PHOTOIONIZATION OF GROUP-III ACCEPTORS IN SILICON.EDWARDS AH; FOWLER WB.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 16; NO 8; PP. 3613-3617; BIBL. 20 REF.Article

A NEW ACCEPTOR LEVEL IN INDIUM-DOPED SILICON.BARON R; YOUNG MH; NEELAND JK et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 11; PP. 594-596; BIBL. 18 REF.Article

THE DEGENERACY FACTOR OF THE GOLD ACCEPTOR LEVEL IN SILICON.RALPH HI.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 2; PP. 672-675; BIBL. 14 REF.Article

DOUBLE ACCEPTOR BOUND EXCITON IN GENAKATA H; YODO T; OTSUKA E et al.1983; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1983; VOL. 45; NO 2; PP. 55-57; BIBL. 18 REF.Article

ON THE SELF-COMPENSATION OF DONORS IN LIQUID PHASE EPITAXIAL GAASPODOR B.1980; ACTA PHYS. ACAD. SCI. HUNG.; ISSN 0001-6705; HUN; DA. 1980; VOL. 48; NO 2-3; PP. 147-152; BIBL. 21 REF.Article

STIMULATED COMPLEX FORMATIONKOTINA IM; KURYATKOV VV; NOVIKOV SR et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 60; NO 2; PP. 493-500; ABS. RUS; BIBL. 14 REF.Article

BAND STRUCTURE MODEL AND ELECTROSTATIC EFFECTS IN THIRD AND FOURTH STAGES OF GRAPHITE ACCEPTOR COMPOUNDSBLINOWSKI J; RIGAUX C.1980; J. PHYS.; ISSN 0302-0738; FRA; DA. 1980; VOL. 41; NO 7; PP. 667-676; ABS. FRE; BIBL. 15 REF.Article

PHOTOLUMINESCENCE OF THERMALLY TREATED N-TYPE SI-DOPED GAASLUM WY; WIEDER HH.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 12; PP. 6187-6188; BIBL. 13 REF.Article

FILAMENT INJECTE DANS UN SEMICONDUCTEUR A PIEGES PROFONDSGRIBNIKOV ZS.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 2; PP. 319-324; BIBL. 6 REF.Article

GRAPHIC REPRESENTATION OF THE GROUND STATE WAVE-FUNCTIONS OF THE SHALLOW ACCEPTOR IN GERMINIUMCHROBOCZEK JA; MCINNES JA.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 1; PP. L17-L20; BIBL. 2 REF.Article

COEFFICIENT DE VARIATION THERMIQUE NEGATIF DE LA CONCENTRATION A L'EQUILIBRE DES PORTEURS DE CHARGE POUR L'AUTOCOMPENSATION DANS SIC-BETAAJVAZOVA LS; VINETSKIJ VL; KHOLODAR GA et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 12; PP. 2100-2104; BIBL. 7 REF.Article

REGLES DE SELECTION DE LA LUMINESCENCE CHAUDE DANS LES TRANSITIONS BANDE DE CONDUCTION-ACCEPTEURPOLYAKOV DG.1982; FIZIKA TVERDOGO TELA; ISSN 0367-3294; SUN; DA. 1982; VOL. 24; NO 12; PP. 3542-3549; BIBL. 14 REF.Article

PROCESSUS DU TRANSPORT ELECTRONIQUE A LA SURFACE DE SIO₂MIRONOV SL.1980; Z. FIZ. HIM.; ISSN 0044-4537; SUN; DA. 1980; VOL. 54; NO 5; PP. 1283-1284; BIBL. 4 REF.Article

NATURE OF THE 0. 111 EV ACCEPTOR LEVEL IN INDIUM-DOPED SILICONBARON R; BAUKUS JP; ALLEN SD et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 4; PP. 257-259; BIBL. 18 REF.Article

UTILISATION DE L'OXYDE D'AZOTE COMME SONDE PARAMAGNETIQUE DANS L'ETUDE DE LA SURFACE DE GAMMA -AL₂O₃SELIVANOVSKIJ AK; LUNINA EV; GOLUBEV VB et al.1979; Z. FIZ. KHIM.; ISSN 0044-4537; SUN; DA. 1979; VOL. 53; NO 8; PP. 2079-2082; BIBL. 8 REF.Article

HYDROGEN PASSIVATION OF GOLD-RELATED DEEP LEVELS IN SILICONPEARTON SJ; TAVENDALE AJ.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 12; PP. 7105-7108; BIBL. 19 REF.Article

THE RECHARGE-ENHANCED TRANSFORMATIONS OF DONOR-ACCEPTOR PAIRS AND CLUSTERS IN CDSSHEINKMAN MK; KORSUNSKAYA NE; MARKEVICH IV et al.1982; JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS; ISSN 0022-3697; USA; DA. 1982; VOL. 43; NO 5; PP. 475-479; BIBL. 23 REF.Article

INFLUENCE D'UN ECLAIREMENT SUR LE POTENTIEL D'IMPURETE DES CRISTAUX COMPENSES DE INPNDAKHNO AN; EMEL'YANENKO OV; LAGUNOVA TS et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 5; PP. 810-814; BIBL. 4 REF.Article

ISOELECTRONIC BOUND EXCITONS IN SILICON: THE ROLE OF DEEP ACCEPTORSTHEWALT MLW; ZIEMELIS UO; PARSONS RR et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 6; PP. 3655-3658; BIBL. 10 REF.Article

ELECTRICAL PROPERTIES OF DISLOCATIONS IN ULTRAPURE GERMANIUMHUBBARD GS; HALLER EE.1980; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1980; VOL. 9; NO 1; PP. 51-66; BIBL. 23 REF.Article

INFRARED SPECTRA OF NEW ACCEPTOR LEVELS IN BORON-DOPED AND GALLIUM-DOPED SILICONSCOTT W; JONES CE.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 7258-7260; BIBL. 14 REF.Article

ETUDE DU PROCESSUS D'AVALANCHE DANS UNE STRUCTURE METAL-DIELECTRIQUE-SEMICONDUCTEURPLOTNIKOV AF; SHUBIN V EH; KRAVCHENKO AB et al.1979; MIKROELEKTRONIKA; SUN; DA. 1979; VOL. 8; NO 1; PP. 49-55; BIBL. 10 REF.Article

INFLUENCE DU SOUFRE SUR LES PROPRIETES ELECTRIQUES DU DIOXYDE DE CERIUMSUNTSOV NV; MILOSLAVSKIJ AG.1979; DOKL. AKAD. NAUK UKR. S.S.R., A; UKR; DA. 1979; NO 3; PP. 234-236; ABS. ENG; BIBL. 5 REF.Article

UNDULATION SPECTRA IN GASE⁰,9)TE⁰,1) ASSOCIATED WITH ACCEPTOR COMPLEXESMENESES EA.1978; J. PHYS. C; GBR; DA. 1978; VOL. 11; NO 15; PP. L679-L680Article

FINE STRUCTURE IN THE BOUND EXCITON AND MULTIPLE BOUND EXCITON LUMINESCENCE FROM ALUMINIUM-DOPED SILICON.LIGHTOWLERS EC; HENRY MO.1977; J. PHYS. C; G.B.; DA. 1977; VOL. 10; NO 9; PP. L247-L250; BIBL. 16 REF.Article