CONFIGURATIONS OF CLOSE-PACKED CLUSTERS OF SUBSTITUTIONAL POINT DEFECTS IN CRYSTALS.CROCKER AG.1975; PHILOS. MAG.; G.B.; DA. 1975; VOL. 32; NO 2; PP. 379-403; BIBL. 9 REF.Article

CALCULATIONS OF DEFECT CLUSTERING IN FE_1-XO.CATLOW CRA; FENDER BEF.1975; J. PHYS. C; G.B.; DA. 1975; VOL. 8; NO 20; PP. 3267-3279; BIBL. 19 REF.Article

THE THEORY OF DIFFUSE X RAY SCATTERING AND ITS APPLICATION TO THE STUDY OF POINT DEFECTS AND THEIR CLUSTERSDEDERICHS PH.1973; J. PHYS. F; G.B.; DA. 1973; VOL. 3; NO 2; PP. 471-496; BIBL. 1 P.Serial Issue

TOPOGRAPHIC REPRESENTATION OF MICRODEFECTS (E.G. "SWIRLS") IN NEARLY PERFECT CRYSTALS. A RESTRICTING SUPPLEMENT TO AN EARLIER CLAIMRENNINGER M.1981; J. APPL. CRYSTALLOGR.; ISSN 0021-8898; DNK; DA. 1981; VOL. 14; NO 1; PP. 59; BIBL. 3 REF.Article

POINT DEFECT CLUSTERS IN NEUTRON-IRRADIATED MOLYBDENUM. I. DOSE DEPENDENCE OF THE NUMBER DENSITY AND THE MEAN DIAMETER OF RADIATION-INDUCED DISLOCATION LOOPS.NIEBEL K; WILKENS M.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 24; NO 2; PP. 591-600; ABS. ALLEM.; BIBL. 20 REF.Article

THE FORMATION OF DEFECT CLUSTERS IN GOLD BY LIGHT ION BOMBARDMENT.HOEGBERG G; NORDEN H.1974; ARK. FYS.; SVERIGE; DA. 1974; VOL. 40; NO 6; PP. 521-530; BIBL. 9 REF.Article

HIGH VOLTAGE ELECTRON TRANSMISSION MICROSCOPY OF PYROLYTIC SILICON CARBIDE COATINGS FROM NUCLEAR FUEL PARTICLESHUDSON B; SHELDON BE.1973; J. MICR.; G.B.; DA. 1973; VOL. 97; NO 1-2; PP. 113-119; BIBL. 15 REF.Serial Issue

DETERMINATION DES CONTRAINTES DE DEPART DES DISLOCATIONS DANS LES CRISTAUX DE FLUORURE DE LITHIUM IRRADIES PAR ELECTRONS DE HAUTE ENERGIEGARBER RI; MALIK AK; MIKHAJLOVSKIJ VM et al.1974; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1974; VOL. 19; NO 8; PP. 1238-1241; ABS. ANGL.; BIBL. 9 REF.Article

FORMATION DES BOUCLES DE DISLOCATION SUR LES PRECIPITES DANS LES CRISTAUX D'OXYDE DE MAGNESIUMZAKHAROV ND; KESTNER G; ROZHANSKIJ VN et al.1974; FIZ. TVERD. TELA; S.S.S.R.; DA. 1974; VOL. 16; NO 9; PP. 2777-2779; BIBL. 7 REF.Article

ANALYTICAL APPROACH TO THE NUCLEATION AND GROWTH OF DEFECT AGGREGATES UNDER IRRADIATION.PFISTER JC.1977; RAD. EFFECTS; G.B.; DA. 1977; VOL. 33; NO 4; PP. 215-217; BIBL. 2 REF.Article

ORDERING OF THE POINT DEFECTS IN NONSTOICHIOMETRIC CRYSTALS OF NB₁₂O₂₉.IIJIMA S.1975; ACTA CRYSTALLOGR., A; DANEM.; DA. 1975; VOL. 31; NO 6; PP. 784-790; H.T. 4; BIBL. 16 REF.Article

INVESTIGATION OF POINT DEFECTS AND THEIR AGGLOMERATES IN IRRADIATED METALS BY DIFFUSE X-RAY SCATTERING.EHRHART P; HAUBOLD HG; SCHILLING W et al.1974; IN: FESTKOERPER PROBL. XIV. PLENARY LECT. GER. PHYS. SOC.; FREUDENSTADT; 1974; OXFORD; PERGAMON; DA. 1974; PP. 87-110; BIBL. 34 REF.Conference Paper

ANNEALING AND CLUSTERING DEFECTS IN CASCADES.MARTYNENKO YV.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 29; NO 3; PP. 129-135; BIBL. 11 REF.Article

ANOMALOUS X-RAY TRANSMISSION IN DISLOCATION-FREE SILICON AFTER ELECTRON IRRADIATIONFRITSCH G; KOEHLER JS.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 4; PP. 1859-1865; BIBL. 17 REF.Article

DISSOLUTION DES MICRODEFAUTS DANS LE SILICIUM SANS DISLOCATIONSMILEVSKIJ LS; VYSOTSKAYA VV; SIDOROV YU A et al.1980; FIZ. HIM., OBRAB. MATER.; ISSN 0015-3214; SUN; DA. 1980; NO 1; PP. 153-154; BIBL. 6 REF.Article

A MODEL FOR THE FORMATION OF STACKING FAULTS IN SILICON.MAHAJAN S; ROZGONYI GA; BRASEN D et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 2; PP. 73-75; BIBL. 25 REF.Article

DEFECT PROPERTIES FROM X-RAY SCATTERING EXPERIMENTS.PEISL H.1976; J. PHYS., COLLOQ.; FR.; DA. 1976 PARU 1977; PP. 47-53; ABS. FR.; BIBL. 24 REF.; (CONF. INT. DEFAUTS RESEAU CRISTAUX IONIQUES. 2; BERLIN; 1975)Conference Paper

THE KINETICS OF FORMATION AND THE PARAMETERS OF RADIATION DEFECT CLUSTERS IN SILICON.VINETSKII VL; KONDRACHUK AV.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 30; NO 4; PP. 227-232; BIBL. 9 REF.Article

DEFECTS IN IMPLANTED AND CZOCHRALSKI SILICONSALISBURY IG.1983; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1983; VOL. 18; NO 1; PP. 15-20; BIBL. 18 REF.Article

INFLUENCE DES CHAMPS ELASTIQUES DES DEFAUTS PONCTUELS SUR LA MOBILITE DES DISLOCATIONS DANS LE RELIEF CRISTALLINPETUKHOV BV; SUKHAREV V YA.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 4; PP. 1093-1096; BIBL. 6 REF.Article

ROLE DES IMPURETES DANS LA PRODUCTION D'AMAS DE DEFAUTS PONCTUELS DANS LES METAUX IRRADIESPECHENKIN VA; KONOVEEV YU V.1980; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1980; VOL. 50; NO 11; PP. 2442-2450; BIBL. 13 REF.Article

A NUMERICAL SOLUTION TO THE FOKKER-PLANCK EQUATION DESCRIBING THE EVOLUTION OF THE INTERSTITIAL LOOP MICROSTRUCTURE DURING IRRADIATIONGHONIEM NM; SHARAFAT S.1980; J. NUCL. MATER.; ISSN 0022-3115; NLD; DA. 1980; VOL. 92; NO 1; PP. 121-135; BIBL. 28 REF.Article

HIGH-RESOLUTION DIFFUSE X-RAY SCATTERING STUDY FROM NEARLY PERFECT SILICON SINGLE CRYSTALSKRISHAN LAL; BHANU PRATAP SINGH; AJITRAMVERMA et al.1979; ACTA CRYSTALLOGR., A; DNK; DA. 1979; VOL. 35; NO 2; PP. 286-295; BIBL. 29 REF.Article

THE CONFIGURATIONAL ENTROPY OF DEFECT COMPLEXES IN UO_2+XMITRA SK; ALLNATT AR.1979; J. PHYS. C; GBR; DA. 1979; VOL. 12; NO 12; PP. 2261-2275; BIBL. 24 REF.Article

CHARACTERIZATION OF POINT-DEFECT CLUSTERS BY 2-1/2-D TEMMITCHELL JB; BELL WL.1976; ACTA METALLURG.; E.U.; DA. 1976; VOL. 24; NO 2; PP. 147-152; ABS. FR. ALLEM.; BIBL. 10 REF.Article