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Structural transformation in silicon by pulse heatingALEKSANDROV, L. N.Progress in crystal growth and characterization of materials. 1992, Vol 24, Num 1, pp 53-109, issn 0960-8974Article

Mechanical stress in the crystallization process of amorphous semiconductors by pulse actionALEKSANDROV, L. N.Physica status solidi. A. Applied research. 1988, Vol 106, Num 2, pp K135-K138, issn 0031-8965Article

Simulation of the influence of mechanical stresses on the kinetics of crystallization of ion-implanted silicon layers under pulse heatingALEKSANDROV, L. N.Physica status solidi. A. Applied research. 1985, Vol 89, Num 2, pp 443-449, issn 0031-8965Article

Laser epitaxy of materials for electronicsALEKSANDROV, L. N.Progress in crystal growth and characterization. 1984, Vol 9, Num 3-4, pp 227-261, issn 0146-3535Article

Phase and structural modifications in porous silicon under pulse heatingALEKSANDROV, L. N.International journal of thermophysics. 1999, Vol 20, Num 4, pp 1223-1235, issn 0195-928XConference Paper

Kinetics of phase transitions in porous materialsALEKSANDROV, L. N; NOVIKOV, P. L.Physica status solidi. A. Applied research. 1996, Vol 158, Num 2, pp 419-426, issn 0031-8965Article

Shock crystallization of filmsALEKSANDROV, L. N; EDELMAN, F. L.Physica status solidi. A. Applied research. 1983, Vol 76, Num 2, pp 409-427, issn 0031-8965Article

Mass spectrometry of the tungsten-silicon systemALEKSANDROV, L. N; BOGOMOLOV, B. K.Physica status solidi. A. Applied research. 1985, Vol 88, Num 1, pp K15-K18, issn 0031-8965Article

Step flow at homoepitaxy of Si(111) with (7×7)↔(1×1) superstructure phase transitionZINOVYEV, V. A; BALANDIN, V. YU; ALEKSANDROV, L. N et al.Physica status solidi. B. Basic research. 1992, Vol 173, Num 2, pp K5-K9, issn 0370-1972Article

Melting of multilayered structures under pulse heating (computational experiment)ALEKSANDROV, L. N; BALANDIN, V. YU; DVURECHENSKII, V et al.Physica status solidi. A. Applied research. 1988, Vol 109, Num 1, pp K27-K29, issn 0031-8965Article

Détermination de la température de fusion des semiconducteurs amorphes d'après la cinétique de la cristallisation auto-entretenueKULYASOVA, O. A; BALANDIN, V. YU; DVURECHENSKIJ, A. V et al.Žurnal tehničeskoj fiziki. 1987, Vol 57, Num 12, pp 2397-2400, issn 0044-4642Article

Morphology of porous silicon structures formed by anodization of heavily and lightly doped siliconALEKSANDROV, L. N; NOVIKOV, P. L.Thin solid films. 1998, Vol 330, Num 2, pp 102-107, issn 0040-6090Article

Melting and crystallization of silicon layers on insulator with millisecond lamp heatingALEKSANDROV, L. N; ZINOVYEV, V. A.Crystal research and technology (1979). 1990, Vol 25, Num 3, pp 269-276, issn 0232-1300Article

Dynamic characteristics of radiation defects in siliconALEKSANDROV, L. N; ZOTOV, M. I.Physica status solidi. A. Applied research. 1985, Vol 91, Num 1, pp 57-61, issn 0031-8965Article

Enhanced diffusion of impurities in silicon during rapid thermal annealing (computer simulation)ALEKSANDROV, L. N; BONDAREVA, T. V.Physica status solidi. A. Applied research. 1991, Vol 125, Num 2, pp K71-K75, issn 0031-8965Article

Study of film crytallization kinetics initial stage by Monte Carlo simulationALEKSANDROV, L. N; BOCHKOVA, R. V; KISELEV, G. B et al.Crystal research and technology (1979). 1994, Vol 29, Num 1, pp 25-31, issn 0232-1300Article

Simulation of temperature and elastic fields and phase transitions in SOI structures formed by pulse heatingBALANDIN, V. YU; KULYASOVA, O. A; DVURECHENSKII, A. V et al.Physica status solidi. A. Applied research. 1991, Vol 123, Num 2, pp 415-430, issn 0031-8965Article

Study of the chemical reactions' influence on semiconductor films structure formation by the Monte-Carlo methodALEKSANDROV, L. N; KOGAN, A. N; BOCHKOVA, R. V et al.Crystal research and technology (1979). 1988, Vol 23, Num 2, pp 143-152, issn 0232-1300Article

Dislocation structure of epitaxial ferrite-spinel filmsALEKSANDROV, L. N; MITLINA, L. A; VASILYEV, A. L et al.Crystal research and technology (1979). 1986, Vol 21, Num 1, pp 89-95, issn 0232-1300Article

Silicon zone sublimation regrowthALEKSANDROV, L. N; LOZOVSKII, S. V; KNYAZEV, S. Y et al.Physica status solidi. A. Applied research. 1988, Vol 107, Num 1, pp 213-223, issn 0031-8965Article

Intermediate crystallization of amorphous layers of silicon at pulsed laser annealingBALANDIN, V. YU; DVURECHENSKII, A. V; ALEKSANDROV, L. N et al.Physica status solidi. A. Applied research. 1988, Vol 110, Num 1, pp 133-139, issn 0031-8965Article

Study of the peculiarities of film growth from molecular beams by the method of simulationALEKSANDROV, L. N; KOGAN, A. N; TIKHONOVA, N. P et al.Physica status solidi. A. Applied research. 1985, Vol 92, Num 1, pp 109-113, issn 0031-8965Article

Cinétique de décomposition des cristallites des phases métastables au cours de la croissance des siliciures de niobiumALEKSANDROV, L. N; BOGOMOLOV, B. K; GERASIMENKO, N. N et al.Fizika metallov i metallovedenie. 1985, Vol 59, Num 5, pp 987-995, issn 0015-3230Article

Etude des défauts d'irradiation du silicium irradié par neutronsALEKSANDROV, L. N; ZOTOV, M. I; STAS', V. F et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 1, pp 72-75, issn 0015-3222Article

Modelling of layer-by-layer sputtering of Si(111) surfaces under irradiation with low-energy ionsZINOVYEV, V. A; ALEKSANDROV, L. N; DVURECHENSKII, A. V et al.Thin solid films. 1994, Vol 241, Num 1-2, pp 167-170, issn 0040-6090Conference Paper

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