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THEORY OF A NEW THREE-TERMINAL MICROWAVE POWER AMPLIFIER.SE PUAN YU; TANTRAPORN W; ESHBACH JR et al.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 3; PP. 332-343; BIBL. 13 REF.Article

FREQUENCY RESPONSE OF SINGLE AND MULTI STAGE TRANSISTOR AMPLIFIERS - A SIMPLE METHOD OF OBTAINING CLOSED FORM SOLUTIONS.DAS MB; FARROKH H.1975; INTERNATION. J. ELECTRON.; G.B.; DA. 1975; VOL. 38; NO 5; PP. 657-662; BIBL. 5 REF.Article

THE VIABLE TUNNEL-DIODE AMPLIFIER.CHASEK N.1975; MICROWAVE J.; U.S.A.; DA. 1975; VOL. 18; NO 2; PP. 63-65Article

BIAS-TUNED DOUBLE-DRIFT IMPATT DIODES FOR WIDE-BANDWIDTH OPERATION.YING RS; LEE DH.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 15; PP. 345-346; BIBL. 5 REF.Article

SILICON IMPATT CASCADED AMPLIFIER: 6W (C.W.) AT 9.6 GHZ.BRADDOCK PW; HODGES RD; GENNER R et al.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 25-26; PP. 538-540Article

PERTURBATION THEORY FOR MULTISTRIP ACOUSTOELECTRIC SURFACE-WAVE AMPLIFIERMAERFELD C; TOURNOIS P.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 5; PP. 113-115; BIBL. 5 REF.Serial Issue

TRAVELLING-WAVE AMPLIFICATION BY INTERACTION WITH A CURRENT IN A SEMICONDUCTOR.THIENNOT J.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 9; PP. 3925-3933; BIBL. 24 REF.Article

R-C COUPLING IN AUDIO CIRCUITS.HOROWITZ M.1974; RADIO ELECTRON.; U.S.A.; DA. 1974; VOL. 45; NO 10; PP. 42-45Article

COUPLED MODE ANALYSIS FOR SOLID TRAVELLING-WAVE AMPLIFIERSLEFEUVRE S; HANNA VF.1973; INTERNATION. J. ELECTRON.; G.B.; DA. 1973; VOL. 35; NO 2; PP. 145-162; BIBL. 15 REF.Serial Issue

S-BAND TUNNEL DIODE AMPLIFIER.SHARMA ML.1973; J. INSTIT. ELECTRON. TELECOMMUNC. ENGRS; INDIA; DA. 1973; VOL. 19; NO 10; PP. 545-548; BIBL. 4 REF.Article

TWO-DIMENSIONAL LAYERED ANALYSIS OF A SURFACE ELASTIC WAVE AMPLIFIER HAVING A SEGMENTED DRIFT STRUCTURETZU HWA HSU; WHITE RM.1973; I.E.E.E. TRANS. SONICS ULTRASON.; U.S.A.; DA. 1973; VOL. 20; NO 1; PP. 2-6; BIBL. 8 REF.Serial Issue

DESIGN TECHNIQUE FOR MICROWAVE-TRANSISTOR POWER AMPLIFIERS.KOTZEBUE KL.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 3; PP. 74-75; BIBL. 4 REF.Article

DISPOSITIFS FAISCEAU ELECTRON SEMICONDUCTEURNIO K.1976; OYO BUTURI; JAP.; DA. 1976; VOL. 45; NO 7; PP. 672-678; BIBL. 17 REF.Article

PHENOMENES D'HYSTERESIS DANS LES AMPLIFICATEURS DE PUISSANCE A TRANSISTORSVORONETSKIJ EV; CHELNOKOV OA; SHIRMAN YA SH et al.1975; RADIOTEKHNIKA; S.S.S.R.; DA. 1975; VOL. 30; NO 5; PP. 67-75; BIBL. 13 REF.Article

GAIN STABILIZATION USING NONLINEAR CIRCUIT ELEMENTS.SHARMA RS; HANJURA AK.1974; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1974; VOL. 20; NO 3-4; PP. 129-132; BIBL. 5 REF.Article

ZUR MODULIERBARKEIT VON IMPATT-DIODEN-VERSTAERKERN. = SUR LA POSSIBILITE DE MODULER DES AMPLIFICATEURS A DIODES IMPATTLANDSTORFER F; HELLER M.1974; NACHR.-TECH. Z.; DTSCH.; DA. 1974; VOL. 27; NO 9; PP. 356-358; ABS. ANGL.; BIBL. 5 REF.Article

ETUDE EN TEMPS DES SYSTEMES REGENERATIFS NON LINEAIRES A ELEMENTS A PARAMETRES LOCALISES A L'AIDE D'UNE CALCULATRICEKHOTUNTSEV YU L; TAMARCHAK D YA; MARKOV YU I et al.1975; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1975; VOL. 18; NO 12; PP. 108-111; BIBL. 3 REF.Article

COMMANDE AUTOMATIQUE DU GRAIN DANS DES AMPLIFICATEURS SEMICONDUCTEURS CONSTITUES PAR DES TRANSISTORS BIPOLAIRESLENKOWSKA M.1974; ZESZ. NAUK. POLITECH. GDANSK., ELEKTRON.; POLSKA; DA. 1974; NO 32; PP. 37-66; ABS. ANGL. RUSSE; BIBL. 12 REF.Article

HIGH-POWER WIDE-BANDWIDTH TRAPATT CIRCUITS.CLORFEINE AS; ROSEN A; REYNOLDS JF et al.1975; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1975; VOL. 10; NO 1; PP. 27-31; BIBL. 8 REF.Article

EVOLUTION OF PULSES IN PARAMETRIC WAVE INTERACTIONS UTILIZED IN THE INITIAL-VALUE MODECASSEDY ES; EVANS CR.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 11; PP. 4452-4460; BIBL. 18 REF.Serial Issue

POWER GENERATION AND EFFICIENCY IN GAAS TRAVELING-WAVE AMPLIFIERS.GIANNINI F; SALSANO A.1975; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1975; VOL. 23; NO 5; PP. 449-452; BIBL. 8 REF.Article

SMALL-SIGNAL SIMULATION OF IMPATT DIODE AMPLIFIERS.CHRISTIE J; STEWART JAC.1975; INTERNATION. J. ELECTRON.; G.B.; DA. 1975; VOL. 39; NO 1; PP. 61-73; BIBL. 13 REF.Article

MICROWAVE VARIABLE-GAIN AMPLIFIER WITH DUAL-GATE GAAS FET.MAEDA M; MINAI Y.1974; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1974; VOL. 22; NO 12, PART. 2; PP. 1226-1230; BIBL. 5 REF.Article

PARAMETRIC AMPLIFICATION OF ACOUSTIC SURFACE WAVES OU CD S.BASTIDE G; SAGNES G; ROUZEYRE M et al.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 21; PP. 442-443; BIBL. 3 REF.Article

LES CARACTERISTIQUES DE MODULATION DES ELEMENTS ACTIFS PARADIELECTRIQUES A BASSE TALFEEV VN; KOVAL'KOV YU N; NARYTNIK TN et al.1974; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1974; VOL. 19; NO 4; PP. 751-756; BIBL. 11 REF.Article

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