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A NEW AMORPHOUS SILICON-BASED ALLOY FOR ELECTRONIC APPLICATIONSOVSHINSKY SR; MADAN A.1978; NATURE; GBR; DA. 1978; VOL. 276; NO 5687; PP. 482-484; BIBL. 16 REF.Article

ORIGIN OF AMORPHOUS INTERSTELLAR GRAINSSEKI J; HASEGAWA H.1981; PROG. THEOR. PHYS.; ISSN 0033-068X; JPN; DA. 1981; VOL. 66; NO 3; PP. 903-912; BIBL. 22 REF.Article

BIPOLAR THRESHOLD SWITCHING IN VANADATE GLASSESDIMITRIEV Y; GATTEF E; ENEVA A et al.1981; INT. J. ELECTRON. THEOR. EXP.; ISSN 0020-7217; GBR; DA. 1981; VOL. 50; NO 5; PP. 385-394; BIBL. 2 P.Article

MODIFICATIONS DE STRUCTURE DANS LES VERRES CHALCOGENES SEMICONDUCTEURS DU SYSTEME SI-TE ET LEUR RELATION AVEC L'EFFET DE MEMOIREALTUNYAN SA; MINAEV VS.1977; IZVEST. AKAD. NAUK ARM. S.S.R., FIZ.; S.S.S.R.; DA. 1977; VOL. 12; NO 5; PP. 378-382; ABS. ARM. ANGL.; BIBL. 8 REF.Article

FORTSCHRITTE UND ENTWICKLUNGSTENDENZEN IN DER TROCKNUNGSTECHNIK BEI DER TROCKNUNG FORMLOSER GUETER. = PROGRESS AND DEVELOPMENT TRENDS IN THE DRYING TECHNIQUE OF AMORPHOUS MATERIALS = PROGRES ET TENDANCES DE DEVELOPPEMENT DANS LA TECHNIQUE DU SECHAGE DES MATIERES AMORPHESSTOCKBURGER D.1975; V.D.I. BER.; DTSCH.; DA. 1975 PARU 1976; NO 260; PP. 41-47; BIBL. 6 REF.Article

NUCLEATION THEORY OF THRESHOLD SWITCHING IN VANADATE-GLASS DEVICESGATTEF E; DIMITRIEV Y.1981; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1981; VOL. 43; NO 2; PP. 333-343; BIBL. 34 REF.Article

SCHALTMECHANISMEN AMORPHER SILBERMETAPHOSPHAT-SPEICHERELEMENTE MIT NIEDRIGER SCHALTFELDSTAERKE = MECANISMES DE COMMUTATION D'ELEMENTS DE MEMOIRE AU METAPHOSPHATE D'ARGENT AMORPHE SOUS L'ACTION DE CHAMPS FAIBLESKAES HH; HERWIG H.1978; SCI. ELECTR.; CHE; DA. 1978; VOL. 24; NO 4; PP. 124-135; ABS. ENG; BIBL. 22 REF.Article

THRESHOLD VOLTAGE CONTROL METHOD FOR AMORPHOUS SWITCHES.HOLLAND PA; HUGHES AJ.1977; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1977; VOL. 23; NO 3; PP. 305-314; BIBL. 5 REF.Article

MECANISME DU PHENOMENE DE MEMOIRE DANS LES MATERIAUX AMORPHES EVAPORESFUKUZAWA M; SAKAMOTO N.1977; OYO BUTURI; JAP.; DA. 1977; VOL. 46; NO 7; PP. 690-694; ABS. ANGL.; BIBL. 15 REF.Article

EFFET DE PHOTOENREGISTREMENT POSITIF SUR DES COUCHES DE SEMICONDUCTEURS VITREUX CHALCOGENURESTURYANITSA II; KIKINESHI AA; SEMAK DG et al.1979; UKRAIN. FIZ. ZH.; UKR; DA. 1979; VOL. 24; NO 4; PP. 534-537; ABS. ENG; BIBL. 11 REF.Article

MIS DIODES ON AMORPHOUS SILICON.WILSON JIB; ROBINSON P.1978; SOLID-STATE ELECTRON.; G.B.; DA. 1978; VOL. 21; NO 2; PP. 489-491; BIBL. 9 REF.Article

THE SWITCHING MECHANISMS IN AMORPHOUS CHALCOGENIDE MEMORY DEVICES.STEVENTON AG.1976; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1976; VOL. 21; NO 3; PP. 319-329; BIBL. 13 REF.Article

ANOMALOUS TEMPERATURE DEPENDENCE OBSERVED ON THE PHOTOVOLTAGE OF SE-BASED AMORPHOUS THIN FILM-SNO2 HETEROSTRUCTURES.TRAN TRI NANG; OKUDA M; MATSUSHITA T et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 8; PP. 489-490; BIBL. 5 REF.Article

AMORPHOUS INTERSTELLAR GRAINS: WAVELENGTH DEPENDENCE OF FAR-INFRARED EMISSION EFFICIENCYSEKI J; YAMAMOTO T.1980; ASTROPHYS. SPACE SCI.; ISSN 0004-640X; NLD; DA. 1980; VOL. 72; NO 1; PP. 79-86; BIBL. 26 REF.Article

A DRY-ETCHED INORGANIC RESISTCHANG MS; CHEN JT.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 10; PP. 892-895; BIBL. 17 REF.Article

METALLIC GLASSES: A MAGNETIC ALTERNATIVERASKIN D; DAVIS LA.1981; IEEE SPECTRUM; ISSN 0018-9235; USA; DA. 1981; VOL. 18; NO 11; PP. 28-33Article

AMORPHER HALBLEITERSPEICHERWERKSTOFF NIEDRIGER SCHALTFELDSTAERKE. = MEMOIRE A MATERIAU SEMICONDUCTEUR AMORPHE A CHAMP DE COMMUTATION DE FAIBLE INTENSITEKAS HH.1977; NATURWISSENSCHAFTEN; DTSCH.; DA. 1977; VOL. 64; NO 8; PP. 434-435; BIBL. 4 REF.Article

LA COMMUTATION DANS DES COUCHES MINCES DE VERRE TYPE CHALCOGENURE A ELECTRODES SEMICONDUCTRICESGURIN NT; SEMAK DG.1977; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1977; VOL. 22; NO 10; PP. 2162-2168; BIBL. 29 REF.Article

MECANISME DE MAINTIEN DE L'ETAT ENCLENCHE DANS LES COMMUTATEURS A SEUILGURIN NT; SEMAK DG.1977; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1977; VOL. 20; NO 5; PP. 80-85; BIBL. 26 REF.Article

PROPRIETES DES DISPOSITIFS DE STOCKAGE DES MEMOIRES SEMICONDUCTRICES PERMANENTES A REPROGRAMMATION A BASE DE COMMUTATEURS AMORPHESUSOV NN; ANDREEVA TA; BAGDASAR'YANTS EH I et al.1977; MIKROELEKTRONIKA; S.S.S.R.; DA. 1977; VOL. 6; NO 4; PP. 307-315; BIBL. 24 REF.Article

SUBNANOSECOND ELECTRICAL MODULATION OF LIGHT WITH HYDROGENATED AMORPHOUS SILICONPHELAN RJ JR; LARSON DR; WERNER PE et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 8; PP. 596-598; BIBL. 17 REF.Article

EXISTENCE AND ROLE OF AMORPHOUS GRAINS IN THE SOLAR SYSTEMSMOLUCHOWSKI R.1980; SYMP.-INT. ASTRON. UNION; ISSN 0074-1809; NLD; DA. 1980; NO 90; PP. 381-384; BIBL. 19 REF.Conference Paper

DOPAGE LOCAL ET EFFET DE MEMOIRE DANS LES CHALCOGENURES VITREUX SEMICONDUCTEURSKOLOMIETS BT; KALMYKOVA NP; LEBEDEV EH A et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 4; PP. 726-730; BIBL. 5 REF.Article

THE ROLE OF AMORPHOUS MATERIALS IN THE MAGNETICS INDUSTRYLUBORSKY FE; FRISCHMANN PG; JOHNSON LA et al.1978; J. MAGNET. MAGNET. MATER.; NLD; DA. 1978; VOL. 8; NO 4; PP. 318-329; BIBL. 49 REF.Article

PRORPIETES DE DIODES A INSTABILITE ELECTROTHERMIQUE DANS LE CANAL DE COMMUTATIONSUKHANOV AA.1978; MIKROELEKTRONIKA; SUN; DA. 1978; VOL. 7; NO 5; PP. 455-462; BIBL. 16 REF.Article

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