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LEED, AUGER AND PLASMON STUDIES OF NEGATIVE ELECTRON AFFINITY ON SI PRODUCED BY THE ADSORPTION OF CS AND OGOLDSTEIN B.1973; SURF. SCI.; NETHERL.; DA. 1973; VOL. 35; PP. 227-245; BIBL. 25 REF.; (SOLID-VAC. INTERFACE. PROC. 2ND SYMP. SURF. PHYS.; ENSCHEDE, NETH.; 1972)Conference Paper

THE PHYSICAL MODEL OF NEGATIVE ELECTRON AFFINITY PHOTOEMITTERSVAN LAAR J.1973; ACTA ELECTRON.; FR.; DA. 1973; VOL. 16; NO 3; PP. 215-227; ABS. FR. ALLEM.; BIBL. 53 REF.Serial Issue

CS-O NEGATIVE-ELECTRON-AFFINITY SURFACES ON SILICONHOWORTH JR; HOLTOM R; HARMER AL et al.1972; APPL. PHYS. LETTERS; U.S.A.; DA. 1972; VOL. 21; NO 7; PP. 316-317; BIBL. 6 REF.Serial Issue

THE FACE DEPENDENCE OF THE EMISSION OF ELECTRONS FROM GAAS ACTIVATED TO NEGATIVE ELECTRON AFFINITY.BURT MG; INKSON JC.1977; J. PHYS. D; G.B.; DA. 1977; VOL. 10; NO 5; PP. 721-727; BIBL. 9 REF.Article

IMPACT DE L'ELECTRO-AFFINITE NEGATIVE SUR LA TECHNOLOGIE DES TUBES A VIDEPIETRI G.1973; ACTA ELECTRON.; FR.; DA. 1973; VOL. 16; NO 3; PP. 261-265; MEME DOC. ANGLSerial Issue

ELECTRON AFFINITY OF SENSITIZER DYESTRUSTY JW; NELSON RC.1972; PHOTOGR. SCI. ENGNG; U.S.A.; DA. 1972; VOL. 16; NO 6; PP. 421-424; BIBL. 8 REF.Serial Issue

TRANSMISSION SILICON PHOTOEMITTERS AND ELECTRON MULTIPLIERS.HOWORTH JR; FOLKES JR; PALMER IC et al.1976; J. PHYS. D; G.B.; DA. 1976; VOL. 9; NO 5; PP. 785-794; BIBL. 16 REF.Article

NEGATIVE AFFINITY PHOTOCATHODE RESEARCH AND TECHNOLOGY.SPICER WE.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.: 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 57-59; BIBL. 13 REF.Conference Paper

NEGATIVE ELECTRON AFFINITY PHOTOEMITTERSROUGEOT H; BAUD C.1979; ADV. ELECTRON. ELECTRON PHYS.; USA; DA. 1979; VOL. 48; PP. 1-36; BIBL. 3 P.Article

THE SILICON COLD CATHODEKOHN ES.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 3; PP. 321-329; BIBL. 17 REF.Serial Issue

THEORETICAL APPROACH FOR RADIOSENSITIZERS. CORRELATION BETWEEN CALCULATED ELECTROAFFINITY AND SENSITIZATION FACTORS OF NITRO-COMPOUNDSSMEYERS YG; DE BUEREN A; ALCALA R et al.1981; INT. J. RADIAT. BIOL. RELAT. STUD. PHYS. CHEM. MED.; ISSN 0020-7616; GBR; DA. 1981; VOL. 39; NO 6; PP. 649-653; ABS. FRE/GER; BIBL. 16 REF.Article

SUR LA QUESTION DU RENDEMENT QUANTIQUE DES PHOTOCATHODES AVEC AFFINITE ELECTRONIQUE NEGATIVEBRAGIN NV; BONDAR SA; GAVANIN VA et al.1980; RADIOTEKH. I ELEKTRON.; SUN; DA. 1980; VOL. 25; NO 6; PP. 1244-1248; BIBL. 11 REF.Article

FOTOCATODI AD AFFINITA ELETTRONICA NEGATIVA MATERIALI IIIE V. = PHOTOCATHODE A AFFINITE ELECTRONIQUE NEGATIVE MATERIAU III ET VMALAGUZZI VALERI A.1976; ANTENNA; ITAL.; DA. 1976; VOL. 48; NO 2; PP. 63-64Article

CALCULATIONS ON THE PERFORMANCE OF GALLIUM ARSENIDE PHOTOCATHODES = CALCULS DES CARACTERISTIQUES DES PHOTOCATHODES A L'ARSENIURE DE GALLIUMALLEN GA.1973; ACTA ELECTRON.; FR.; DA. 1973; VOL. 16; NO 3; PP. 229-236; ABS. FR. ALLEM.; BIBL. 12 REF.Serial Issue

ELEKTRONENEMITTER NEGATIVER ELEKTRONENAFFINITAET ALS PHOTOKATHODEN = EMETTEURS D'ELECTRONS A AFFINITE D'ELECTRONS NEGATIVE COMME PHOTOCATHODESGORDAN P.1972; WISSENSCH. BER. A.E.G.-TELEFUNKEN; DTSCH.; DA. 1972; VOL. 45; NO 3; PP. 127-129; ABS. ANGL. ESP. FR.; BIBL. 17 REF.Serial Issue

RELATION ENTRE LES POTENTIELS D'IONISATION DANS LES SOUS-GROUPES D'ELEMENTS ET LES DETERMINATIONS PAR EXTRAPOLATION DES POTENTIELS D'IONISATION ET DES AFFINITES ELECTRONIQUES DE CERTAINS ELEMENTSKAMENEV AG; ZANDBERG EH YA; PALEEV VI et al.1974; ZH. TEKH. FIZ.; S.S.S.R.; DA. 1974; VOL. 44; NO 7; PP. 1507-1510; BIBL. 13 REF.Article

HIGH-SENSITIVITY TRANSMISSION-MODE GAAS PHOTOCATHODEGUTIERREZ WA; POMMERRENIG HD.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 6; PP. 292-293; BIBL. 8 REF.Serial Issue

PHOTOEMISSION DU SILICIUMRICHARD JC.1973; ACTA ELECTRON.; FR.; DA. 1973; VOL. 16; NO 3; PP. 245-250; ABS. ALLEM. ANGL.; BIBL. 12 REF.Serial Issue

VALEURS DE L'AFFINITE ELECTRONIQUE DES ACCEPTEURS ORGANIQUES NEUTRESKAMPAR V EH; NEJLAND O YA.1977; USP. KHIM.; S.S.S.R.; DA. 1977; VOL. 46; NO 6; PP. 945-966; BIBL. 2 P. 1/2Article

UNIAXIAL STRESS EFFECT ON THE ELECTRON AFFINITY OF THE D-STATE IN GERMANIUM.NARITA S; TANIGUCHI M.1976; PHYS. REV. LETTERS; U.S.A.; DA. 1976; VOL. 36; NO 15; PP. 913-915; BIBL. 14 REF.Article

REFLECTION AND TRANSMISSION SECONDARY EMISSION FROM GAASMARTINELLI RU; SCHULTZ ML; GOSSENBERGER HF et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 11; PP. 4803-4804; BIBL. 18 REF.Serial Issue

PROPRIETES ACIDO-BASIQUES DE L'HYDROGENE ATOMIQUEMAJ LA.1978; LATV. P.S.R. ZINAT. AKAD. VEST., KIM. SER.; S.S.S.R.; DA. 1978; NO 1; PP. 113; BIBL. 2 REF.Article

ELECTRONIC BAND STRUCTURE OF THE ALKALI HALIDES. I. EXPERIMENTAL PARAMETERS.POOLE RT; JENKIN JG; LIESEGANG J et al.1975; PHYS. REV.; U.S.A.; DA. 1975; VOL. 11; NO 12; PP. 5179-5189; BIBL. 1 P.Article

ELECTROPHILIC PROPERTY OF URANIUM HEXAFLUORIDE = PROPRIETE ELECTROPHILE DE L'HEXAFLUORURE D'URANIUMWU JC; WILLIAMS JR; HANDLEY JC et al.1972; J. SPACECR. ROCK.; U.S.A.; DA. 1972; VOL. 9; NO 8; PP. 614-616; BIBL. 7 REF.Serial Issue

TRANSMISSION SILICON PHOTOCATHODES.HOWORTH JR.1975; G.E.C.J. SCI. TECHNOL.; G.B.; DA. 1975; VOL. 42; NO 3; PP. 109-115; BIBL. 20 REF.Article

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