Pore formation during the breakdown process in anodic Ta₂O₅ filmsMONTERO, I; FERNANDEZ, M; ALBELLA, J. M et al.Electrochimica acta. 1987, Vol 32, Num 1, pp 171-174, issn 0013-4686Article

AFM study of the dielectric breakdown in Ta₂O₅ filmsVAZQUEZ, L; MONTERO, I; ALBELLA, J. M et al.Chemistry of materials. 1995, Vol 7, Num 9, pp 1680-1685, issn 0897-4756Article

Influence of the discharge frequency (35 kHz and 13.56 MHz) on the composition of plasma enhanced chemical vapor deposition a-C:H filmsGOMEZ-ALEIXANDRE, C; SANCHEZ, O; ALBELLA, J. M et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1993, Vol 11, Num 1, pp 143-146, issn 0734-2101Article

Preparación de recubrimientos cerámicos mediante técnicas de CVD = Preparation of ceramic coatings by CVD techniquesOJEDA, F; MARTI, F. J; ALBELLA, J. M et al.Boletín de la Sociedad Española de Cerámica y Vidrio. 1998, Vol 37, Num 6, pp 447-453, issn 0366-3175Article

Growth of CrN_x films by DC reactive magnetron sputtering at constant N₂/Ar gas flowFORNIES, E; GALINDO, R. Escobar; SANCHEZ, O et al.Surface & coatings technology. 2006, Vol 200, Num 20-21, pp 6047-6053, issn 0257-8972, 7 p.Article

Electroless thin film Ni-P resistors with low temperature coefficientsFERNÁNDEZ, M; MARTÍNEZ-DUART, J. M; ALBELLA, J. M et al.Thin solid films. 1984, Vol 112, Num 1, pp L9-L12, issn 0040-6090Article

Gas evolution in aluminum electrolytic capacitorsGOMEZ-ALEXANDRE, C; ALBELLA, J. M; MARTINEZ-DUART, J. M et al.Journal of the Electrochemical Society. 1984, Vol 131, Num 3, pp 612-614, issn 0013-4651Article

Influence of hydrogen incorporation on the structure and stoichiometry of chemically vapor deposited silica filmsOJEDA, F; MONTERO, I; ABEL, F et al.Chemistry of materials. 2001, Vol 13, Num 11, pp 3986-3992, issn 0897-4756Article

Reaction of diborane and ammonia gas mixtures in a chemical vapor deposition hot-wall reactorGOMEZ-ALEIXANDRE, C; DIAZ, D; ORGAZ, F et al.Journal of physical chemistry (1952). 1993, Vol 97, Num 42, pp 11043-11046, issn 0022-3654Article

High field ionic conduction in anodic Ta₂O₅ formed in oxalic and phosphoric electrolytesMONTERO, I; ALBELLA, J. M; MARTINEZ-DUART, J. M et al.Journal of the Electrochemical Society. 1985, Vol 132, Num 4, pp 976-978, issn 0013-4651Article

Materials and vapour-phase techniques for the synthesis of ceramic coatingsALBELLA, J. M; JIMENEZ, I; GOMEZ-ALEIXANDRE, C et al.Boletín de la Sociedad Española de Cerámica y Vidrio. 2007, Vol 46, Num 4, pp 171-176, issn 0366-3175, 6 p.Article

Influence of the excitation frequency on CH₄/H/H₂ plasmas for diamond film deposition : electron energy distribution function and atomic hydrogen concentrationGORDILLO-VAZQUEZ, F. J; GOMEZ-ALEIXANDRE, C; ALBELLA, J. M et al.Plasma sources science & technology (Print). 2001, Vol 10, Num 1, pp 99-116, issn 0963-0252Article

Optical emission characterization of CH₄ + H₂ discharges for diamond depositionGOMEZ-ALEIXANDRE, C; SANCHEZ, O; CASTRO, A et al.Journal of applied physics. 1993, Vol 74, Num 6, pp 3752-3757, issn 0021-8979Article

Oxidation kinetics of plasma-enhanced chemical vapor deposition silicon nitride films deposited from SiH₄/NH₃/NH₃/N₂ mixturesGOMEZ-ALEIXANDRE, C; SANCHEZ GARRIDO, O; ALBELLA, J. M et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 3, pp 540-543, issn 0734-211XArticle

Electron injection and avalanche during the anodic oxidation of tantalum = Injection d'électron et avalanche au cours de l'anodisation du tantaleALBELLA, J. M; MONTERO, I; MARTINEZ-DUART, J. M et al.Journal of the Electrochemical Society. 1984, Vol 131, Num 5, pp 1101-1104, issn 0013-4651Article

Correlation between structure and optical properties in low emissivity coatings for solar thermal collectorsYUSTE, M; GALINDO, R. Escobar; SANCHEZ, O et al.Thin solid films. 2010, Vol 518, Num 20, pp 5720-5723, issn 0040-6090, 4 p.Article

Functionalization of hydrogen-free diamond-like carbon films using open-air dielectric barrier discharge atmospheric plasma treatmentsENDRINO, J. L; MARCO, J. F; ALLEN, M et al.Applied surface science. 2008, Vol 254, Num 17, pp 5323-5328, issn 0169-4332, 6 p.Article

X-ray absorption studies of bonding environments in graphitic carbon nitrideJIMENEZ, I; GAGO, R; ALBELLA, J. M et al.Diamond and related materials. 2001, Vol 10, Num 3-7, pp 1170-1174, issn 0925-9635Conference Paper

Low temperature nonilluminated anodization of n-type siliconMONTERO, I; GOMEZ-SAN ROMAN, R. J; ALBELLA, J. M et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 3, pp 544-550, issn 0734-211XArticle

Plasma anodization of silicon nitridePARKHUTIK, V. P; MAKUSHOK, YU. E; BORISOV, S. YU et al.Physica status solidi. A. Applied research. 1990, Vol 121, Num 2, pp K181-K183, issn 0031-8965Article

Co-sputtered Si-Cr resistive films = Couches résistives Si-Cr copulvériséesFERNANDEZ, M; GONZALEZ, J. P; ALBELLA, J. M et al.Journal of materials science. 1987, Vol 22, Num 10, pp 3703-3706, issn 0022-2461Article

Nanocrystalline diamond thin films deposited by 35 kHz Ar-rich plasmasLOPEZ, J. M; GORDILLO-VAZQUEZ, F. J; ALBELLA, J. M et al.Applied surface science. 2002, Vol 185, Num 3-4, pp 321-325, issn 0169-4332Article

Influence of ion current on the growth of carbon films by ion-beam-assisted depositionGAGO, R; BÖHME, O; ALBELLA, J. M et al.Diamond and related materials. 1999, Vol 8, Num 10, pp 1944-1950, issn 0925-9635Article

Carbon incorporation during the dielectric breakdown process of silicon oxideNAJMI, O; MONTERO, I; GALAN, L et al.Surface and interface analysis. 1997, Vol 25, Num 2, pp 94-98, issn 0142-2421Article

Space charge and electret behaviour in anodic Ta₂O₅ filmsMONTERO, I; ALBELLA, J. M; ORTEGA, C et al.Thin solid films. 1988, Vol 167, pp 95-100, issn 0040-6090, 6 p.Article