Thermal imaging of wafer temperature in MBE using a digital cameraJACKSON, A. W; GOSSARD, A. C.Journal of crystal growth. 2007, Vol 301-302, pp 105-108, issn 0022-0248, 4 p.Conference Paper

Three decades of molecular beam epitaxyFOXON, C. T.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 1-8, issn 0022-0248, 8 p.Conference Paper

Formation of compressively strained Si/Si_1―xC_x/Si(100) heterostructures using gas-source molecular beam epitaxyARIMOTO, Keisuke; FURUKAWA, Hiroshi; YAMANAKA, Junji et al.Journal of crystal growth. 2013, Vol 362, pp 276-281, issn 0022-0248, 6 p.Conference Paper

Controlled growth of exciton-polariton microcavities using in situ spectral reflectivity measurementsBIERMANN, K; CERDA-MENDEZ, E. A; HÖRICKE, M et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 56-59, issn 0022-0248, 4 p.Conference Paper

Optimizing dopant activation in Si:P double δ-layersMCKIBBIN, Sarah R; CLARKE, Warrick R; FUHRER, Andreas et al.Journal of crystal growth. 2010, Vol 312, Num 21, pp 3247-3250, issn 0022-0248, 4 p.Article

Transition of 3D to 2D growth modes of InAs grown on GaAsMIAO, Z. L; CHUA, S. J; ZHANG, Y. W et al.Applied surface science. 2006, Vol 252, Num 10, pp 3436-3440, issn 0169-4332, 5 p.Article

Various phase-field approximations for Epitaxial GrowthRÄTZ, Andreas; VOIGT, Axel.Journal of crystal growth. 2004, Vol 266, Num 1-3, pp 278-282, issn 0022-0248, 5 p.Conference Paper

Strain compensated Si/Si_0.2Ge_0.2quantum cascade structures grown by low temperature molecular beam epitaxyGRÜTZMACHER, D; MENTESE, S; BAUER, G et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 707-717, issn 0022-0248, 11 p.Conference Paper

Homobuffer thickness effect on the conduction type of non-polar ZnO thin filmsPAN, X. H; DING, P; HUANG, J. Y et al.Journal of crystal growth. 2014, Vol 404, pp 80-83, issn 0022-0248, 4 p.Article

Local control of strain in SiGe by ion-implantation techniqueSAWANO, K; HOSHI, Y; HIRAOKA, Y et al.Journal of crystal growth. 2009, Vol 311, Num 3, pp 806-808, issn 0022-0248, 3 p.Conference Paper

Free-standing zinc-blende (cubic) GaN layers and substratesNOVIKOV, S. V; STANTON, N. M; CAMPION, R. P et al.Journal of crystal growth. 2008, Vol 310, Num 17, pp 3964-3967, issn 0022-0248, 4 p.Conference Paper

Spontaneously grown GaN and AlGaN nanowiresBERTNESS, K. A; ROSHKO, A; SANFORD, N. A et al.Journal of crystal growth. 2006, Vol 287, Num 2, pp 522-527, issn 0022-0248, 6 p.Conference Paper

Morphological stability of films deposited on an SOI substrateJIANG, H. Y; HE, L. H.Journal of crystal growth. 2004, Vol 262, Num 1-4, pp 28-34, issn 0022-0248, 7 p.Article

Performance of gas source MBE grown InAlGaAs photovoltaic detectors tailored to 1.4 μmZHOU, L; GU, Y; ZHANG, Y. G et al.Journal of crystal growth. 2013, Vol 378, pp 579-582, issn 0022-0248, 4 p.Conference Paper

Thermal-activated carrier transfer in ZnCdO thin film grown by plasma-assisted molecular beam epitaxyCHIEN, K. F; HSU, W. L; TZOU, A. J et al.Journal of crystal growth. 2013, Vol 378, pp 208-211, issn 0022-0248, 4 p.Conference Paper

Degenerated MgZnO films obtained by excessive zincLIU, J. S; SHAN, C. X; WANG, S. P et al.Journal of crystal growth. 2012, Vol 347, Num 1, pp 95-98, issn 0022-0248, 4 p.Article

GaP/GaAs_1-xP_x nanowires fabricated with modulated fluxes: A step towards the realization of superlattices in a single nanowireJABEEN, F; PATRIARCHE, G; GLAS, F et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 293-296, issn 0022-0248, 4 p.Conference Paper

Improvement of GaInNAsSb films fabricated by atomic hydrogen-assisted molecular beam epitaxyMIYASHITA, Naoya; ICHIKAWA, Shuhei; OKADA, Yoshitaka et al.Journal of crystal growth. 2009, Vol 311, Num 12, pp 3249-3251, issn 0022-0248, 3 p.Article

MBE growth and patterned backgating of electron-hole bilayer structuresFARRER, I; CROXALL, A. F; DAS GUPTA, K et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1988-1993, issn 0022-0248, 6 p.Conference Paper

Thin film growth of (Cu, C)Ba₂Ca_(n-1)Cu_nO_y, (n = 1-4) superconductor by molecular beam epitaxySHIBATA, H; KARIMOTO, S; TSUKADA, A et al.Journal of crystal growth. 2007, Vol 301-302, pp 684-686, issn 0022-0248, 3 p.Conference Paper

Growth control of epitaxial GeTe-Sb₂Te₃ films using a line-of-sight quadrupole mass spectrometerPERUMAL, Karthick; BRAUN, Wolfgang; RIECHERT, Henning et al.Journal of crystal growth. 2014, Vol 396, pp 50-53, issn 0022-0248, 4 p.Article

The influence of growth temperature on Sb incorporation in InAsSb, and the temperature-dependent impact of Bi surfactantsSARNEY, W. L; SVENSSON, S. P; ANDERSON, E. M et al.Journal of crystal growth. 2014, Vol 406, pp 8-11, issn 0022-0248, 4 p.Article

Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% SnOEHME, M; BUCA, D; KOSTECKI, K et al.Journal of crystal growth. 2013, Vol 384, pp 71-76, issn 0022-0248, 6 p.Article

Molecular beam epitaxy growth of InSb_1―xBi_x thin filmsYUXIN SONG; SHUMIN WANG; IVY SAHA ROY et al.Journal of crystal growth. 2013, Vol 378, pp 323-328, issn 0022-0248, 6 p.Conference Paper

Quantitative estimation of density of Bi-induced localized states in GaAs_1―xBi_x grown by molecular beam epitaxyYOSHIMOTO, Masahiro; ITOH, Mizuki; TOMINAGA, Yoriko et al.Journal of crystal growth. 2013, Vol 378, pp 73-76, issn 0022-0248, 4 p.Conference Paper