An accurate transient model for BiCMOS gate optimizationJIMENEZ, V; ALCUBILLA, R.International journal of electronics. 1997, Vol 82, Num 5, pp 503-514, issn 0020-7217Article

Superposition solutions for emitter quantum efficiencyPONS, J; ALCUBILLA, R.Solid-state electronics. 1995, Vol 38, Num 1, pp 252-254, issn 0038-1101Article

Technologie des composants photovoltaïques AlGaAs-GaAs = AlGaAs-GaAs photovoltaic components technologyALCUBILLA, R; THEREZ, F.Matériaux et photopiles pour la conversion photovoltaïque de l'énergie solaire. Séminaire. 1985, pp 531-535Conference Paper

The impurity dose, a useful parameter for emitter designALCUBILLA, R; PONS, J.Solid-state electronics. 1991, Vol 34, Num 9, pp 1001-1005, issn 0038-1101Article

Very low recombination phosphorus emitters for high efficiency crystalline silicon solar cellsORTEGA, P; VETTER, M; BERMEJO, S et al.Semiconductor science and technology. 2008, Vol 23, Num 12, issn 0268-1242, 125032.1-125032.4Article

Comments on the use of the surface recombination velocity conceptCORREIG, X; CALDERER, J; BLASCO, E et al.Solid-state electronics. 1990, Vol 33, Num 5, pp 477-484, issn 0038-1101, 8 p.Article

Superposition solution for minority carrier current in the emitter of bipolar devicesALCUBILLA, R; PONS, J; CASTANER, L et al.Solid-state electronics. 1992, Vol 35, Num 4, pp 529-533, issn 0038-1101Article

AlGaAs-GaAs solar cells development, electrical analysis prospective for space applicationsCHIKOUCHE, A; ALCUBILLA, R; THEREZ, F et al.Photovoltaic specialists conference. 17. 1984, pp 111-116Conference Paper

Bipolar transistor vertical scaling frameworkCASTANER, L. M; ALCUBILLA, R; BENAVENT, A et al.Solid-state electronics. 1995, Vol 38, Num 7, pp 1367-1371, issn 0038-1101Article

Iterative solutions for highly doped emitters under illuminationALCUBILLA, R; BLASCO, E; CORREIG, X et al.IEE proceedings. Part G. Electronic circuits and systems. 1989, Vol 136, Num 3, pp 126-127, issn 0143-7089, 2 p.Article

AlGaAs-GaAs solar cell development: electrical analysis and prospects for space applicationTHEREZ, F; ALCUBILLA, R; CHIKOUCHE, A et al.Solar cells. 1986, Vol 18, Num 2, pp 163-170, issn 0379-6787Article

Réalisation et caractérisation d'un transistor à effet de champ JFET au GaAs en vue de son intégration avec une photodiode = Implementation and characterization of a field effect transistor Gaas JFET intended for integration with photodiodeBELAROUSSI, M. T; THEREZ, F; ALCUBILLA, R et al.Revue de physique appliquée. 1987, Vol 22, Num 1, pp 77-82, issn 0035-1687Article

Laser-fired contact optimization in c-Si solar cellsORTEGA, P; ORPELLA, A; MARTIN, I et al.Progress in photovoltaics (Print). 2012, Vol 20, Num 2, pp 173-180, issn 1062-7995, 8 p.Article

N-type PTCDI―C₁₃H₂₇ thin-film transistors deposited at different substrate temperaturePUIGDOLLERS, J; PIRRIERA, M. Della; MARSAL, A et al.Thin solid films. 2009, Vol 517, Num 23, pp 6271-6274, issn 0040-6090, 4 p.Conference Paper

Polymer microfibers obtained using porous silicon templatesMARSAL, L. F; FORMENTIN, P; PALACIOS, R et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 10, pp 2437-2440, issn 1862-6300, 4 p.Article

Crystalline silicon surface passivation by amorphous silicon carbide filmsVETTER, M; MARTIN, I; FERRE, R et al.Solar energy materials and solar cells. 2007, Vol 91, Num 2-3, pp 174-179, issn 0927-0248, 6 p.Article

Growth of 2D KTP photonic crystals for efficient second order nonlinear optical processesDI FINIZIO, Sergio; PENA, A; MARTORELLL, Jordi et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61820X.1-61820X.7, issn 0277-786X, isbn 0-8194-6238-1, 1VolConference Paper

Influence of the fabrication process on the light emission of Macroporous SiliconCHEYLAN, S; TRIFONOV, T; RODRIGUEZ, A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, issn 0277-786X, isbn 0-8194-5835-X, 2Vol, vol 2, 508-515Conference Paper

Analysis of photonic band gaps in two-dimensional photonic crystals with rods covered by a thin interfacial layerTRIFONOV, T; MARSAL, L. F; RODRIGUEZ, A et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 19, pp 195108.1-195108.8, issn 1098-0121, 1Article

Characterization and application of a-SiC_x:H films for the passivation of the c-Si surfaceMARTIN, I; VETTER, M; ORPELLA, A et al.Thin solid films. 2002, Vol 403-04, pp 476-479, issn 0040-6090Conference Paper

Electrical model for amorphous/crystalline heterojunction silicon diodes (n a-Si:H/p c-Si)MARSAL, L. F; PALLARES, J; CORREIG, X et al.Semiconductor science and technology. 1996, Vol 11, Num 8, pp 1209-1213, issn 0268-1242Article

Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistorsMARSAL, A; CARRERAS, P; PUIGDOLLERS, J et al.Thin solid films. 2014, Vol 555, pp 107-111, issn 0040-6090, 5 p.Conference Paper

3D metallo-dielectric structures combining electrochemical and electroplating techniquesHERNANDEZ, D; LANGE, D; TRIFONOV, T et al.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 1458-1462, issn 0167-9317, 5 p.Conference Paper

Semiconducting P3HT microstructures : fibres and tubes obtained from macroporous silicon templatePALACIOS, R; FORMENTIN, P; TRIFONOV, T et al.Physica status solidi. Rapid research letters (Print). 2008, Vol 2, Num 5, pp 206-208, issn 1862-6254, 3 p.Article

Visible light emission from macroporous SiCHEYLAN, S; TRIFONOV, T; RODRIGUEZ, A et al.Optical materials (Amsterdam). 2006, Vol 29, Num 2-3, pp 262-267, issn 0925-3467, 6 p.Article