EFFECT OF CHARGING ENERGY ON SUPERCONDUCTIVITY IN GRANULAR METAL FILMS.ABELES B.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 15; NO 5; PP. 2828-2829; BIBL. 18 REF.Article

COMPOSITE MATERIAL FILMS: OPTICAL PROPERTIES AND APPLICATIONS.ABELES B; GITTLEMAN JI.1976; APPL. OPT.; U.S.A.; DA. 1976; VOL. 15; NO 10; PP. 2328-2332; BIBL. 25 REF.Article

Amorphous semiconductor superlatticesABELES, B.Superlattices and microstructures. 1989, Vol 5, Num 4, pp 473-480, issn 0749-6036, 8 p.Article

OXIDATION STUDIES OF HYDROGENATED AMORPHOUS SILICONKELEMEN SR; GOLDSTEIN Y; ABELES B et al.1982; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1982; VOL. 116; NO 3; PP. 488-500; BIBL. 22 REF.Article

GRANULAR METAL-SEMICONDUCTOR VIDICON.WRONSKI CR; ABELES B; ROSE A et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 2; PP. 91-92; BIBL. 7 REF.Article

CAPTURE CROSS-SECTION AND DENSITY OF DEEP GAP STATES IN A-SIH_X SCHOTTKY BARRIER STRUCTURESABELES B; WRONSKI CR; GOLDSTEIN Y et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 41; NO 3; PP. 251-253; BIBL. 15 REF.Article

ELECTRON TRANSPORT IN HYDROGENATED AMORPHOUS SILICON: DRIFT MOBILITY AND JUNCTION CAPACITANCETIEDJE T; WRONSKI CR; ABELES B et al.1980; SOL. CELLS; CHE; DA. 1980; VOL. 2; NO 3; PP. 301-318; BIBL. 19 REF.Article

OPTICAL CHARACTERIZATION OF AMORPHOUS SILICON HYBRIDE FILMSCODY GD; WRONSKI CR; ABELES B et al.1980; SOL. CELLS; CHE; DA. 1980; VOL. 2; NO 3; PP. 227-243; BIBL. 17 REF.Article

STRUCTURAL AND ELECTRICAL PROPERTIES OF GRANULAR METAL FILMS.ABELES B; PING SHENG; COUTTS MD et al.1975; ADV. IM PHYS.; G.B.; DA. 1975; VOL. 24; NO 3; PP. 407-461; BIBL. 1 P. 1/2Article

GRANULAR METAL-SEMICONDUCTOR SCHOTTKY BARRIERS.WRONSKI CR; ABELES B; DANIEL RE et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 1; PP. 295-299; BIBL. 12 REF.Article

Quantum shift of the optical absorption edge in ultrathin amorphous hydrogenated germaniumYANG, L; ABELES, B.Applied physics letters. 1987, Vol 51, Num 4, pp 264-266, issn 0003-6951Article

RECOMBINATION CENTERS IN PHOSPHOROUS DOPED HYDROGENATED AMORPHOUS SILICONWRONSKI CR; ABELES B; TIEDJE T et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 44; NO 10; PP. 1423-1426; BIBL. 28 REF.Article

EXPONENTIAL ABSORPTION EDGE IN HYDROGENATED A-SI FILMSABELES B; WRONSKI CR; TIEDJE T et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 36; NO 6; PP. 537-540; BIBL. 16 REF.Article

OPTICAL PROPERTIES AND SELECTIVE SOLAR ABSORPTION OF COMPOSITE MATERIAL FILMS.GITTLEMAN JI; ABELES B; ZANZUCCHI P et al.1977; THIN SOLID FILMS; NETHERL.; DA. 1977; VOL. 45; NO 1; PP. 9-18; BIBL. 26 REF.Article

Amorphous semiconductor superlatticesABELES, B; TIEDJE, T.Physical review letters. 1983, Vol 51, Num 21, pp 2003-2006, issn 0031-9007Article

ELECTRON DRIFT MOBILITY IN HYDROGENATED A-SITIEDJE T; ABELES B; MOREL DL et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 8; PP. 695-697; BIBL. 11 REF.Article

STRUCTURAL AND ELECTRICAL PROPERTIES OF GRANULAR METAL FILMSABELES B; PING SHENG; COUTTS MD et al.1975; ADV. IN PHYS.; G.B.; DA. 1975; VOL. 24; NO 3; PP. 407-461; BIBL. 1 P. 1/2Article

Electrical transport in amorphous hydrogenated Ge/Si superlatticesWRONSKI, C. R; PERSANS, P. D; ABELES, B et al.Applied physics letters. 1986, Vol 49, Num 10, pp 569-571, issn 0003-6951Article

Transport in solid oxide porous electrodes : effect of gas diffusionHUIMING DENG; MINYAU ZHOU; ABELES, B et al.Solid state ionics. 1995, Vol 80, Num 3-4, pp 213-222, issn 0167-2738Article

Molecular confinement in nanometer-size superlattice microstructuresROXLO, C. B; DECKMAN, H. W; ABELES, B et al.Physical review letters. 1986, Vol 57, Num 19, pp 2462-2465, issn 0031-9007Article

Molecular confinement in nanometer-size superlattice microstructuresROXLO, C. B; DECKMAN, H. W; ABELES, B et al.Physical review letters. 1986, Vol 57, Num 19, pp 2462-2465, issn 0031-9007Article

Urbach edge and the density of states in hydrogenated amorphous siliconTIEDJE, T; ABELES, B; CEBULKA, J. M et al.Solid state communications. 1983, Vol 47, Num 6, pp 493-496, issn 0038-1098Article

Transport in mixed ionic electronic conductor solid oxide membranes with porous electrodes : Large pressure gradientZHOU, M; DENG, H; ABELES, B et al.Solid state ionics. 1996, Vol 93, Num 1-2, pp 133-138, issn 0167-2738Article

Photoemission spectroscopy of heterojunctions of amorphous hydrogenated silicon with silicon oxide and nitrideYANG, L; ABELES, B; EBERHARDT, W et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 12, pp 2798-2802, issn 0018-9383Article

Structure of interfaces in amorphous silicon/silicon nitride superlattices determined by in situ optical reflectanceYANG, L; ABELES, B; PERSANS, P. D et al.Applied physics letters. 1986, Vol 49, Num 11, pp 631-633, issn 0003-6951Article