HIGH-GAIN LOW-NOISE GAALAS-GAAS PHOTOTRANSISTORSSCAVENNEC A; ANKRI D; BESOMBES C et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 394-395; BIBL. 11 REF.Article

SCHOTTKY BARRIER RESTRICTED GAALAS LASERTEMKIN H; CHIN AK; DUTT BV et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 16; PP. 701-703; BIBL. 11 REF.Article

FACET DEGRADATIONS IN GA_1-XAL_XAS/GA_1-YAL_YAS DOUBLE-HETEROSTRUCTURE LASERSHAYAKAWA T; YAMAMOTO S; SAKURAI T et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6068-6073; BIBL. 17 REF.Article

DETERMINATION OF MINORITY CARRIER LIFETIME AND EFFECTIVE BACK SURFACE RECOMBINATION VELOCITY IN BSF SILICON SOLAR CELLS FROM TRANSIENT MEASUREMENTSJAIN SC; AGARWAL SK; RAY UC et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 365-367; BIBL. 11 REF.Article

A SIMPLE METHOD OF DETERMINING THE AL CONCENTRATION IN GAALAS LAYERS USED IN DOUBLE HETEROSTRUCTURE LASERSBROSSON P; RIBERO CA.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 9; PP. 887-888; BIBL. 6 REF.Article

GAAS/GAALAS ACTIVE-PASSIVE-INTERFERENCE LASERCHOI HK; WANG S.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 8; PP. 302-303; BIBL. 6 REF.Article

MICROWAVE-INDUCED OSCILLATIONS IN CHANNELED SUBSTRATE PLANAR AND V-GROWE GAALAS LASERSRUEHLE W; BROSSON P; RIPPER JE et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 66; NO 2; PP. K87-K91; H.T. 1; BIBL. 15 REF.Article

OPTIMUM DESIGN CONDITIONS FOR ALGAAS WINDOW STRIPE LASERSUENO M.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 10; PP. 2113-2122; BIBL. 24 REF.Article

P-GAAS/P-GA_1-XAL_XAS ISOTYPE HETEROJUNCTIONS IN DOUBLE HETEROSTRUCTURE LASER MATERIALHAKKI BW.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6054-6058; BIBL. 28 REF.Article

REACTIVE OUTDIFFUSION OF CONTAMINANTS FROM (ALGA) AS LASER FACETSTIHANYI P; SCIFRES DR; BAUER RS et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 4; PP. 313-315; BIBL. 9 REF.Article

LOCKING BANDWIDTH ASYMMETRY IN INJECTIONLOCKED GAALAS LASERSGOLDBERG L; TAYLOR HF; WELLER JF et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 23; PP. 986-987; BIBL. 8 REF.Article

PULSED-POWER PERFORMANCE AND STABILITY OF 880 NM GAALAS/GAAS OXIDE-STRIPE LASERSKAPPELER F; METTLER K; ZSCHAUER KH et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 6; PP. 256-261; BIBL. 15 REF.Article

VERY LOW THRESHOLD-CURRENT TEMPERATURE SENSITIVITY IN CONSTRICTED DOUBLE-HETEROJUNCTION ALGAAS LASERSBOTEZ D; CONNOLLY JC; GILBERT DB et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 6; PP. 3840-3844; BIBL. 30 REF.Article

(GAAL)AS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS WITH GRADED COMPOSITION IN THE BASEMILLER DL; ASBECK PM; ANDERSON RJ et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 367-368; BIBL. 7 REF.Article

DEVICE CHARACTERISTICS OF (AL, GA) AS LASERS WITH GA(AS, SB) ACTIVE LAYERSANTHONY PJ; ZILKO JL; PAWLIK JR et al.1982; IEEE JOURNAL OF QUANTUM ELECTRONICS; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 7; PP. 1094-1100; BIBL. 54 REF.Article

INFLUENCE DE LA DISTRIBUTION ANGULAIRE DES PHOTONS DANS LES EMETTEURS A LARGE BANDE SUR LES CARACTERISTIQUES RADIATIVES DES HETEROJONCTIONSGARBUZOV DZ; DAVIDYUK N YU; ERMAKOVA AN et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 4; PP. 616-620; BIBL. 3 REF.Article

CARRIER-INDUCED INDEX CHANGE IN ALGAAS DOUBLE-HETEROSTRUCTURE LASERSMANNING JS; OLSHANSKY R.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 14; PP. 506-507; BIBL. 11 REF.Article

GAIN SUPPRESSION IN GAAS/ALGAAS TJS LASERSKAWANISHI H; PETERSEN PE.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 6; PP. 823-824; BIBL. 8 REF.Article

SEPARATED MULTICLAD-LAYER STRIPE-GEOMETRY GAALAS DH LASERISHIKAWA H; HANAMITSU K; TAKAGI N et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 7; PP. 1226-1234; BIBL. 32 REF.Article

FREQUENCY STABILIZATION OF GAALAS LASER USING A DOPPLER-FREE SPECTRUM OF THE CS-D₂ LINEHORI H; KITAYAMA Y; KITANO M et al.1983; IEEE JOURNAL OF QUANTUM ELECTRONICS; ISSN 0018-9197; USA; DA. 1983; VOL. 19; NO 2; PP. 169-175; BIBL. 20 REF.Article

OPTICALLY INTEGRATED COHERENTLY COUPLED AL_XGA_1-XAS LASERSLEVINE BF; LOGAN RA; TSANG WT et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 4; PP. 339-341; BIBL. 17 REF.Article

PHOTOPUMPED LOW THRESHOLD AL_X-CA_1-X-AS-AL_X, GA_1-X-AS-AL_XGA_1-XAS(X'' EQUIV. A 0.85, X' EQUIV. A 0.3, X=0) SINGLE QUANTUM WELL LASERSCAMRAS MD; HOLONYAK N JR; NIXON MA et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 9; PP. 761-763; BIBL. 14 REF.Article

CHARACTERISTICS AND ANALYSIS OF CHANNELED SUBSTRATE NARROW STRIPE GAAS/GAALAS LASERSCURTIS JP; PLUMB RG; GOODWIN AR et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 5; PP. 3444-3449; BIBL. 9 REF.Article

CONTINUOUS WAVE HIGH-POWER, HIGH-TEMPERATURE SEMI-CONDUCTOR LASER PHASE-LAKED ARRAYSSCIFRES DR; BURNHAM RD; STREIFER W et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1030-1032; BIBL. 26 REF.Article

DIRECT FREQUENCY MODULATION IN ALGAAS SEMICONDUCTOR LASERSKOBAYASHI S; YAMAMOTO Y; ITO M et al.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 4; PP. 582-595; BIBL. 21 REF.Article