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A DEFECT MODEL FOR UNDOPED AND TELLURIUM DOPED GALLIUM ARSENIDEFEWSTER PF.1981; J. PHYS. CHEM. SOLIDS; GBR; DA. 1981-10; VOL. 42; NO 10; PP. 883-889; BIBL. 23 REF.Article

ABOUT THE MELTABILITY OF THE ALLOYING COMPOSITION BI2TE3ZHUKOV AA; FROLOV VV; DAVYDOV SV et al.1983; IZV. AKAD. NAUK SSSR, MET.; ISSN 0568-5303; SUN; DA. 1983-02; VOL. 1983; NO 1; PP. 183-184; BIBL. 7 REF.Article

FONTE MALLEABLE A TENEURS ELEVEES EN SILICIUM ET EN SOUFRE = HIGH SILICON AND SULPHUR MALLEABLE CAST-IRONZHUKOV AA; DAVYDOV SV.1983; FONDERIE, FONDEUR D'AUJOURD'HUI; ISSN 0249-3136; FRA; DA. 1983; NO 22; PP. 29-32; ABS. ENG/GER; BIBL. 6 REF.Article

PROCEEDINGS/INTERNATIONAL SYMPOSIUM ON INDUSTRIAL USES OF SELENIUM AND TELLURIUM, TORONTO ON, OCTOBER 21-23, 1980 = ACTES DE CONGRES. SYMPOSIUM INTERNATIONAL SUR LES UTILISATIONS INDUSTRIELLES DU SELENIUM ET DU TELLURE, TORONTO, ONTARIO 21-23 OCT 19801980; INTERNATIONAL SYMPOSIUM ON INDUSTRIAL USES OF SELENIUM AND TELLURIUM/1980-10-21/TORONTO ON; USA; DARIEN: SELENIUM-TELLURIUM DEVELOPMENT ASSOCIATION; DA. 1980; 366 P.; 28 CMConference Proceedings

Annealing of native defects in Te-doped GaAsSENGUPTA, A; BHATNAGAR, A. K; GOPINATHAN, K. P et al.Solid state communications. 1993, Vol 88, Num 6, pp 471-473, issn 0038-1098Article

Crystal growth of SrS from Te solution and its optical propertiesKANIE, H; KAGAWA, H; KATO, T et al.Journal of crystal growth. 1999, Vol 197, Num 3, pp 504-506, issn 0022-0248Conference Paper

Growth of GaAs from Ga solution under reduced gravity during the D2-missionDANILEWSKY, A. N; NAGEL, G; BENZ, K. W et al.Crystal research and technology (1979). 1994, Vol 29, Num 2, pp 171-178, issn 0232-1300Article

Pairing of Mn-acceptors and Te-donors in InP and related alloysADAMS, A. R; BENYON, R. P; GREENE, P. D et al.Solid state communications. 1994, Vol 89, Num 1, pp 69-72, issn 0038-1098Article

The properties of heavily compensated high resistivity GaSb crystalsMILVIDSKAYA, A. G; POLYAKOV, A. Y; KOLCHINA, G. P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 22, Num 2-3, pp 279-282, issn 0921-5107Article

Photoionization of the DX centers in Te-doped AlxGa1-xAs : absence of two-step photoionisation of DX centersSU, Z; FARMER, J. W; MIZUTA, M et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 7, pp 4412-4417, issn 0163-1829Article

Model of tellurium- and zinc-doped indium antimonide solidification in spaceCHURILOV, Alexei V; OSTROGORSKY, Aleksandar G.Journal of thermophysics and heat transfer. 2005, Vol 19, Num 4, pp 542-547, issn 0887-8722, 6 p.Conference Paper

SIMS detection in the 1012 atoms cm-3 rangeGNASER, H.Surface and interface analysis. 1997, Vol 25, Num 10, pp 737-740, issn 0142-2421Article

Zinc diffusion tellurium doped gallium antimonideCONIBEER, G. J; WILLOUGHBY, A. F. B; HARDINGHAM, C. M et al.Journal of electronic materials. 1996, Vol 25, Num 7, pp 1108-1112, issn 0361-5235Conference Paper

Temperature dependence of Vickers microhardness and creep of InBi:Te single crystalsJANI, T. M; PANDYA, G. R; DESAI, C. F et al.Crystal research and technology (1979). 1995, Vol 30, Num 2, pp K17-K20, issn 0232-1300Article

Excitation photocapacitance study of ionized levels in n-type GaAs observed during photoquenchingNISHIZAWA, J.-I; OYAMA, Y.Journal of the Electrochemical Society. 1998, Vol 145, Num 8, pp 2892-2894, issn 0013-4651Article

Impurity hardening of InBi single crystalsJANI, T. M; PANDYA, G. R; DESAI, C. F et al.Crystal research and technology (1979). 1994, Vol 29, Num 1, pp K3-K6, issn 0232-1300Article

Optical characterization of Ar+ ion implanted and annealed GaAs doping superlatticesKUNERT, H. W; MALHERBE, J. B; BRINK, D. J et al.Applied surface science. 1998, Vol 135, Num 1-4, pp 29-36, issn 0169-4332Article

Photoluminescence characterization of Te-doped GaSb layers grown by liquid-phase epitaxy from Bi meltsGLADKOV, P; MONOVA, E; WEBER, J et al.Semiconductor science and technology. 1997, Vol 12, Num 11, pp 1409-1415, issn 0268-1242Article

Grain boundary diffusion and grain boundary segregation of tellurium in silverHERZIG, C; GEISE, J; MISHIN, Y et al.Acta metallurgica et materialia. 1993, Vol 41, Num 6, pp 1683-1691, issn 0956-7151Article

Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilationLI HUI; ZHOU KAI; PANG JINGBIAO et al.Semiconductor science and technology. 2011, Vol 26, Num 7, issn 0268-1242, 075016.1-075016.6Article

Tellurium embrittlement of type 316 steelHEMSWORTH, J. A; NICHOLAS, M. G; CRISPIN, R. M et al.Journal of materials science. 1990, Vol 25, Num 12, pp 5248-5256, issn 0022-2461Article

Alliage complexe d'un acier avec du sélénium et du tellurePAVLOV, V. G; GOLUBTSOV, V. A; GUSEVA, Z. F et al.Izvestija vysših učebnyh Zavedenij. Černaja Metallurgija. 1986, Num 2, pp 24-30, issn 0368-0797Article

Photorefractive acousto-optic imaging in thick scattering media at 790 nm with a Sn2P2S6:Te crystalFARAHI, Salma; MONTEMEZZANI, Germano; GRABAR, Alexander A et al.Optics letters. 2010, Vol 35, Num 11, pp 1798-1800, issn 0146-9592, 3 p.Article

Cathodoluminescence study of Te-doped ZnO microstructures grown by a vapour-solid processIRIBARREN, A; FERNANDEZ, P; PIQUERAS, J et al.Journal of materials science. 2008, Vol 43, Num 8, pp 2844-2848, issn 0022-2461, 5 p.Article

Tailoring of infrared photorefractive properties of Sn2P2S6 crystals by Te and Sb dopingBACH, Tobias; JAZBINSEK, Mojca; MONTEMEZZANI, Germano et al.Journal of the Optical Society of America. B, Optical physics (Print). 2007, Vol 24, Num 7, pp 1535-1541, issn 0740-3224, 7 p.Article

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