THE DETERMINATION OF A TRANSFER CURVE OF GE/SI RATIO FROM THE GAS PHASE TO THE SOLID PHASE OBTAINED BY EPITAXIAL GROWTH.AHARONI H.1976; ISRAEL J. TECHNOL.; ISRAEL; DA. 1976; VOL. 14; NO 4-5; PP. 165-171; BIBL. 3 REF.Article

THE SHAPE OF THE INPUT CHARACTERISTICS OF BJTS IN THE COMMON BASE AVALANCHE MODEAHARONI H.1979; MICROELECTRON. J.; GBR; DA. 1979; VOL. 10; NO 1; PP. 45-49; BIBL. 1 REF.Article

HIGHER-ORDER BREAKDOWN IN EPITAXIAL P⁺N/N⁺ JUNCTIONS.AHARONI H.1975; INTERNATION. J. ELECTRON.; G.B.; DA. 1975; VOL. 39; NO 1; PP. 105-112; BIBL. 3 REF.Article

BI-POLAR JUNCTION TRANSISTOR CHARACTERISTICS IN THE AVALANCHE MODE IN COMMON EMITTER CONFIGURATION.AHARONI H.1975; MICROELECTRONICS; G.B.; DA. 1975; VOL. 6; NO 4; PP. 21-29; BIBL. 8 REF.Article

NEGATIVE RESISTANCE IN TRANSISTORS OPERATED IN THE COMMON BASE AVALANCHE MULTIPLICATION MODEAHARONI H.1979; MICROELECTRON. J.; GBR; DA. 1979; VOL. 9; NO 4; PP. 27-32; BIBL. 5 REF.Article

Surface morphology of chemical vapor deposition grown Ge on Ge substratesAHARONI, H.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1986, Vol 4, Num 6, pp 2482-2491, issn 0734-2101Article

Redistribution phenomenon of residual impurities in undoped Gaas epitaxial layers grown by MOCVD as a function of growth timeAHARONI, H.Microelectronics. 1984, Vol 15, Num 6, pp 24-30, issn 0026-2692Article

Temperature dependence of surface morphology of chemical vapor deposition grown Ge on Ge substratesAHARONI, H.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 5, pp 1141-1147, issn 0734-211XArticle

Surface morphology of chemical vapor deposition grown Ge on Ge substratesAHARONI, H.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1986, Vol 4, Num 6, pp 2482-2491, issn 0734-2101Article

TRANSISTOR STRUCTURE RELATION TO SECONDARY BREAKDOWN AND ITS EFFECTS.AHARONI H; BAR LEV A.1975; MICROELECTRON. AND RELIABIL.; G.B.; DA. 1975; VOL. 14; NO 5-6; PP. 451-455; H.T. 2; BIBL. 5 REF.Article

MEASUREMENTS ON LIGHT EMISSION AND CURRENT DISTRIBUTION IN AVALANCHING EPITAXIAL DIODES.BAR LEV A; AHARONI H.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 8; PP. 537-539; BIBL. 5 REF.Article

THE ROLE OF CRYSTAL DEFECTS IN TRANSISTOR OPERATION AT HIGH POWER LEVELS.AHARONI H; BAR LEV A.1975; MICROELECTRONICS; G.B.; DA. 1975; VOL. 6; NO 3; PP. 11-15; BIBL. 5 REF.Article

SOME PRACTICAL REMARKS ON THE DESIGN OF EXPERIMENTAL SYSTEMS FOR EPITAXIAL GROWTH OF SI, GE AND SI-GE.AHARONI H; BAR LEV A.1974; VACUUM; G.B.; DA. 1974; VOL. 24; NO 2; PP. 89-93; BIBL. 7 REF.Article

PRE-SECONDARY BREAKDOWN BEHAVIOUR OF SILICON EPITAXIAL DIODES.BAR LEV A; AHARONI H.1975; INTERNATION. J. ELECTRON.; G.B.; DA. 1975; VOL. 38; NO 3; PP. 353-365; BIBL. 6 REF.Article

UNBALANCED ACTIVE REALIZATION OF NON-MINIMUM PHASE RC VOLTAGE TRANSFER FUNCTIONS: A SIMPLE APPROACH.BAR LEV A; AHARONI H.1975; INTERNATION. J. ELECTRON.; G.B.; DA. 1975; VOL. 38; NO 3; PP. 349-351; BIBL. 9 REF.Article

Some practical remarks on the in situ calibration of the sensitivity factor S of a quadrupole mass spectrometer for hydrogen and argon during rf sputtering for the growth of thin a-Si:H layersSWART, P. L; AHARONI, H.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1985, Vol 3, Num 5, pp 1935-1945, issn 0734-2101Article

WAVELENGTH TUNING OF GAAS LED'S THROUGH SURFACE EFFECTSKOPEIKA NS; AHARONI H; HIRSH I et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 4; PP. 334-347; BIBL. 45 REF.Article

SPECTRAL TUNING AND LINEWIDTH NARROWING OF SHALL-OW-JUNCTION SURFACE EMITTING GAAS LED'S THROUGH GAMMA -RAY IRRADIATIONHIRSH I; HAVA S; KOPEIKA NS et al.1983; IEEE JOURNAL OF QUANTUM ELECTRONICS; ISSN 0018-9197; USA; DA. 1983; VOL. 19; NO 1; PP. 29-33; BIBL. 12 REF.Article

A silicon transconductance light emitting device (TRANSLED)DU PLESSIS, M; AHARONI, H; SNYMAN, L. W et al.Sensors and actuators. A, Physical. 2000, Vol 80, Num 3, pp 242-248, issn 0924-4247Article

Some characteristics of the crystalline-amorphous threshold point of ³¹P⁺ ion-implanted silicon substratesAHARONI, H; SWART, P. L; LACQUET, B. M et al.IEEE transactions on nuclear science. 1991, Vol 38, Num 4, pp 976-978, issn 0018-9499Article

Effects of oxygen partial pressure during deposition on the properties of ion-beam-sputtered indium-tin oxide thin filmsBREGMAN, J; SHAPIRA, Y; AHARONI, H et al.Journal of applied physics. 1990, Vol 67, Num 8, pp 3750-3753, issn 0021-8979Article

In-situ measurement of crystalline-amorphous transition in Si substrates during ion implantationSWART, P. L; LACQUET, B. M; AHARONI, H et al.IEEE transactions on nuclear science. 1992, Vol 39, Num 3, pp 464-467, issn 0018-9499, 2Article

A comparative examination of ion implanted n⁺p junctions annealed at 1000°C and 450°CAHARONI, H; OHMI, T; SHIBATA, T et al.Japanese journal of applied physics. 1996, Vol 35, Num 9A, pp 4606-4617, issn 0021-4922, 1Article

Photoreflectance characterization of the space charge region in semiconductors: indium tin oxide on InP as a model systemBHATTACHARYA, R. N; SHEN, H; PARAYANTHAL, P et al.Solar cells. 1987, Vol 21, pp 371-377, issn 0379-6787Conference Paper

ITO/InP solar cells for space applicationNASEEM, S; COUTTS, T. J; AHARONI, H et al.IEEE photovoltaic specialists conference. 18. 1985, pp 332-337Conference Paper