • and

Testing of application specific integrated circuit in LabVIEW environmentMAJ, Piotr.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6431-7, vol1, 63470H.1-63470H.5Conference Paper

Water Electrolysis and Energy Harvesting with Zero-Dimensional lon-Sensitive Field-Effect TransistorsCLEMENT, N; NISHIGUCHI, K; DUFRECHE, J. F et al.Nano letters (Print). 2013, Vol 13, Num 8, pp 3903-3908, issn 1530-6984, 6 p.Article

Modularized Construction of General Integrated Circuits on Individual Carbon NanotubesTIAN PEI; PANPAN ZHANG; ZHIYONG ZHANG et al.Nano letters (Print). 2014, Vol 14, Num 6, pp 3102-3109, issn 1530-6984, 8 p.Article

Measurement of the Rate of Water Translocation through Carbon NanotubesXINGCAI QIN; QUANZI YUAN; YAPU ZHAO et al.Nano letters (Print). 2011, Vol 11, Num 5, pp 2173-2177, issn 1530-6984, 5 p.Article

Exciton optoelectronic transistorHIGH, A. A; HAMMACK, A. T; BUTOV, L. V et al.Optics letters. 2007, Vol 32, Num 17, pp 2466-2468, issn 0146-9592, 3 p.Article

Field-Effect Transistors Based on WS2 Nanotubes with High Current-Carrying CapacityLEVI, Roi; BITTON, Ora; LEITUS, Gregory et al.Nano letters (Print). 2013, Vol 13, Num 8, pp 3736-3741, issn 1530-6984, 6 p.Article

Organic field-effect transistors VII and organic semiconductors in sensors and bioelectronic (10-12 August 2008, San Diego, California, USA)Bao, Zhenan.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7054, issn 0277-786X, isbn 978-0-8194-7274-8 0-8194-7274-3, 1Vol, various pagings, isbn 978-0-8194-7274-8 0-8194-7274-3Conference Proceedings

Graphene Transistor as a Probe for Streaming PotentialNEWAZ, A. K. M; MARKOV, D. A; PRASAI, D et al.Nano letters (Print). 2012, Vol 12, Num 6, pp 2931-2935, issn 1530-6984, 5 p.Article

The Effect of Electrostatic Screening on a Nanometer Scale ElectrometerMACLEAN, Kenneth; MENTZEL, Tamar S; KASTNER, Marc A et al.Nano letters (Print). 2011, Vol 11, Num 1, pp 30-34, issn 1530-6984, 5 p.Article

A continuous current model of ultra-thin cylindrical surrounding-gate inversion-mode Si nanowire nMOSFETs considering a wide range of body doping concentrationXIAOSHI JIN; XI LIU; MEILE WU et al.Semiconductor science and technology. 2013, Vol 28, Num 1, issn 0268-1242, 015002.1-015002.6Article

Nanometer size field effect transistors for terahertz detectors : TERAHERTZ NANOTECHNOLOGYKNAP, W; RUMYANTSEV, S; VITIELLO, M. S et al.Nanotechnology (Bristol. Print). 2013, Vol 24, Num 21, issn 0957-4484, 214002.1-214002.10Article

Transmission electron microscope study of a threading dislocation with b = [0001] + 〈1100〉 and its effect on leakage in a 4H―SiC MOSFETONDA, Shoichi; WATANABE, Hiroki; KITO, Yasuo et al.Philosophical magazine letters. 2013, Vol 93, Num 7-9, pp 439-447, issn 0950-0839, 9 p.Article

Ultrasensitive Flexible Graphene Based Field-Effect Transistor (FET)-Type Bioelectronic NoseSEON JOO PARK; OH SEOK KWON; SANG HUN LEE et al.Nano letters (Print). 2012, Vol 12, Num 10, pp 5082-5090, issn 1530-6984, 9 p.Article

Effect of uniaxial strain on the subthreshold swing of ballistic carbon nanotube FETsYOUSEFI, R.Physica. E, low-dimentional systems and nanostructures. 2011, Vol 43, Num 10, pp 1896-1901, issn 1386-9477, 6 p.Article

Optimal Character-Size Exploration for Increasing Throughput of MCC Lithographic SystemsSUGIHARA, Makoto.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7271, issn 0277-786X, isbn 978-0-8194-7524-4 0-8194-7524-6, 72710L.1-72710L.12, 2Conference Paper

On the detailed mechanism of the burn-in in GaInP/GaAs HBTsCABRERA-ARENAS, V; MIMILA-ARROYO, J.Physica status solidi. B. Basic research. 2005, Vol 242, Num 9, pp 1937-1941, issn 0370-1972, 5 p.Conference Paper

Analysis of the current conduction in poly-Si thin film transistorsZHEN ZHU; JUNHAO CHU.Semiconductor science and technology. 2013, Vol 28, Num 1, issn 0268-1242, 015017.1-015017.6Article

Doping-free fabrication of n-type random network single-walled carbon nanotube field effect transistor with yttrium contactsLEIHUA HUANG; ENG FONG CHOR; YIHONG WU et al.Physica. E, low-dimentional systems and nanostructures. 2011, Vol 43, Num 7, pp 1365-1370, issn 1386-9477, 6 p.Article

Three-Terminal Nanoelectromechanical Field Effect Transistor with Abrupt Subthreshold SlopeKIM, Ji-Hun; CHEN, Zack C. Y; SOONSHIN KWON et al.Nano letters (Print). 2014, Vol 14, Num 3, pp 1687-1691, issn 1530-6984, 5 p.Article

CMOS low-power bandwidth-improved derivative superposition mixer using parasitic NPN BJTsKEPING WANG; XUEMEI LEI.Electronics letters. 2013, Vol 49, Num 25, pp 1605-1607, issn 0013-5194, 3 p.Article

Line Width Roughness Effects on Device Performance: The Role of the Gate Width DesignCONSTANTOUDIS, V; GOGOLIDES, E; PATSIS, G. P et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7641, issn 0277-786X, isbn 978-0-8194-8055-2 0-8194-8055-X, 764116.1-764116.8Conference Paper

A Nanoscale Piezoelectric Transformer for Low-Voltage TransistorsAGARWAL, Sapan; YABLONOVITCH, Eli.Nano letters (Print). 2014, Vol 14, Num 11, pp 6263-6268, issn 1530-6984, 6 p.Article

Carbon nanotube : molecular resonant tunneling diodePANDEY, Rajeev R; BRUQUE, Nicolas; ALAM, Khairul et al.Physica status solidi. A. Applied research. 2006, Vol 203, Num 2, pp R5-R7, issn 0031-8965Article

Experimental Observation of Negative Capacitance in Ferroelectrics at Room TemperatureAPPLEBY, Daniel J. R; PONON, Nikhil K; KWA, Kelvin S. K et al.Nano letters (Print). 2014, Vol 14, Num 7, pp 3864-3868, issn 1530-6984, 5 p.Article

Thermal warpage of a glass substrate during Xe-arc flash lamp crystallization of amorphous silicon thin-filmJIN, Won-Beom; YEONSOO PARK; KIM, Byung-Kuk et al.International journal of thermal sciences. 2014, Num 83, pp 25-32, issn 1290-0729, 8 p.Article

  • Page / 20