GA_0.47IN_0.53AS/AL_0.48IN_0.52AS MULTIQUANTUM-WELL LEDS EMITTING AT 1.6 MU MALAVI K; PEARSALL TP; FORREST SR et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 6; PP. 227-229; BIBL. 11 REF.Article

ION-IMPLANTED IN⁰,53)GA⁰,47)AS/IN⁰,48)AS LATERAL PNP TRANSISTORSTABATABAIE ALAVI K; CHOUDHURY ANMM; ALAVI K et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 12; PP. 379-381; BIBL. 12 REF.Article

PROPRIETES ELECTROLYTIQUES DE SOLUTIONS SOLIDES DU SYSTEME INAS-ALASMATYAS EH E.1981; VESCI AKAD. NAVUK BSSR, SER. FIZ.-MAT. NAVUK; ISSN 0002-3574; BYS; DA. 1981; NO 5; PP. 91-93; ABS. ENG; BIBL. 5 REF.Article

CURRENT TRANSPORT IN AL/INALAS/INGAAS HETEROSTRUCTURESMORGAN DV; BOARD K; WOOD CEC et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 1; PP. 251-260; ABS. GER; BIBL. 5 REF.Article

MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITY OF MOLECULAR BEAM EPITAXIAL GROWN IN_0.52AL_0.48AS/IN_0.53GA_0.47AS, N-N HETEROJUNCTION BY C-V PROFILINGPEOPLE R; WECHT KW; ALAVI K et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 43; NO 1; PP. 118-120; BIBL. 10 REF.Article

TWO-DIMENSIONAL ELECTRON GAS AT A MOLECULAR BEAM EPITAXIAL-GROWN, SELECTIVELY DOPED, IN_0.53 GA_0.47 AS-IN_0.48 AL_0.52 AS INTERFACEKASTALSKY A; DINGLE R; CHENG KY et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 3; PP. 274-277; BIBL. 10 REF.Article

TIN DOPING IN GA_0.47IN_0.53AS AND AL_0.48IN_0.52AS GROWN BY MOLECULAR-BEAM EPITAXYCHENG KY; CHO AY; WAGNER WR et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6328-6330; BIBL. 15 REF.Article

Evidence of non-communitativity of band discontinuities in InP-Al(IN)As-Ga(In)As heterostructuresLUGAGNE-DELPON, E; ANDRE, J. P; VOISIN, P et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 635-639, issn 0038-1101Conference Paper

Effective mass filtering: giant quantum amplification of the photocurrent in a semiconductor superlatticeCAPASSO, F; KHALID MOHAMMED; CHO, A. Y et al.Applied physics letters. 1985, Vol 47, Num 4, pp 420-422, issn 0003-6951Article

Photoluminescence determination of well depth of Ga_0.47In_0.53As/Al_0.48In_0.52As in an ultrathin single quantum wellSHUM, K; HO, P. P; ALFANO, R. R et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 6, pp 3806-3810, issn 0163-1829Article

Calculation of the conduction band discontinuity for Ga_0.47In_0.53As/Al_0.48In_0.52As heterojunctionWELCH, D. F; WICKS, G. W; EASTMAN, L. F et al.Journal of applied physics. 1984, Vol 55, Num 8, pp 3176-3179, issn 0021-8979Article

Staggered-lineup heterojunctions as sources of tunable below-gap radiation: experimental verificationCAINE, E. J; SUBBANNA, S; KROEMER, H et al.Applied physics letters. 1984, Vol 45, Num 10, pp 1123-1125, issn 0003-6951Article

Effects of buffer layers in GaAs-In_0.2Al_0.8As strained-layer superlatticesNAKAYAMA, M; KUBOTA, K; KATO, H et al.Applied physics letters. 1986, Vol 48, Num 4, pp 281-283, issn 0003-6951Article

Required grading length to eliminate the heterojunction spike in npn In_0.52Al_0.48As/In_0.53Ga_0.47As/InP bipolar transistorsCHAND, N; MORKOC, H.Electronics Letters. 1985, Vol 21, Num 19, pp 841-843, issn 0013-5194Article

In_0.52Al_0.48As/In_0.53Ga_0.47As/In_0.52Al_0.48As abrupt double-heterojunction bipolar transistorsWAI LEE; FONSTAD, C. G.IEEE electron device letters. 1986, Vol 7, Num 12, pp 683-685, issn 0741-3106Article

LIQUID PHASE EPITAXIAL GROWTH OF LATTICE-MATCHED AL_0.48IN_0.52AS ON INPNAKAJIMA K; TANAHASHI T; AKITA K et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 2; PP. 194-196; BIBL. 8 REF.Article

SILICON DOPING AND IMPURITY PROFILES IN GA_0.47IN_0.53AS AND AL_0.48IN_0.52AS GROWN BY MOLECULAR BEAM EPITAXYCHENG KY; CHO AY.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 6; PP. 4411-4415; BIBL. 25 REF.Article

CURRENT TRANSPORT IN MODULATION-DOPED GA_0.47IN_0.53AS/AL_0.48IN_0.52AS HETEROJONCTIONS AT MODERATE ELECTRIC FIELDSDRUMMOND TJ; MORKOC H; CHENG KY et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 5; PP. 3654-3657; BIBL. 14 REF.Article

MOLECULAR-BEAM EPITAXIAL GROWTH OF UNIFORM GA₀₄₇IN₀₅₃AS WITH A ROTATING SAMPLE HOLDERCHENG KY; CHO AY; WAGNER WR et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 8; PP. 607-609; BIBL. 5 REF.Article

DEPENDENCE OF ELECTRON MOBILITY ON SPACER THICKNESS AND ELECTRON DENSITY IN MODULATION-DOPED GA_0.47IN_0.53AS/AL_0.48IN_0.52AS HETEROJUNCTIONSHSIEH KH; OHNO H; WICKS G et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 5; PP. 160-162; BIBL. 10 REF.Article

ELECTRON MOBILITIES IN MODULATION DOPED GA_0.47IN_0.53AS/AL_0.48IN_0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR BEAM EPITAXYCHENG KY; CHO AY; DRUMMOND TJ et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 2; PP. 147-149; BIBL. 13 REF.Article

SHORT CHANNEL GA_0.47IN_0.53AS/AL_0.48IN_0.52AS SELECTIVELY DOPED FIELD EFFECT TRANSISTORSCHEN CY; CHO AY; ALAVI K et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 8; PP. 205-208; BIBL. 13 REF.Article

High-speed InAlAs/InGaAs heterojunction bipolar transistorsFUKANO, H; KAWAMURA, Y; TAKANASHI, Y et al.IEEE electron device letters. 1988, Vol 9, Num 6, pp 312-314, issn 0741-3106Article

Ga_0.4In_0.6As/Al_0.55In_0.45As pseudomorphic modulation-doped field-effect transistorsKUO, J. M; TAO-YUANG CHANG; LALEVIC, B et al.IEEE electron device letters. 1987, Vol 8, Num 9, pp 380-382, issn 0741-3106Article

Photoluminescence study of In_xAl_1-xAs-GaAs strained-layer superlatticesKATO, H; IGUCHI, N; CHIKA, S et al.Journal of applied physics. 1986, Vol 59, Num 2, pp 588-592, issn 0021-8979Article