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AN INVESTIGATION INTO THE POSSIBLE USE OF THE NUCLEAR MICROPROBE FOR THE EXAMINATION OF SURFACE TOPOGRAPHY.OLIVIER C; PIERCE TB.1975; J. RADIOANAL. CHEM.; NETHERL.; DA. 1975; VOL. 24; NO 1; PP. 21-29; BIBL. 4 REF.Article

L'ETUDE DES SURFACES SOLIDES PAR DIFFUSION D'IONS LENTS (LEIS).DELANNAY F; BERTRAND P; STREYDIO VM et al.1974; REV. ENERG. PRIM.; BELG.; DA. 1974; VOL. 10; NO 3-4; PP. 102-113; ABS. NEERL. ANGL. ALLEM.; BIBL. 35 REF.Article

ETUDE DE LA STRUCTURE DE SURFACE DES MONOCRISTAUX D'APRES DES PARTICULES DIFFUSEESLABZYIN VG; SKRIPKA YU G.1974; DOP. AKAD. NAUK U.R.S.R., A; S.S.S.R.; DA. 1974; VOL. 36; NO 10; PP. 935-938; ABS. ANGL. RUSSE; BIBL. 8 REF.Article

THE ANALYSIS OF FORWARD SCATTERING CHANNELING DATA.BERLINER R; KOEHLER JS.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 28; NO 3-4; PP. 141-145; BIBL. 10 REF.Article

POLYATOMIC-ION IMPLANTATION DAMAGE IN SILICON.DAVIES JA; FOTI G; HOWE LM et al.1975; PHYS. REV. LETTERS; U.S.A.; DA. 1975; VOL. 34; NO 23; PP. 1441-1444; BIBL. 12 REF.Article

INELASTIC SCATTERING IN SLOW-ION SURFACE-CHANNELING AND SURFACE DEBYE TEMPERATURE.WAHO T; KITAGAWA M; OHTSUKI YH et al.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 11; PP. 4568-4571; BIBL. 7 REF.Article

SEGREGATION INTERGRANULAIRE DES ELEMENTS DE LA FAMILLE DU SOUFRE DANS LE FER PUR.PICHARD C; GUTTMANN M; RIEU J et al.1975; J. PHYS., COLLOQ.; FR.; DA. 1975; VOL. 36; NO 4; PP. C4.151-C4.155; ABS. ANGL.; BIBL. 18 REF.; (COLLOQ. INT. JOINTS INTERGRANULAIRES METAUX; SAINT-ETIENNE; 1975)Conference Paper

LA MICROANALYSE PAR UNE TECHNIQUE DE RETRODIFFUSIONTSUKAMOTO K; AKASAKA Y; KORIE K et al.1975; J. VACUUM SOC. JAP.; JAP.; DA. 1975; VOL. 18; NO 1; PP. 15-22; ABS. ANGL.; BIBL. 14 REF.Article

ELECTRICAL AND BACKSCATTERING MEASUREMENTS OF ARSENIC IMPLANTED SILICON.MULLER H; KRANZ H; RYSSEL H et al.1974; APPL. PHYS.; GERM.; DA. 1974; VOL. 4; NO 2; PP. 115-123; BIBL. 25 REF.Article

DETECTION OF LOW-MASS IMPURITIES IN THIN FILMS USING MEV HEAVY-ION ELASTIC SCATTERING AND COINCIDENCE DETECTION TECHNIQUES.MOORE JA; MITCHELL IV; HOLLIS MJ et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 1; PP. 52-61; BIBL. 6 REF.Article

ANGULAR DEPENDENCE OF THE BACKSCATTERING YIELD FROM SCI CRYSTALS IN DOUBLE AND SINGLE ALIGNMENT.MORITA K.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 28; NO 1-2; PP. 65-75; BIBL. 20 REF.Article

EDGE ATOM DEPRESSION ON STEPPED CU(410)ALGRA AJ; LUITJENS SB; SUURMEIJER EPTM et al.1980; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1980; PP. 496-498; BIBL. 15 REF.Article

SAMPLE CONTAMINATION CAUSED BY SPUTTERING DURING ION IMPLANTATIONHEMMENT PLF.1979; VACUUM; ISSN 0042-207X; GBR; DA. 1979; VOL. 29; NO 11-12; PP. 439-442; BIBL. 12 REF.Article

DISTRIBUTION ACCROSS THE CHANNEL OF DEFECTS INDUCED BY NITROGEN BOMBARDMENT IN SILICON.BAERI P; CAMPISANO SU; CIAVOLA G et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 1; PP. 9-11; BIBL. 14 REF.Article

BACKSCATTERING STUDY AND THEORETICAL INVESTIGATION OF PLANAR CHANNELING PROCESSES. I. EXPERIMENTAL RESULTSABEL F; AMSEL G; BRUNEAUX M et al.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO NO 11; PP. 4617-4627; BIBL. 26 REF.Article

STRUCTURAL STUDIES OF THE RECONSTRUCTED W(001) SURFACE WITH MEV ION SCATTERINGFELDMAN LC; SILVERMAN PJ; STENSGAARD I et al.1979; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1979; VOL. 87; NO 2; PP. 410-414; BIBL. 8 REF.Article

RADIATION DAMAGE IN SILICON PRODUCED BY PHOSPHORUS IMPLANTATION: RANDOM AND ALIGNED IMPLANTS.CEMBALL F; DORI L; GALLONI R et al.1978; RAD. EFFECTS; G.B.; DA. 1978; VOL. 36; NO 1-2; PP. 111-117; BIBL. 16 REF.Article

HIGH ENERGY ION SCATTERING AS A TOOL FOR STUDYING ION IMPLANTATION.VAN DER WEG WF; TAMMINGA Y.1976; ACTA ELECTRON.; FR.; DA. 1976; VOL. 19; NO 1; PP. 47-52; ABS. FR.; BIBL. 10 REF.Article

THE MODIFICATION OF SURFACE LAYERS BY ION IMPLANTATION.GRANT WA; WILLIAMS JS.1976; SCI. PROGR.; G.B.; DA. 1976; VOL. 63; NO 249; PP. 27-64; BIBL. 2 P. 1/2Article

APPLICATION DE LA RETRODIFFUSION D'IONS HE+ CANALISES A L'ETUDE DES SURFACES APRES ATTAQUE IONIQUE.JOUBERT P; BERTHOU L; GUIVARC'H A et al.1975; VIDE; FR.; DA. 1975; VOL. 30; NO 180; PP. 210-213; ABS. ANGL.; BIBL. 12 REF.Article

DETERMINATION DE LA LOCALISATION DES ATOMES LEGERS DANS LES CRISTAUX PAR DIFFUSION ANORMALE DE PARTICULES ALPHA .CHERNOV IP; TIMOSHNIKOV YU A; KRYUCHKOV YU YU et al.1978; ATOM. ENERG.; SUN; DA. 1978; VOL. 44; NO 6; PP. 515-516; BIBL. 3 REF.Article

NITROGEN CENTERS IN GAP PRODUCED BY HOT IMPLANTATION.SHIMADA T; SHIRAKI Y; KOMATSUBARA KF et al.1976; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1976; VOL. 37; NO 3; PP. 315-319; BIBL. 8 REF.Article

VISIBLE INTERFERENCE EFFECTS IN SILICON CAUSED BY HIGH-CURRENT-HIGH-DOSE IMPLANTATION.SEIDEL TE; PASTEUR GA; TSAI JCC et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 10; PP. 648-651; BIBL. 16 REF.Article

METHODES ACTUELLES D'ANALYSE DES SOLIDES. COLLOQUE. EXPOSES ET COMMUNICATIONS; DIJON; 1975.1976; REV. PHYS. APPL.; FR.; DA. 1976; VOL. 11; NO 1; PP. 1-193; BIBL. DISSEM.Conference Paper

ANALYSIS OF THIN FILMS ON GLASS BY NUCLEAR TECHNIQUES.GOTTARDI V; RACCANELLI A; DELLA MEA G et al.1976; GLASS TECHNOL.; G.B.; DA. 1976; VOL. 17; NO 1; PP. 26-30; ABS. FR. ALLEM.; BIBL. 6 REF.Article

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