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REFRACTIVE INDICES OF III-V COMPOUNDS: KEY PROPERTIES OF INGAASP RELEVANT TO DEVICE DESIGNADACHI S.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 8; PP. 5863-5869; BIBL. 27 REF.Article

CHEMICAL ETCHING OF INP AND INGAASP/INPADACHI S.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 3; PP. 609-613; BIBL. 14 REF.Article

Dispersion of the linear electro-optic coefficients in GaAsADACHI, S.Journal of applied physics. 1992, Vol 72, Num 8, pp 3702-3704, issn 0021-8979Article

EFFECT OF 1-M-TOLUENEAZO-2-NAPHTHOL ON HEPATIC DRUG METABOLISM. II: INDUCTION OF UDP-GLUCURONYLTRANSFERASEADACHI S; UESUGI T.1982; J. PHARMACOBIO-DYN.; ISSN 0386-846X; JPN; DA. 1982; VOL. 5; NO 4; PP. 273-277; BIBL. 11 REF.Article

ETUDE DES ROCHES PALEOZOIQUES DANS LE DISTRICT FUKUJI, VILLAGE KAMITAKARA, PROVINCE YOSHIKI, PREFECTURE GIFU: ETAT ACTUEL ET PROBLEMES NON RESOLUSIGO H; ADACHI S.1981; CHIGAKU ZASSHI; ISSN 502839; JPN; DA. 1981; VOL. 90; NO 5; PP. 336-345; ABS. ENG; BIBL. 3 P.; ILL.Article

RESONANT BRILLOUIN SCATTERING IN ZNXCD1-XTEADACHI S; HAMAGUCHI C.1978; TECHNOL. REP. OSAKA UNIV.; JPN; DA. 1978; VOL. 28; NO 1394-1429; PP. 141-148; BIBL. 16 REF.Article

RECIPROCITY FOR ION WAVES IN PLASMAS.OHNUMA T; ADACHI S.1976; PROC. I.E.E.E.; U.S.A.; DA. 1976; VOL. 64; NO 12; PP. 1733-1734; BIBL. 4 REF.Article

CONCEPTION DES CAMIONS CITERNESADACHI S; SHIMIZU Y.1972; J. FUEL SOC. JAP.; JAP.; DA. 1972; VOL. 51; NO 11; PP. 1147-1154; ABS. ANGLSerial Issue

Excitonic effects in the optical spectrum of InPADACHI, S.Japanese journal of applied physics. 1989, Vol 28, Num 9, pp 1536-1543, issn 0021-4922, 1Article

Model dielectric constants of GaP, GaAs, GaSb, InP, InAs, and InSbADACHI, S.Physical review. B, Condensed matter. 1987, Vol 35, Num 14, pp 7454-7463, issn 0163-1829Article

Smaller foraminifers of the Ichinotani formation (Carboniferous-Permian), Hida Massif, Central Japan = Les petits foraminifères de la Formation Ichinotani (Carbonifère-Permien) du massif d'Hida, Japon CentralADACHI, S.1985, Vol 6, pp 59-139, issn 0388-6182Article

GaAs,AlAs, and AlxGa1-xAs: material parameters for use in research and device applicationsADACHI, S.Journal of applied physics. 1985, Vol 58, Num 3, pp R1-R29, issn 0021-8979Article

RADIATION AND RECEPTION CHARACTERISTICS OF AN OBLATE SPHEROIDAL ANTENNA FOR ELECTRON PLASMA WAVES. I: THEORYOHNUKI S; ADACHI S.1981; RADIO SCI.; ISSN 0048-6604; USA; DA. 1981; VOL. 16; NO 4; PP. 569-578; BIBL. 15 REF.Article

RESONANT BRILLOUIN SCATTERING IN GAP NEAR THE INDIRECT ABSORPTION EDGEADACHI S; HAMAGUCHI C.1979; PHYSICA B+C; NLD; DA. 1979; VOL. 97; NO 2-3; PP. 187-193; BIBL. 23 REF.Article

HYDROLYSIS OF LACTOSE BY MICROBIAL BETA -GALACTOSIDASES. FORMATION OF OLIGOSACCHARIDES WITH REFERENCE TO 2-O-GALACTOPYRANOSYL-D-GLUCOSE.TOBA T; ADACHI S.1978; J. DAIRY SCI.; U.S.A.; DA. 1978; VOL. 61; NO 1; PP. 33-38; BIBL. 24 REF.Article

Simulated moving-bed chromatography for continuous separation of two components and its application to bioreactors : Preparative chromatographyADACHI, S.Journal of chromatography. 1994, Vol 658, Num 2, pp 271-282, issn 0021-9673Article

Chemical etching of (100)GaAs in volcanic mineral waterADACHI, S.Journal of the Electrochemical Society. 1991, Vol 138, Num 12, pp 3714-3716, issn 0013-4651Article

Chemical etching characteristics of (100)GaAs in Kusatsu Spa waterADACHI, S.Japanese journal of applied physics. 1991, Vol 30, Num 6, pp 1196-1197, issn 0021-4922, 1Article

Excitonic effects in the optical spectrum of GaAsADACHI, S.Physical review. B, Condensed matter. 1990, Vol 41, Num 2, pp 1003-1013, issn 0163-1829Article

A numerical evaluation of the semiclassical coherent state path integralADACHI, S.Annals of physics (Print). 1989, Vol 195, Num 1, pp 45-93, issn 0003-4916, 49 p.Article

Ostracodes from the Ichinotani Formation (Carboniferous and Permian), Fukuji, Hida Massif, Central JapanADACHI, S.Congrès international de stratigraphie et de géologie du Carbonifère. 1989, pp 1-5Conference Paper

Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: key properties for a variety of the 2-4-μm optoelectronic device applicationsADACHI, S.Journal of applied physics. 1987, Vol 61, Num 10, pp 4869-4876, issn 0021-8979Article

Be+/O+-ion implantation in GaAs-AlGaAs heterojunctionsADACHI, S.Journal of applied physics. 1986, Vol 60, Num 3, pp 959-964, issn 0021-8979Article

IMPEDANCE OF A SPHERICAL PROBE IMMERSED IN A WARM MAGNETIZED PLASMAFUJITA T; ADACHI S.1981; RADIO SCI.; ISSN 0048-6604; USA; DA. 1981; VOL. 16; NO 3; PP. 399-408; BIBL. 11 REF.Article

INGAASP-INP PLANAR-STRIPE LASERS FABRICATED BY WET CHEMICAL ETCHINGADACHI S; KAWAGUCHI H.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 5; PP. 3176-3178; BIBL. 7 REF.Article

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