An analysis of non-equilibrium peritectic reaction driven by solute diffusion under a temperature gradientDONGMEI LIU; XINZHONG LI; YANQING SU et al.Journal of crystal growth. 2011, Vol 334, Num 1, pp 195-199, issn 0022-0248, 5 p.Article

In-situ observation of isothermal CaSiO₃ crystallization in CaO-Al₂O₃-SiO₂ melts: A study of the effects of temperature and compositionLIU, Jing-Jing; GONG CHEN; YAN, Peng-Cheng et al.Journal of crystal growth. 2014, Vol 402, pp 1-8, issn 0022-0248, 8 p.Article

Phase formation and densification peculiarities of Y3Al5O12:Nd3+ during reactive sinteringYAVETSKIY, R. P; BAUMER, V. N; DOROSHENKO, A. G et al.Journal of crystal growth. 2014, Vol 401, pp 839-843, issn 0022-0248, 5 p.Conference Paper

Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxyJUN WU; BORG, B. Mattias; JACOBSSON, Daniel et al.Journal of crystal growth. 2013, Vol 383, pp 158-165, issn 0022-0248, 8 p.Article

Structure of supersaturated solution and crystal nucleation induced by diffusionOOSHIMA, Hiroshi; IGARASHI, Koichi; IWASA, Hideo et al.Journal of crystal growth. 2013, Vol 373, pp 2-6, issn 0022-0248, 5 p.Conference Paper

A facile method for the synthesis of tapered ZnO:Cu nanorod arrays and its secondary growthJUN HUANG; LIANG HU; HONGHAI ZHANG et al.Journal of crystal growth. 2012, Vol 351, Num 1, pp 93-100, issn 0022-0248, 8 p.Article

SiO gas emission and triple line dynamics of small silicon droplets on quartzWACHSMUTH, Dennis; GEBENSLEBEN, Tim; WEISS, Daniel et al.Journal of crystal growth. 2012, Vol 355, Num 1, pp 122-128, issn 0022-0248, 7 p.Article

Effects of solutal convection on the dissolution of GaSb into InSb melt and solute transport mechanism in InGaSb solution: Numerical simulations and in-situ observation experimentsRAJESH, G; ARIVANANDHAN, M; TAKAGI, Y et al.Journal of crystal growth. 2011, Vol 324, Num 1, pp 157-162, issn 0022-0248, 6 p.Article

Fabrication of ferromagnetic GaMnSb by thermal diffusion of evaporated MnGUANDONG YANG; FENG ZHU; SHAN DONG et al.Journal of crystal growth. 2011, Vol 316, Num 1, pp 145-148, issn 0022-0248, 4 p.Article

Thermal grain-boundary grooving in bicrystal thin solid films having strong anisotropic surface Gibbs free energy represented by the modified cycloid-curtate functionOGURTANI, Tarik Omer.Journal of crystal growth. 2009, Vol 311, Num 6, pp 1584-1593, issn 0022-0248, 10 p.Article

Defect characteristics of ZnO film grown on (0001) sapphire with an ultrathin gallium wetting layerWANG, Y; DU, X. L; MEI, Z. X et al.Journal of crystal growth. 2004, Vol 273, Num 1-2, pp 100-105, issn 0022-0248, 6 p.Article

Dynamics of spontaneous roughening on the GaAs(0 0 1 )-(2 x 4) surfaceDING, Z; BULLOCK, D. W; OLIVER, W. F et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 35-39, issn 0022-0248, 5 p.Conference Paper

Decomposition of crystal-growth equations in multicomponent meltsDUDOROV, M. V.Journal of crystal growth. 2014, Vol 396, pp 45-49, issn 0022-0248, 5 p.Article

Diffusion suppression in vapor-liquid-solid Si nanowire growth by a barrier layer between the Au catalyst and substrateKOTO, Makoto; WATANABE, Masatoshi; SUGAWA, Etsuko et al.Journal of crystal growth. 2014, Vol 404, pp 192-198, issn 0022-0248, 7 p.Article

Structure of initial Ge nanoclusters at the edges of Si(1 1 1) steps with the front in the 〈-1 -1 2〉 directionTEYS, S. A; ROMANYUK, K. N; OLSHANETSKY, B. Z et al.Journal of crystal growth. 2014, Vol 404, pp 39-43, issn 0022-0248, 5 p.Article

Geometric model for metalorganic vapour phase epitaxy of dense nanowire arraysMATTIAS BORG, B; JOHANSSON, Jonas; STORM, Kristian et al.Journal of crystal growth. 2013, Vol 366, pp 15-19, issn 0022-0248, 5 p.Article

Imaging transport phenomena during lysozyme protein crystal growth by the hanging drop techniqueANAMIKA SETHIA GUPTA; GUPTA, Rajive; PANIGRAHI, P. K et al.Journal of crystal growth. 2013, Vol 372, pp 19-33, issn 0022-0248, 15 p.Article

Origin of tensile strain in GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxyAGRAWAL, M; DHARMARASU, N; RADHAKRISHNAN, K et al.Journal of crystal growth. 2013, Vol 378, pp 283-286, issn 0022-0248, 4 p.Conference Paper

Multiwafer zinc diffusion in an OMVPE reactorPITTS, O. J; BENYON, W; GOODCHILD, D et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 249-252, issn 0022-0248, 4 p.Conference Paper

A combined transport-kinetics model for the growth of renal calculiKASSEMI, Mohammad; BROCK, Robert; NEMETH, Noel et al.Journal of crystal growth. 2011, Vol 332, Num 1, pp 48-57, issn 0022-0248, 10 p.Article

Tuning the structural properties of InAs nanocrystals grown by molecular beam epitaxy on silicon dioxideHOCEVAR, Moira; PATRIARCHE, Gilles; SOUIFI, Abdelkader et al.Journal of crystal growth. 2011, Vol 321, Num 1, pp 1-7, issn 0022-0248, 7 p.Article

Growth of homogeneous semiconductor mixed crystals by the traveling liquidus-zone methodKINOSHITA, Kyoichi; YODA, Shinichi.Journal of crystal growth. 2011, Vol 318, Num 1, pp 1026-1029, issn 0022-0248, 4 p.Conference Paper

MOVPE of CuGaSe₂ on GaAs in the presence of a Cu_xSe secondary phaseGÜTAY, Levent; LARSEN, Jes K; GUILLOT, Jerome et al.Journal of crystal growth. 2011, Vol 315, Num 1, pp 82-86, issn 0022-0248, 5 p.Conference Paper

Diffusion of chromium in chrysoberylAHN, Yong-Kil; SEO, Jin-Gyo; PARK, Jong-Wan et al.Journal of crystal growth. 2009, Vol 311, Num 15, pp 3943-3947, issn 0022-0248, 5 p.Article

Deduction of activation energy for diffusion by analyzing soft impingement in non-isothermal solid-state precipitationFAN, K; LIU, F; ZHANG, K et al.Journal of crystal growth. 2009, Vol 311, Num 22, pp 4660-4664, issn 0022-0248, 5 p.Article