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A comparison of the material and device properties of homogeneous and compositional-graded Cu(In, Ga)(Se, S)2 chalcopyrite thin filmsALBERTS, V.Semiconductor science and technology. 2007, Vol 22, Num 6, pp 585-592, issn 0268-1242, 8 p.Article

Deposition of single-phase Cu(In, Ga)Se2 thin films by a novel two-stage growth techniqueALBERTS, V.Semiconductor science and technology. 2004, Vol 19, Num 1, pp 65-69, issn 0268-1242, 5 p.Article

Influence of initial growth parameters on the structural and optical properties of GaAs on (001) SiALBERTS, V.Journal of crystal growth. 1994, Vol 140, Num 3-4, pp 299-307, issn 0022-0248Article

Structural and in-depth compositional features of homogeneous pentenary chalcopyrite alloys prepared with a reproducible deposition technologyALBERTS, V.Journal of physics. D, Applied physics (Print). 2006, Vol 39, Num 1, pp 25-29, issn 0022-3727, 5 p.Article

Influence of thermal annealing and the incorporation of AlGaAs/GaAs superlattices on the structural and optical properties of GaAs on SiALBERTS, V.Semiconductor science and technology. 1993, Vol 8, Num 12, pp 2125-2134, issn 0268-1242Article

Photoluminescence study of GaAs grown on (001) SiALBERTS, V.Japanese journal of applied physics. 1994, Vol 33, Num 11, pp 6111-6120, issn 0021-4922, 1Article

THE REACTION OF PROPENE WITH IODINE BROMIDEALBERTS V; CARMAN RM.1980; AUSTRAL. J. CHEM.; AUS; DA. 1980; VOL. 33; NO 2; PP. 455-459; BIBL. 13 REF.Article

INTRAMOLECULAR PI COORDINATION IN GAMMA -PHENYLPROPYLMERCURIALSKITCHING W; DREW GM; ALBERTS V et al.1982; ORGANOMETALLICS; USA; DA. 1982; VOL. 1; NO 2; PP. 331-335; BIBL. 9 REF.Article

PRODUCTS OF 1,8-CINEOLE OXIDATION BY A PSEUDOMONADMACRAE IC; ALBERTS V; CARMAN RM et al.1979; AUSTRAL. J. CHEM.; AUS; DA. 1979; VOL. 32; NO 4; PP. 917-922; BIBL. 13 REF.Article

DUAL SUBSTITUENT PARAMETER ANALYSIS OF THE ETHYL AND IPSO 13C N.M.R. CHEMICAL SHIFTS OF SOME RING-SUBSTITUTED ETHYL-BENZENES AND ETHYLNAPHTHALENES.ADCOCK W; KITCHING W; ALBERTS V et al.1977; ORG. MAGNET. RESON.; G.B.; DA. 1977; VOL. 10; PP. 47-49; BIBL. 12 REF.Article

2H NUCLEAR MAGNETIC RESONANCE STUDY OF THE STEREOCHEMISTRY OF REDUCTION OF SOME ORGANOMERCURIALSKITCHING W; ATKINS AR; WICKHAM G et al.1981; J. ORG. CHEM.; ISSN 0022-3263; USA; DA. 1981; VOL. 46; NO 3; PP. 563-570; BIBL. 38 REF.Article

Deposition of single-phase CuIn(Se,S)2 thin films from the sulfurization of selenized CuIn alloysSHEPPARD, C. J; ALBERTS, V.Journal of physics. D, Applied physics (Print). 2006, Vol 39, Num 17, pp 3760-3763, issn 0022-3727, 4 p.Article

Preparation and structural properties of CuIn (Se, S)2 thin films prepared by the thermal diffusion of sulphur into CuInSe2DEJENE, F. B; ALBERTS, V.International journal of ambient energy. 2004, Vol 25, Num 2, pp 79-84, issn 0143-0750, 6 p.Article

Material properties of Cu(In, Ga)Se2 thin films prepared by the reaction of thermally evaporated compound materials in H2Se/ArALBERTS, V; CHENENE, M. L.Semiconductor science and technology. 2003, Vol 18, Num 9, pp 870-875, issn 0268-1242, 6 p.Article

In-depth compositional uniformity of CuInSe2 prepared by two-stage growth sequencesALBERTS, V; CHENENE, M. L.Journal of physics. D, Applied physics (Print). 1999, Vol 32, Num 24, pp 3093-3098, issn 0022-3727Article

Influence of GaSe deposition temperature on the structural properties and in-depth compositional features of two-step grown Cu(In, Ga)Se2thin filmsDEJENE, F. D; ALBERTS, V.Journal of materials science. Materials in electronics. 2003, Vol 14, Num 2, pp 89-95, issn 0957-4522, 7 p.Article

Material properties of CuIn(Se, S)2 thin films prepared by the thermal diffusion of sulfur into CuInSe2ALBERTS, V; DEJENE, F. D.Journal of physics. D, Applied physics (Print). 2002, Vol 35, Num 16, pp 2021-2025, issn 0022-3727Article

CONCERNING THE ELECTRONIC EFFECTS OF SUBSTITUTES METHYL GROUPSKITCHING W; ALBERTS V; ADCOCK W et al.1978; J. ORG. CHEM.; USA; DA. 1978; VOL. 43; NO 24; PP. 4652-4654; BIBL. 16 REF.Article

Structural and optical properties of homogeneous Cu(In, Ga)Se2 thin films prepared by thermal reaction of InSe/Cu/GaSe alloys with elemental se vapourDEJENE, F. B; ALBERTS, V.Journal of physics. D, Applied physics (Print). 2005, Vol 38, Num 1, pp 22-25, issn 0022-3727, 4 p.Article

Structural and compositional properties of Cu(In, Ga)Se2 thin films prepared by the thermal evaporation of compound materialsCHENENE, M. L; ALBERTS, V.Journal of physics. D, Applied physics (Print). 2003, Vol 36, Num 1, pp 56-61, issn 0022-3727, 6 p.Article

Deposition of CuIn(Se, S)2 thin films by sulfurization of selenized Cu/In alloysSHEPPARD, C. J; ALBERTS, V; BEKKER, W. J et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 10, pp 2234-2238, issn 0031-8965, 5 p.Conference Paper

Preparation of device quality chalcopyrite thin films by thermal evaporation of compound materialsKLENK, M; SCHENKER, O; ALBERTS, V et al.Semiconductor science and technology. 2002, Vol 17, Num 5, pp 435-439, issn 0268-1242Article

Control of two-step growth processes of chalcopyrite thin films by X-ray fluorescence spectroscopyKLENK, M; SCHENKER, O; ALBERTS, V et al.Applied surface science. 2001, Vol 173, Num 1-2, pp 62-68, issn 0169-4332Article

Preparation of device quality CulnSe2 by selenization of Se-containing precursors in H2Se atmosphereALBERTS, V; ZWEIGART, S; SCHOCK, H. W et al.Semiconductor science and technology. 1997, Vol 12, Num 2, pp 217-223, issn 0268-1242Article

Material properties of CuInSe2 prepared by H2Se treatment of CuIn alloysALBERTS, V; SWANEPOEL, R; WITCOMB, M. J et al.Journal of materials science. 1998, Vol 33, Num 11, pp 2919-2925, issn 0022-2461Article

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