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Understanding the inductively coupled argon plasma-enhanced quantum well intermixingTING MEI; DJIE, H. S; AROKIARAJ, J et al.Journal of crystal growth. 2004, Vol 268, Num 3-4, pp 384-388, issn 0022-0248, 5 p.Conference Paper

Controlled growth of exciton-polariton microcavities using in situ spectral reflectivity measurementsBIERMANN, K; CERDA-MENDEZ, E. A; HÖRICKE, M et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 56-59, issn 0022-0248, 4 p.Conference Paper

Progress and prospects of advanced quantum nanostructures and roles of molecular beam epitaxySAKAKI, Hiroyuki.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 9-16, issn 0022-0248, 8 p.Conference Paper

Synthesis and spectral properties of starch capped CdS nanoparticles in aqueous solutionRODRIGUEZ, P; MUNOZ-AGUIRRE, N; SAN-MARTIN MARTINEZ, E et al.Journal of crystal growth. 2008, Vol 310, Num 1, pp 160-164, issn 0022-0248, 5 p.Article

High-power, narrow-ridge, mid-infrared interband cascade lasersCANEDY, C. L; KIM, C. S; KIM, M et al.Journal of crystal growth. 2007, Vol 301-302, pp 931-934, issn 0022-0248, 4 p.Conference Paper

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Triggered luminescence in a strained Si_1-xGe_x/Si single quantum well with surface as an electron reservoirYASUHARA, N; FUKATSU, S.Journal of crystal growth. 2005, Vol 278, Num 1-4, pp 512-515, issn 0022-0248, 4 p.Conference Paper

Thermodynamics and kinetics of indium segregation in InGaAs/GaAs heterostructures grown by MOCVDSOZYKIN, A. S; STRELCHENKO, S. S; PROKOLKIN, E. V et al.Journal of crystal growth. 2013, Vol 363, pp 253-257, issn 0022-0248, 5 p.Article

Characterization of an AlGaAs/GaAs quantum well prepared on objects of pyramidal shapeSOLTYS, J; KUDELA, R; KUCERA, M et al.Journal of crystal growth. 2011, Vol 316, Num 1, pp 67-70, issn 0022-0248, 4 p.Article

Effects of AlGaAsSb electron supply layer for InGaAs/InAlAs metamorphic HEMTs on GaAs substrateGEKA, Hirotaka; YAMADA, Satoshi; TOITA, Masato et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 522-524, issn 0022-0248, 3 p.Conference Paper

MBE grown GaInNAs-based multi-Watt disk lasersKORPIJÄRVI, V.-M; GUINA, M; PUUSTINEN, J et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1868-1871, issn 0022-0248, 4 p.Conference Paper

Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1-2.4 μm rangeGU, Y; ZHANG, Y. G; WANG, K et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1935-1938, issn 0022-0248, 4 p.Conference Paper

Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 μm grown by molecular beam epitaxyNI, H. Q; NIU, Z. C; FANG, Z. D et al.Journal of crystal growth. 2007, Vol 301-302, pp 125-128, issn 0022-0248, 4 p.Conference Paper

1070 nm and 1118 nm high power lasers grown with partial strain balancingROBERTS, J. S; CULLIS, A. G; SARMA, J et al.Journal of crystal growth. 2003, Vol 248, pp 348-353, issn 0022-0248, 6 p.Conference Paper

Growth and characterization of mid-infrared microdisk lasers operating in continuous-wave mode up to 2 °CEIBELHUBER, M; SCHWARZL, T; PICHLER, S et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 460-462, issn 0022-0248, 3 p.Conference Paper

Optical properties of GaInNAs quantum wells on misoriented substrates grown by MOVPEISHIZUKA, Takashi; DOI, Hideyuki; KATSUYAMA, Tsukuru et al.Journal of crystal growth. 2007, Vol 298, pp 116-120, issn 0022-0248, 5 p.Conference Paper

Optical properties of InGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxyJIANG, De-Sheng; QU, Yu-Hua; NI, Hai-Qiao et al.Journal of crystal growth. 2006, Vol 288, Num 1, pp 12-17, issn 0022-0248, 6 p.Conference Paper

Photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxyMOZUME, T; KASAI, J; NAGASE, M et al.Journal of crystal growth. 2007, Vol 301-302, pp 177-180, issn 0022-0248, 4 p.Conference Paper

Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wellsBIAN, L. F; JIANG, D. S; LU, S. L et al.Journal of crystal growth. 2003, Vol 253, Num 1-4, pp 155-160, issn 0022-0248, 6 p.Article

Characterization of MOVPE-grown GaInNaS quantum well with multi-barriers by Z-contrast imaging and SIMSKIM, K. S; KIM, T; PARK, Y. J et al.Journal of crystal growth. 2006, Vol 287, Num 2, pp 620-624, issn 0022-0248, 5 p.Conference Paper

Highly efficient InGaAs QW vertical external cavity surface emitting lasers emitting at 1060nmKIM, K. S; YOO, J. R; LEE, S. M et al.Journal of crystal growth. 2006, Vol 287, Num 2, pp 629-632, issn 0022-0248, 4 p.Conference Paper

Influence of the barrier composition in GaN/In_xAl_1―xN quantum wells propertiesKRIOUCHE, N; WATANABE, A; ODA, O et al.Journal of crystal growth. 2014, Vol 390, pp 51-55, issn 0022-0248, 5 p.Article

Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substratesREUTERS, B; STRATE, J; HAHN, H et al.Journal of crystal growth. 2014, Vol 391, pp 33-40, issn 0022-0248, 8 p.Article