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HILBERT NETWORKS. II. SOME QUALITATIVE PROPERTIES.DOLEZAL V; ZEMANIAN A.1975; S.I.A.M. J. CONTROL; U.S.A.; DA. 1975; VOL. 13; NO 1; PP. 153-161; BIBL. 9 REF.Article

SMALL-SIGNAL ADMITTANCE OF A MAGNETODIODE.PELEIDERER.1975; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1975; VOL. 4; NO 1; PP. 13-24; ABS. ALLEM.; BIBL. 1 P.Article

DUOCONICAL MONOPOLE.AL BADWAIHY KA.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 10; PP. 199-201; BIBL. 3 REF.Article

DIE BESTIMMUNG DER LEITWERTE DES GIACOLETTO-ERSATZBILDES VON TRANSISTOREN MIT HILFE VON EINFREQUENTEN ZWEIPOLMESSUNGEN = DETERMINATION DE L'ADMITTANCE DU SCHEMA EQUIVALENT DE GIACOLETTO PAR DES MESURES EN MONTAGE DIPOLE FAITES A UNE SEULE FREQUENCERICHTSCHEID A.1973; NACHR.-TECH. Z.; DTSCH.; DA. 1973; VOL. 26; NO 2; PP. 57-61; ABS. ANGL.; BIBL. 5 REF.Serial Issue

EQUATION GENERALISEE DU BILAN DES PUISSANCES ACTIVES DANS UN OSCILLATEUR SYNCHRONISEFOMIN NN.1977; RADIOTEKHNIKA; S.S.S.R.; DA. 1977; VOL. 32; NO 5; PP. 42-47; BIBL. 11 REF.Article

EXPRESSION FOR DECOUPLING IN MULTIPLE-BEAM ANTENNAS.LEWIN L.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 17; PP. 420-421; BIBL. 2 REF.Article

THE INSULATED MONOPOLE: ADMITTANCE AND JUNCTION EFFECTS. = L'ANTENNE UNIPOLAIRE ISOLEE: ADMITTANCE ET EFFETS DU DISPOSITIF DE JONCTIONKING RWP; MISHRA SR; LEE KM et al.1975; I.E.E.E. TRANS. ANTENNAS PROPAG.; U.S.A.; DA. 1975; VOL. 23; NO 2; PP. 172-177; BIBL. 7 REF.Article

ADMITTANCE CHARACTERISTICS OF LOOP ANTENNA USING MULTI-ELEMENTS.BHATTACHARYYA T.1975; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1975; VOL. 21; NO 1; PP. 14-16; BIBL. 4 REF.Article

CARACTERE INDUCTIF DE L'ADMITTANCE DE SORTIE DES TRANSISTORS DRIFTKUZNETSOV VI; MURAVSKIJ BS; EREMIN SA et al.1972; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1972; VOL. 17; NO 8; PP. 1778-1780; BIBL. 5 REF.Serial Issue

CALCULATION OF THE FREQUENCY DEPENDENCE OF THE ADMITTANCE OF SCLC DIODES.KASSING R.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 28; NO 1; PP. 107-117; ABS. ALLEM.; BIBL. 13 REF.Article

MEASUREMENT OF ADMITTANCE OF GUNN DIODES IN PASSIVE AND ACTIVE REGIONS OF BIAS VOLTAGEDE WAARD PJ.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 3; PP. 59-60; BIBL. 9 REF.Serial Issue

THE ADMITTANCE CHARACTERISTICS OF LONGITUDINAL SHUNT SLOTS IN THE BROAD FACE OF RECTANGULAR WAVEGUIDE.DAS BN; SINHA M.1975; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1975; VOL. 21; NO 1; PP. 32-37; BIBL. 7 REF.Article

A DYNAMIC ADMITTANCE METER BASED ON A VOLTAGE CONTROLLED OSCILLATOR IC.BUDDING RW; STRACKEE L.1975; REV. SCI. INSTRUM.; U.S.A.; DA. 1975; VOL. 46; NO 2; PP. 210-212; BIBL. 3 REF.Article

MEASUREMENT OF FOUR-PAIR ADMITTANCES WITH TWO-PAIR BRIDGES.SHIELDS JQ.1974; I.E.E.E. TRANS. INSTRUMENT. MEASUR.; U.S.A.; DA. 1974; VOL. 23; NO 4; PP. 345-352; BIBL. 8 REF.Article

ADMITTANCE DIFFERENTIELLE DES JONCTIONS P-N DU SILICIUM EN REGIME DE CLAQUAGE DE MESOPLASMAPENTYUSH EH V; DEKENA EH K; PURITIS T YA et al.1974; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1974; NO 2; PP. 39-44; ABS. ANGL.; BIBL. 5 REF.Article

A NONLINEAR INDEFINITE ADMITTANCE MATRIX FOR MODELING ELECTRONIC DEVICES.ARREOLA JI; LINDHOLM FA.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 765-767; BIBL. 11 REF.Article

LE CALCUL DES QUADRIPOLES PAR LES PARAMETRES FLOTTANTS.BENY A.1974; TOUTE ELECTRON.; FR.; DA. 1974; NO 392; PP. 53-57Article

ADMITTANCE CORRECTION FACTORS FOR GAP EXCITED CYLINDRICAL ANTENNAEWILLIAMSON AG.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 55; NO 3; PP. 441-448; BIBL. 6 REF.Article

TWO TERMINAL NEGATIVE ADMITTANCE USING BJT WITH FETKRISHNA MM.1982; INT. J. ELECTRON. THEOR. EXP.; ISSN 0020-7217; GBR; DA. 1982; VOL. 53; NO 3; PP. 303-304Article

A NUMERICAL STUDY ON REALIZABLE BROAD-BAND AND EQUIVALENT ADMITTANCES FOR DIPOLE AND LOOP ANTENNASSTREABLE GW; PEARSON LW.1981; IEEE TRANS. ANTENNAS PROPAG.; ISSN 0018-926X; USA; DA. 1981; VOL. 29; NO 5; PP. 707-717; BIBL. 15 REF.Article

INFRARED INPUT ADMITTANCE AND NOISE OF A SCHOTTKY BARRIER DIODE OPERATING IN THE THERMIONIC MODE.VAN DER ZIEL A.1976; PHYSICA B+C; PAYS-BAS; DA. 1976; VOL. 81; NO 1; PP. 107-110; BIBL. 1 REF.Article

ALGORITHME D'INVERSION DES BRANCHES D'UN CIRCUIT ELECTRIQUE LINEAIRESHAKIROV MA.1976; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1976; VOL. 19; NO 11; PP. 61-68; BIBL. 3 REF.Article

DISPOSITIF POUR LA MESURE DES PARAMETRES DE L'ADMITTANCE DES DIPOLESBORINETS ID; KOZYR I YA; FEDOROV VN et al.1976; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1976; NO 5; PP. 155-157; BIBL. 5 REF.Article

PD-THIN-SIO2-SI DIODE. II: THEORETICAL MODELING AND THE H2 RESPONSEBAHMAN KERAMATI; ZEMEL JN.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 1100-1109; BIBL. 17 REF.Article

LE CONVERTISSEUR D'IMAGES ELECTRONIQUES BI-PLANAR EN TANT QU'ELEMENT DU CIRCUIT ELECTRIQUEKRASNOV VF; TUROVSKIJ LA.1979; ZH. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1979; VOL. 49; NO 9; PP. 1966-1969; BIBL. 3 REF.Article

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