Growth and characteristics of annealed ZnO layer on 6H―SiC substrateLEE, Ju-Young; HONG SEUNG KIM; LEE, Won-Jae et al.Journal of crystal growth. 2010, Vol 312, Num 16-17, pp 2393-2397, issn 0022-0248, 5 p.Article

AFM study of surface morphology of {100} cleavage planes of L-arginine acetate crystalsGENG, Y. L; XU, D; WANG, X. Q et al.Journal of crystal growth. 2005, Vol 282, Num 1-2, pp 208-213, issn 0022-0248, 6 p.Article

Crystal growth of MgO thin films deposited on ZnO underlayers by magnetron sputteringKATO, Kazuhiro; OMOTO, Hideo; TAKAMATSU, Atsushi et al.Journal of crystal growth. 2011, Vol 333, Num 1, pp 59-65, issn 0022-0248, 7 p.Article

Distinctions in the Ge wetting layer formation and self-assembled island nucleation between single- and multilayer SiGe/Si(0 0 1) structuresYURASOV, D. V; SHALEEV, M. V; NOVIKOV, A. V et al.Journal of crystal growth. 2010, Vol 313, Num 1, pp 12-15, issn 0022-0248, 4 p.Article

Effect of initial process conditions on the structural properties of AlN filmsPADUANO, Q. S; WEYBURNE, D. W; JASINSKI, J et al.Journal of crystal growth. 2004, Vol 261, Num 2-3, pp 259-265, issn 0022-0248, 7 p.Conference Paper

Morphological instabilities during growth of a rough interface: AFM observations of cobbles on the (0001) face of synthetic quartz crystalsKAWASAKI, M; ONUMA, K; SUNAGAWA, I et al.Journal of crystal growth. 2003, Vol 258, Num 1-2, pp 188-196, issn 0022-0248, 9 p.Article

Process from monodispersion to regular aggregation in Duck Cu, Zn superoxide dismutase crystallization observed by atomic force microscopyGENPEI LI; JIANWEI LI; CHUNLI BAI et al.Journal of crystal growth. 2003, Vol 249, Num 1-2, pp 354-362, issn 0022-0248, 9 p.Article

Piezoresponse force microscopy for piezoelectric measurements of III-nitride materialsRODRIGUEZ, B. J; GRUVERMAN, A; KINGON, A. I et al.Journal of crystal growth. 2002, Vol 246, Num 3-4, pp 252-258, issn 0022-0248, 7 p.Conference Paper

The impact of hydrogen on indium incorporation and surface accumulation in InAlN epitaxySADLER, Thomas C; KAPPERS, Menno J; OLIVER, Rachel A et al.Journal of crystal growth. 2011, Vol 331, Num 1, pp 4-7, issn 0022-0248, 4 p.Article

Crystal growth and morphology of hindered phenol AO-60YUANYI CAO; SHAOLEI WANG; HAIYAN MOU et al.Journal of crystal growth. 2010, Vol 312, Num 10, pp 1747-1750, issn 0022-0248, 4 p.Article

Gallium-assisted deoxidation of patterned substrates for site-controlled growth of InAs quantum dotsATKINSON, P; SCHMIDT, O. G.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1815-1818, issn 0022-0248, 4 p.Conference Paper

Nd:GdVO₄ thin films grown on La₃Ga₅SiO₁₄ (LGS) and sapphire substrates by pulsed laser deposition propertiesHONGXIA LI; JIYANG WANG; XUELIN WANG et al.Journal of crystal growth. 2005, Vol 281, Num 2-4, pp 426-431, issn 0022-0248, 6 p.Article

AFM investigation of step kinetics and hillock morphology of the {100} face of KDPTHOMAS, T. N; LAND, T. A; MARTIN, T et al.Journal of crystal growth. 2004, Vol 260, Num 3-4, pp 566-579, issn 0022-0248, 14 p.Article

Growth of CdWO4 crystals by the low thermal gradient Czochralski technique and the properties of a (010) cleaved surfaceGALASHOV, E. N; ATUCHIN, V. V; KOZHUKHOV, A. S et al.Journal of crystal growth. 2014, Vol 401, pp 156-159, issn 0022-0248, 4 p.Conference Paper

Rim formation on non-elongated InAs quantum dots grown by partial cap and annealing process at low temperatureKUMAGAI, Naoto; OHKOUCHI, Shunsuke; WATANABE, Katsuyuki et al.Journal of crystal growth. 2013, Vol 378, pp 558-561, issn 0022-0248, 4 p.Conference Paper

Variation in Si(1 0 0) surface roughness caused by H-termination during high-temperature Ar annealingARAKI, Koji; ISOGAI, Hiromichi; TAKEDA, Ryuji et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 84-88, issn 0022-0248, 5 p.Conference Paper

Hybrid observation of crystal growth using laser confocal microscope with atomic force microscopeYANAGIYA, Shin-Ichiro; GOTO, Nobuo.Journal of crystal growth. 2010, Vol 312, Num 22, pp 3356-3360, issn 0022-0248, 5 p.Article

A diffusionless transition in a normal alkaneNENE, Shailesh; KARHU, Eric; FLEMMING, Roberta L et al.Journal of crystal growth. 2009, Vol 311, Num 23-24, pp 4770-4777, issn 0022-0248, 8 p.Article

Nucleation and growth of hydroxyapatite nanocrystals for nondestructive repair of early caries lesionsONUMA, Kazuo; YAMAGISHI, Kazue; OYANE, Ayako et al.Journal of crystal growth. 2005, Vol 282, Num 1-2, pp 199-207, issn 0022-0248, 9 p.Article

Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layersCZERNECKI, Robert; KRET, Slawomir; SUSKI, Tadek et al.Journal of crystal growth. 2014, Vol 402, pp 330-336, issn 0022-0248, 7 p.Article

Morphology, growth mode and indium incorporation of MOVPE grown InGaN and AlInGaN: A comparisonAHL, J.-P; HERTKORN, J; KOCH, H et al.Journal of crystal growth. 2014, Vol 398, pp 33-39, issn 0022-0248, 7 p.Article

Stabilities of crystal faces of aragonite-type strontianite (SrCO₃) and cerussite (PbCO₃) compared by AFM observation of facet formation in acidSHIROTA, Yusuke; NIKI, Kaori; SHINDO, Hitoshi et al.Journal of crystal growth. 2011, Vol 324, Num 1, pp 190-195, issn 0022-0248, 6 p.Article

Stabilities of crystal faces of anhydrite (CaS0₄) compared by AFM observation of facet formation processes in aqueous solutionsSHINDO, Hitoshi; IGARASHI, Toshinori; KARINO, Wataru et al.Journal of crystal growth. 2010, Vol 312, Num 4, pp 573-579, issn 0022-0248, 7 p.Article

Atomic force microscopy study on surface morphologies of {110} faces of MnHg(SCN)₄ crystalsGENG, Y. L; XU, D; WANG, Y. L et al.Journal of crystal growth. 2005, Vol 277, Num 1-4, pp 555-559, issn 0022-0248, 5 p.Article

Crystal growth and dissolution processes at the calcite-water interface in the presence of zinc ionsFREIJ, Sawsan J; GODELITSAS, Athanasios; PUTNIS, Andrew et al.Journal of crystal growth. 2005, Vol 273, Num 3-4, pp 535-545, issn 0022-0248, 11 p.Article