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A Scalable Electrothermal Model for Transient Self-Heating Effects in Trench-Isolated SiGe HBTsAMIT KUMAR SAHOO; FREGONESE, Sébastien; WEISS, Mario et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 10, pp 2619-2625, issn 0018-9383, 7 p.Article

80 ns/45 GHz Pulsed measurement system for DC and RF characterization of high speed microwave devicesWEISS, Mario; FREGONESE, Sébastien; SANTORELLI, Marco et al.Solid-state electronics. 2013, Vol 84, pp 74-82, issn 0038-1101, 9 p.Conference Paper

Optimized Ring Oscillator With 1.65-ps Gate Delay in a SiGe:C HBT TechnologyWEISS, Mario; MAJEK, Cedric; AMIT KUMAR SAHOO et al.IEEE electron device letters. 2013, Vol 34, Num 10, pp 1214-1216, issn 0741-3106, 3 p.Article

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