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CONSTRICTED DOUBLE-HETEROJUNCTION ALGAAS DIODE LASERS: STRUCTURES AND ELECTROOPTICAL CHARACTERISTICSBOTEZ D.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 12; PART. 1; PP. 2290-2309; BIBL. 67 REF.Article

OPERATING CHARACTERISTICS OF GAALAS LASERS WITH ELEVATED FACET REFLECTIVITIESHALL DG; BEAR PD.1981; APPL. OPT.; ISSN 0003-6935; USA; DA. 1981; VOL. 20; NO 19; PP. 3283-3284; BIBL. 11 REF.Article

HIGH-GAIN LOW-NOISE GAALAS-GAAS PHOTOTRANSISTORSSCAVENNEC A; ANKRI D; BESOMBES C et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 394-395; BIBL. 11 REF.Article

SCHOTTKY BARRIER RESTRICTED GAALAS LASERTEMKIN H; CHIN AK; DUTT BV et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 16; PP. 701-703; BIBL. 11 REF.Article

FACET DEGRADATIONS IN GA1-XALXAS/GA1-YALYAS DOUBLE-HETEROSTRUCTURE LASERSHAYAKAWA T; YAMAMOTO S; SAKURAI T et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6068-6073; BIBL. 17 REF.Article

DETERMINATION OF MINORITY CARRIER LIFETIME AND EFFECTIVE BACK SURFACE RECOMBINATION VELOCITY IN BSF SILICON SOLAR CELLS FROM TRANSIENT MEASUREMENTSJAIN SC; AGARWAL SK; RAY UC et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 365-367; BIBL. 11 REF.Article

A SIMPLE METHOD OF DETERMINING THE AL CONCENTRATION IN GAALAS LAYERS USED IN DOUBLE HETEROSTRUCTURE LASERSBROSSON P; RIBERO CA.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 9; PP. 887-888; BIBL. 6 REF.Article

CAPACITANCE/VOLTAGE CHARACTERISTICS OF SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR (SIS) STRUCTURENAGAI K; HAYASHI Y; SEKIGAWA T et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 376-377; BIBL. 2 REF.Article

LOW-THRESHOLD SINGLE QUANTUM WELL (60 A) GAAPAS LASERS GROWN BY MO-CVD WITH MG AS P-TYPE DOPANTBURNHAM RD; STREIFER W; SCIFRES DR et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1095-1097; BIBL. 18 REF.Article

CW ROM-TEMPERATURE OPERATION OF GAALAS SINGLE QUANTUM WELL VISIBLE (7300 A) DIODE LASERS AT 100 MWBURNHAM RD; LINDSTROEM C; PAOLI TL et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 11; PP. 937-939; BIBL. 19 REF.Article

LOW-THRESHOLD GRIN-SCH GAAS/GAALAS LASER STRUCTURE GROWN BY OM VPEDE HERSEE S; BALDY M; ASSENAT P et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 14; PP. 618-620; BIBL. 7 REF.Article

GAAS/GAALAS ACTIVE-PASSIVE-INTERFERENCE LASERCHOI HK; WANG S.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 8; PP. 302-303; BIBL. 6 REF.Article

MICROWAVE-INDUCED OSCILLATIONS IN CHANNELED SUBSTRATE PLANAR AND V-GROWE GAALAS LASERSRUEHLE W; BROSSON P; RIPPER JE et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 66; NO 2; PP. K87-K91; H.T. 1; BIBL. 15 REF.Article

OPTIMUM DESIGN CONDITIONS FOR ALGAAS WINDOW STRIPE LASERSUENO M.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 10; PP. 2113-2122; BIBL. 24 REF.Article

P-GAAS/P-GA1-XALXAS ISOTYPE HETEROJUNCTIONS IN DOUBLE HETEROSTRUCTURE LASER MATERIALHAKKI BW.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6054-6058; BIBL. 28 REF.Article

REACTIVE OUTDIFFUSION OF CONTAMINANTS FROM (ALGA) AS LASER FACETSTIHANYI P; SCIFRES DR; BAUER RS et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 4; PP. 313-315; BIBL. 9 REF.Article

LOCKING BANDWIDTH ASYMMETRY IN INJECTIONLOCKED GAALAS LASERSGOLDBERG L; TAYLOR HF; WELLER JF et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 23; PP. 986-987; BIBL. 8 REF.Article

PULSED-POWER PERFORMANCE AND STABILITY OF 880 NM GAALAS/GAAS OXIDE-STRIPE LASERSKAPPELER F; METTLER K; ZSCHAUER KH et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 6; PP. 256-261; BIBL. 15 REF.Article

VERY LOW THRESHOLD-CURRENT TEMPERATURE SENSITIVITY IN CONSTRICTED DOUBLE-HETEROJUNCTION ALGAAS LASERSBOTEZ D; CONNOLLY JC; GILBERT DB et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 6; PP. 3840-3844; BIBL. 30 REF.Article

(GAAL)AS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS WITH GRADED COMPOSITION IN THE BASEMILLER DL; ASBECK PM; ANDERSON RJ et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 367-368; BIBL. 7 REF.Article

DEVICE CHARACTERISTICS OF (AL, GA) AS LASERS WITH GA(AS, SB) ACTIVE LAYERSANTHONY PJ; ZILKO JL; PAWLIK JR et al.1982; IEEE JOURNAL OF QUANTUM ELECTRONICS; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 7; PP. 1094-1100; BIBL. 54 REF.Article

PROPERTIES OF DIODE LASERS WITH INTENSITY NOISE CONTROLDANDRIDGE A; TVETEN AB.1983; APPLIED OPTICS; ISSN 0003-6935; USA; DA. 1983; VOL. 22; NO 2; PP. 310-312; BIBL. 7 REF.Article

THRESHOLD-TEMPERATURE CHARACTERISTICS IN (GAAL)AS VISIBLE LASER DIODES EMITTING BELOW 750 NMHAYAKAWA T; SUYAMA T; YAMAMOTO S et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 6; PP. 2983-2986; BIBL. 13 REF.Article

REVIEW OF RELIABILITY IMPROVEMENTS OF GAALAS LASER DIODESEINHORN AJ; BARRY JD.1982; MICROELECTRON. RELIAB.; ISSN 0026-2714; GBR; DA. 1982; VOL. 22; NO 4; PP. 769-780; BIBL. 15 REF.Article

SPECTRAL CHARACTERISTICS OF SEMICONDUCTOR LASERS WITH OPTICAL FEEDBACKGOLDBERG L; TAYLOR HF; DANDRIDGE A et al.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 4; PP. 555-564; BIBL. 13 REF.Article

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