au.\*:("ADAMS AC")
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CHARACTERIZATION OF FILMS FORMED BY PYROLYSIS OF BORAZINEADAMS AC.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 6; PP. 1378-1379; BIBL. 7 REF.Article
THE CHEMICAL DEPOSITION OF BORON-NITROGEN FILMSADAMS AC; CAPIO CD.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 2; PP. 399-405; BIBL. 19 REF.Article
THE DEPOSITION OF SILICON DIOXIDE FILMS AT REDUCED PRESSUREADAMS AC; CAPIO CD.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 4; PP. 1042-1046; BIBL. 18 REF.Article
PLASMA ETCHING OF SI AND SIO2 - THE EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMASMOGAB CJ; ADAMS AC; FLAMM DL et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 7; PP. 3796-3803; BIBL. 19 REF.Article
TAPERED WINDOWS IN PHOSPHORUS-DOPED SIO2 BY ION IMPLANTATIONNORTH JC; MCGAHAN TE; RICE DW et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 7; PP. 809-812; BIBL. 11 REF.Article
ENHANCED TOXICITY FOR MICE OF COMBINATIONS OF BACTERIAL LIPOPOLYSACCHARIDE AND VINCRISTINEMUNSON AE; DRUMMOND DC; ADAMS AC et al.1976; ANTIMICROB. AGENTS CHEMOTHERAPY; U.S.A.; DA. 1976; VOL. 9; NO 5; PP. 840-847; BIBL. 29 REF.Article
CHEMICALLY VAPOR DEPOSITED TUNGSTEN FOR SEMICONDUCTOR METALLIZATIONSMELLIAR SMITH CM; ADAMS AC; KAISER RH et al.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 2; PP. 298-303; BIBL. 9 REF.Article
THE HIGH TEMPERATURE DEPOSITION AND EVALUATION OF PHOSPHORUS- OR BORON-DOPED SILICON DIOXIDE FILMSADAMS AC; CAPIO CD; HASZKO SE et al.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 2; PP. 313-319; BIBL. 20 REF.Article