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A novel scaling-parameter-dependent subthreshold swing model for double-gate (DG) SOI MOSFETs: including effective conducting path effect (ECPE)CHIANG, T. K.Semiconductor science and technology. 2004, Vol 19, Num 12, pp 1386-1390, issn 0268-1242, 5 p.Article
Mesoscopic effects in a single-mode Datta-Das spin field-effect transistorLEE, Hyun-Woo; CALISKAN, S; PARK, Hyowon et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 15, pp 153305.1-153305.4, issn 1098-0121Article
An ambipolar organic field-effect transistor using oligothiophene incorporated with two [60]fullerenesKUNUGI, Yoshihito; TAKIMIYA, Kazuo; NEGISHI, Nobukazu et al.Journal of material chemistry. 2004, Vol 14, Num 19, pp 2840-2841, issn 0959-9428, 2 p.Article
Synthesis and field-effect properties of α,ω-disubstituted sexithiophenes bearing polar groupsDELL'AQUILA, Antonio; MASTRORILLI, Piero; FRANCESCO NOBILE, Cosimo et al.Journal of material chemistry. 2006, Vol 16, Num 12, pp 1183-1191, issn 0959-9428, 9 p.Article
An analytical approach based on neural computation to estimate the lifetime of deep submicron MOSFETsDJEFFAL, F; GUESSASMA, S; BENHAYA, A et al.Semiconductor science and technology. 2005, Vol 20, Num 2, pp 158-164, issn 0268-1242, 7 p.Article
Synthesis, physical properties, and field-effect transistors of novel thiophene/thiazolothiazole co-oligomersANDO, Shinji; NISHIDA, Jun-Ichi; INOUE, Youji et al.Journal of material chemistry. 2004, Vol 14, Num 12, pp 1787-1790, issn 0959-9428, 4 p.Article
Graphene Field-Effect Transistors with Gigahertz-Frequency Power Gain on Flexible SubstratesPETRONE, Nicholas; MERIC, Inane; HONE, James et al.Nano letters (Print). 2013, Vol 13, Num 1, pp 121-125, issn 1530-6984, 5 p.Article
Graphene Transistor as a Probe for Streaming PotentialNEWAZ, A. K. M; MARKOV, D. A; PRASAI, D et al.Nano letters (Print). 2012, Vol 12, Num 6, pp 2931-2935, issn 1530-6984, 5 p.Article
Characterization and modelling of MOSFET operating at cryogenic temperature for hybrid superconductor-CMOS circuitsYIJUN FENG; PENG ZHOU; HONGYING LIU et al.Semiconductor science and technology. 2004, Vol 19, Num 12, pp 1381-1385, issn 0268-1242, 5 p.Article
Graphene- and aptamer-based electrochemical biosensorKE XU; MESHIK, Xenia; NICHOLS, Barbara M et al.Nanotechnology (Bristol. Print). 2014, Vol 25, Num 20, issn 0957-4484, 205501.1-205501.8Article
Field-Effect Transistors Based on WS2 Nanotubes with High Current-Carrying CapacityLEVI, Roi; BITTON, Ora; LEITUS, Gregory et al.Nano letters (Print). 2013, Vol 13, Num 8, pp 3736-3741, issn 1530-6984, 6 p.Article
Error analysis of boundary condition approximations in the modeling of coaxially-gated carbon nanotube field-effect transistorsMCGUIRE, Dylan L; PULFREY, David L.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 6, pp 1111-1116, issn 1862-6300, 6 p.Conference Paper
High frequency degradation of body-contacted PD SOI MOSFET output conductanceLEDERER, Dimitri; FLANDRE, Denis; RASKIN, Jean-Pierre et al.Semiconductor science and technology. 2005, Vol 20, Num 5, pp 469-472, issn 0268-1242, 4 p.Article
Scaling capability improvement of silicon-on-void (SOV) MOSFETYU TIAN; WEIHAI BU; DAKE WU et al.Semiconductor science and technology. 2005, Vol 20, Num 2, pp 115-119, issn 0268-1242, 5 p.Article
Impact of the material properties on the coupling thermal and electrical analysis of semiconductor devicesMARUYAMA, Hirohisa; FUSHINOBU, Kazuyoshi; OKAZAKI, Ken et al.International heat transfer conference. 2002, pp 441-446, isbn 2-84299-308-X, 6 p.Conference Paper
Modularized Construction of General Integrated Circuits on Individual Carbon NanotubesTIAN PEI; PANPAN ZHANG; ZHIYONG ZHANG et al.Nano letters (Print). 2014, Vol 14, Num 6, pp 3102-3109, issn 1530-6984, 8 p.Article
Direct top-down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resistsJUNGHO PARK; HO, Jonathan; HOYEOL YUN et al.Applied physics. A, Materials science & processing (Print). 2013, Vol 111, Num 4, pp 1051-1056, issn 0947-8396, 6 p.Article
High on/off current ratio in ballistic CNTFETs based on tuning the gate insulator parameters for different ambient temperaturesSHIRAZI, Shaahin G; MIRZAKUCHAKI, Sattar.Applied physics. A, Materials science & processing (Print). 2013, Vol 113, Num 2, pp 447-457, issn 0947-8396, 11 p.Article
Measurement of the Rate of Water Translocation through Carbon NanotubesXINGCAI QIN; QUANZI YUAN; YAPU ZHAO et al.Nano letters (Print). 2011, Vol 11, Num 5, pp 2173-2177, issn 1530-6984, 5 p.Article
Assessment of H-intercalated graphene for microwave FETs through material characterization and electron transport studiesWINTERS, M; HABIBPOUR, O; IVANOU, I. G et al.Carbon (New York, NY). 2015, Vol 81, pp 96-104, issn 0008-6223, 9 p.Article
Three-Terminal Nanoelectromechanical Field Effect Transistor with Abrupt Subthreshold SlopeKIM, Ji-Hun; CHEN, Zack C. Y; SOONSHIN KWON et al.Nano letters (Print). 2014, Vol 14, Num 3, pp 1687-1691, issn 1530-6984, 5 p.Article
Effect of Processing Additive on the Nanomorphology of a Bulk Heterojunction MaterialJI SUN MOON; TAKACS, Christopher J; CHO, Shinuk et al.Nano letters (Print). 2010, Vol 10, Num 10, pp 4005-4008, issn 1530-6984, 4 p.Article
Carbon Nanotubes as Injection Electrodes for Organic Thin Film TransistorsAGUIRRE, C. M; TERNON, C; PAILLET, M et al.Nano letters (Print). 2009, Vol 9, Num 4, pp 1457-1461, issn 1530-6984, 5 p.Article
Effects of body doping on threshold voltage and channel potential of symmetric DG MOSFETs with continuous solution from accumulation to strong-inversion regionsFENG LIU; LINING ZHANG; JIAN ZHANG et al.Semiconductor science and technology. 2009, Vol 24, Num 8, issn 0268-1242, 095005.1-095005.8Article
Phase Control of Graphene Nanoribbon by Carrier Doping : Appearance of Noncollinear MagnetismSAWADA, Keisuke; ISHII, Fumiyuki; SAITO, Mineo et al.Nano letters (Print). 2009, Vol 9, Num 1, pp 269-272, issn 1530-6984, 4 p.Article