ON AMORPHOUS LAYER FORMATION IN SILICON BY ION IMPLANTATION.BOURGOIN JC; MORHANGE JF; BESERMAN R et al.1974; RAD. EFFECTS; G.B.; DA. 1974; VOL. 22; NO 3; PP. 205-208; BIBL. 17 REF.Article

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INVESTIGATION OF THE AMORPHIZATION PROCESS IN CRYSTALLINE BORON.TSOMAYA KP; SAMSONOV GV; TAVADZE FN et al.1976; J. LESS COMMON METALS; NETHERL.; DA. 1976; VOL. 47; PP. 249-254; BIBL. 17 REF.; (INT. SYMP. BORON BORIDES. 5. PROC.; BORDEAUX; 1975)Conference Paper

PREPARATION OF PURE GLASSY GERMANIUM.VUCIC Z; ETLINGER B; KUNSTELJ D et al.1976; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1976; VOL. 20; NO 3; PP. 451-454; BIBL. 10 REF.Article

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DIE KRISTALLISATIONSGESCHWINDIGKEIT DES BESTRAHLTEN GLASIGEN SELENS = THE CRYSTALLIZATION RATE OF IRRADIATED GLASSY SELENIUMSWIATKOWSKI W.1981; J. PHYS. CHEM. SOLIDS; GBR; DA. 1981-08; VOL. 42; NO 8; PP. 713-714; BIBL. 18 REF.Article

THEORY OF FREEZING OF ALKALI HALIDES AND BINARY ALLOYSMARCH NH; TOSI MP.1981; PHYS. CHEM. LIQ.; ISSN 0031-9104; USA; DA. 1981; VOL. 11; NO 1; PP. 79-87; BIBL. 11 REF.Article

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