kw.\*:("A1. Surface processes")
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The characteristics of heterogeneous nucleation on concave surfaces and implications for directed nucleation or surface activity by surface nanopatterningQIAN, M; MA, J.Journal of crystal growth. 2012, Vol 355, Num 1, pp 73-77, issn 0022-0248, 5 p.Article
Behavior of trench surface by H2 annealing for reliable trench gate oxideKIM, Sang-Gi; TAE MOON ROH; KIM, Jongdae et al.Journal of crystal growth. 2003, Vol 255, Num 1-2, pp 123-129, issn 0022-0248, 7 p.Article
Formation of atomically smooth surfaces on SrTiO3 substrates for epitaxial film growthLIFENG LIU; HUIBIN LU; YIYAN FEI et al.Journal of crystal growth. 2003, Vol 253, Num 1-4, pp 374-377, issn 0022-0248, 4 p.Article
Precise protein solubility determination by Laser confocal differential interference contrast microscopyVAN DRIESSCHE, Alexander E. S; GAVIRA, Jose A; PATINO LOPEZ, Luis D et al.Journal of crystal growth. 2009, Vol 311, Num 13, pp 3479-3484, issn 0022-0248, 6 p.Article
Atomic force microscopy of growth and dissolution of calcium oxalate monohydrate (COM) crystalsGVOZDEV, N. V; PETROVA, E. V; CHERNEVICH, T. G et al.Journal of crystal growth. 2004, Vol 261, Num 4, pp 539-548, issn 0022-0248, 10 p.Article
In situ gravimetric monitoring of surface reactions between sapphire and NH3AKIYAMA, Kazuhiro; ISHII, Yasuhiro; MURAKAMI, Hisashi et al.Journal of crystal growth. 2009, Vol 311, Num 10, pp 3110-3113, issn 0022-0248, 4 p.Conference Paper
Silver nanostructures formation in porous Si/SiO2 matrixSIVAKOV, Vladimir; KANIUKOV, Egor Yu; TOIMIL-MOLARES, Maria Eugenia et al.Journal of crystal growth. 2014, Vol 400, pp 21-26, issn 0022-0248, 6 p.Article
Deposition of nanometric double layers Ru/Au, Ru/Pd, and Pd/Au onto CdZnTe by the electroless methodZHENG, Q; DIERRE, F; CORREGIDOR, V et al.Journal of crystal growth. 2012, Vol 358, pp 89-93, issn 0022-0248, 5 p.Conference Paper
Early stages of nanosecond pulsed-laser growth of silicon pillars in vacuumBELAROUSSI, Y; KERDJA, T; YADDADENE, C et al.Journal of crystal growth. 2011, Vol 337, Num 1, pp 20-23, issn 0022-0248, 4 p.Article
Growth of platelets under diffusion conditions. Growth kinetics of platelets obtained on the zinc single crystals and determination of the timing of their appearance (II)IWANOV, D.Journal of crystal growth. 2003, Vol 253, Num 1-4, pp 524-529, issn 0022-0248, 6 p.Article
Determining crystal growth kinetic parameters using optical fibre sensorsBOERKAMP, M; LAMB, D. W; LYE, P. G et al.Journal of crystal growth. 2012, Vol 361, pp 132-134, issn 0022-0248, 3 p.Article
Wet chemical cleaning process of GaAs substrate for ready-to-useSONG, J. S; CHOI, Y. C; SEO, S. H et al.Journal of crystal growth. 2004, Vol 264, Num 1-3, pp 98-103, issn 0022-0248, 6 p.Article
Hydrogen etching on the surface of GaN for producing patterned structuresYEH, Yen-Hsien; CHEN, Kuei-Ming; WU, Yin-Hao et al.Journal of crystal growth. 2011, Vol 314, Num 1, pp 9-12, issn 0022-0248, 4 p.Article
Computer simulations of the adsorption of citric acid at hydroxyapatite surfacesFILGUEIRAS, M. R. T; MKHONTO, D; DE LEEUW, N. H et al.Journal of crystal growth. 2006, Vol 294, Num 1, pp 60-68, issn 0022-0248, 9 p.Conference Paper
Silicon epitaxial growth process using trichlorosilane gas in a single-wafer high-speed substrate rotation reactorHABUKA, Hitoshi; SUZUKI, Junpei; TAKAI, Yusuke et al.Journal of crystal growth. 2011, Vol 327, Num 1, pp 1-5, issn 0022-0248, 5 p.Article
Gallium-assisted deoxidation of patterned substrates for site-controlled growth of InAs quantum dotsATKINSON, P; SCHMIDT, O. G.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1815-1818, issn 0022-0248, 4 p.Conference Paper
Dislocation-free large area InP ELO layers by liquid phase epitaxyKOCHIYA, Toshio; OYAMA, Yutaka; KIMURA, Toshihiro et al.Journal of crystal growth. 2005, Vol 281, Num 2-4, pp 263-274, issn 0022-0248, 12 p.Article
Hydrogen etching of GaN and its application to produce free-standing GaN thick filmsYEH, Yen-Hsien; CHEN, Kuei-Ming; WU, Yin-Hao et al.Journal of crystal growth. 2011, Vol 333, Num 1, pp 16-19, issn 0022-0248, 4 p.Article
Etching enhanced annealing of GaMnAs layersOLEJNIK, K; NOVAK, V; CUKR, M et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 2151-2154, issn 0022-0248, 4 p.Conference Paper
Mechanism of stabilization of zincblende GaN on hexagonal substrates : Insight gained from growth on ZrB2 (0001)ARMITAGE, R; NISHIZONO, K; SUDA, J et al.Journal of crystal growth. 2005, Vol 284, Num 3-4, pp 369-378, issn 0022-0248, 10 p.Article
Effect of excimer laser irradiation on polycrystalline GaNPARKA, Seong-Eun; KIM, Dae-Jin; WON SEOK HAN et al.Journal of crystal growth. 2003, Vol 253, Num 1-4, pp 208-211, issn 0022-0248, 4 p.Article
Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H2 and N2KUMAGAI, Yoshinao; IGI, Takahiro; ISHIZUKI, Masanari et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 60-65, issn 0022-0248, 6 p.Conference Paper
Hybrid observation of crystal growth using laser confocal microscope with atomic force microscopeYANAGIYA, Shin-Ichiro; GOTO, Nobuo.Journal of crystal growth. 2010, Vol 312, Num 22, pp 3356-3360, issn 0022-0248, 5 p.Article
Change in the branch period of the step pattern formed by a moving linear source—initial coarsening and effect of an abrupt change in the velocityKONDO, Shinji; KAWAGUCHI, Masashi; SATO, Masahide et al.Journal of crystal growth. 2013, Vol 362, pp 6-12, issn 0022-0248, 7 p.Conference Paper
Influence of some foreign metal ions on crystal growth kinetics of brushite (CaHPO4 · 2H2O)ROSA, Silvia; LUNDAGER MADSEN, Hans E.Journal of crystal growth. 2010, Vol 312, Num 20, pp 2983-2988, issn 0022-0248, 6 p.Article