GAIN BROADENING MECHANISM IN VARIOUS GAALAS LASER STRUCTURESRUEHLE W; BROSSON P.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 11; PP. 5949-5953; BIBL. 16 REF.Article

INJECTION LOCKING CHARACTERISTICS OF AN ALGAAS SEMICONDUCTOR LASERKOBAYASHI S; KIMURA T.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 9; PP. 915-917; BIBL. 6 REF.Article

BANDWIDTH-LIMITED PICOSECOND PULSE GENERATION IN AN ACTIVELY MODE-LOCKED GAALAS DIODE LASERHOLBROOK MB; SLEAT WE; BRADLEY DJ et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 1; PP. 59-61; BIBL. 14 REF.Article

PHOTOCONDUCTIVITY EFFECTS IN EXTREMELY HIGH MOBILITY MODULATION-DOPED (AL, GA) AS/GAAS HETEROSTRUCTURESDRUMMOND TJ; KOPP W; FISCHER R et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 1238-1240; BIBL. 13 REF.Article

SCHOTTKY BARRIER RESTRICTED GAALAS LASERTEMKIN H; CHIN AK; DUTT BV et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 16; PP. 701-703; BIBL. 11 REF.Article

FACET DEGRADATIONS IN GA_1-XAL_XAS/GA_1-YAL_YAS DOUBLE-HETEROSTRUCTURE LASERSHAYAKAWA T; YAMAMOTO S; SAKURAI T et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6068-6073; BIBL. 17 REF.Article

GAALAS STRIPE LASER WITH STABLE TRANSVERSE MODE STRUCTURELANDREAU J; DELPECH P; CHARIL J et al.sdOPTICAL COMMUNICATION CONFERENCE. EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION. 5/1979/AMSTERDAM; NLD; DA. S.D.; PP. 2.4.1-2.4.4; BIBL. 3 REF.Conference Paper

IMPROVEMENTS OF THE ELECTRO-OPTIC PROPERTIES OF (AL, GA) AS LASERS BY MEANS OF REDUCED REFLECTION DIELECTRIC FACET COATINGSNASH FR; PAOLI TL; HARTMAN RL et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 1; PP. 48-54; BIBL. 40 REF.Article

A SIMPLE METHOD OF DETERMINING THE AL CONCENTRATION IN GAALAS LAYERS USED IN DOUBLE HETEROSTRUCTURE LASERSBROSSON P; RIBERO CA.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 9; PP. 887-888; BIBL. 6 REF.Article

REACTIVE OUTDIFFUSION OF CONTAMINANTS FROM (ALGA) AS LASER FACETSTIHANYI P; SCIFRES DR; BAUER RS et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 4; PP. 313-315; BIBL. 9 REF.Article

LOCKING BANDWIDTH ASYMMETRY IN INJECTIONLOCKED GAALAS LASERSGOLDBERG L; TAYLOR HF; WELLER JF et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 23; PP. 986-987; BIBL. 8 REF.Article

PULSED-POWER PERFORMANCE AND STABILITY OF 880 NM GAALAS/GAAS OXIDE-STRIPE LASERSKAPPELER F; METTLER K; ZSCHAUER KH et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 6; PP. 256-261; BIBL. 15 REF.Article

TOWARD QUANTUM WELL WIRES: FABRICATION AND OPTICAL PROPERTIESPETROFF PM; GOSSARD AC; LOGAN RA et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 7; PP. 635-638; BIBL. 9 REF.Article

RECTIFICATION IN AL_XGA_1-XAS-GAAS N-N HETEROJUNCTION DEVICESLEE SC; PEARSON GL.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 6; PP. 563-568; BIBL. 14 REF.Article

TRANSVERSE MODE STABILIZED GAALAS DH LASERSHANAMITSU K; FUJIWARA T; TAKUSAGAWA M et al.1981; FUJITSU SCI. TECH. J.; ISSN 0016-2523; JPN; DA. 1981; VOL. 17; NO 1; PP. 87-100; BIBL. 23 REF.Article

VERY LOW THRESHOLD-CURRENT TEMPERATURE SENSITIVITY IN CONSTRICTED DOUBLE-HETEROJUNCTION ALGAAS LASERSBOTEZ D; CONNOLLY JC; GILBERT DB et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 6; PP. 3840-3844; BIBL. 30 REF.Article

BURIED HETEROSTRUCTURE ALGAAS LASERS ON SEMI-INSULATING SUBSTRATESBAR CHAIM N; KATZ J; URY I et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 3; PP. 108-109; BIBL. 8 REF.Article

OPTIMUM EPILAYER STRUCTURES FOR INTEGRATED OPTICS LASERSCHANG MB; GARMIRE E.1980; APPL. OPT.; USA; DA. 1980; VOL. 19; NO 14; PP. 2370-2374; BIBL. 4 REF.Article

REAL-SPACE ELECTRON TRANSFER BY THERMONIC EMISSION IN GAAS-AL_XGA_1-XAS HETEROSTRUCTURES: ANALYTICAL MODEL FOR LARGE LAYER WIDTHSSHICHIJO H; HESS K; STEETMAN BG et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 8; PP. 817-822; BIBL. 15 REF.Article

ACCELERATED FACET EROSION FORMATION AND DEGRADATION OF (AL, GA) AS DOUBLE-HETEROSTRUCTURE LASERSNASH FR; HARTMAN RL.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 10; PP. 1022-1033; BIBL. 59 REF.Article

GAAS/GAALAS ACTIVE-PASSIVE-INTERFERENCE LASERCHOI HK; WANG S.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 8; PP. 302-303; BIBL. 6 REF.Article

COMMENTS "IMPACT IONIZATION IN GA_1-XAL_XSB: AN ALTERNATIVE INTERPRETATION"HILDEBRAND O.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 3; PP. 442-443; BIBL. 2 REF.Article

PHOTOLUMINESCENCE INVESTIGATION OF RESIDUAL SHALLOW ACCEPTORS IN AL_XGA_1-XAS GROWN BY METALORGANIC VAPOR PHASE EPITAXYMIRCEA ROUSSEL A; BRIERE A; HALLAIS J et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 6; PP. 4351-4356; BIBL. 34 REF.Article

ZN DIFFUSION AND DISORDERING OF AN ALAS-GAAS SUPERLATTICE ALONG ITS LAYERSKIRCHOEFER SW; HOLONYAK N JR; COLEMAN JJ et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 766-768; BIBL. 10 REF.Article

INFLUENCE OF AN UNDOPED (ALGA)AS SPACER ON MOBILITY ENHANCEMENT IN GAAS-(ALGA)AS SUPERLATTICESSTOERMER HL; PINCZUK A; GOSSARD AC et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 9; PP. 691-693; BIBL. 15 REF.Article