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THE MEASUREMENT OF PB+ ION COLLECTION IN SI BY HIGH DEPTH-RESOLUTION RUTHERFORD BACKSCATTERING.WILLIAMS JS.1975; PHYS. LETTERS, A; NETHERL.; DA. 1975; VOL. 51; NO 2; PP. 85-86; BIBL. 6 REF.Article

TRANSMISSION SPUTTERING AS A TECHNIQUE FOR MEASURING THE DISTRIBUTION OF ENERGY DEPOSITED IN SOLIDES BY ION BOMBARDMENT.BAY HL; ANDERSEN HH; HOFER WO et al.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 28; NO 1-2; PP. 87-95; BIBL. 38 REF.Article

RANGE PARAMETER DISTORTION IN HEAVY ION IMPLANTATION.BLANK P; WITTMAACK K.1975; PHYS. LETTERS, A; NETHERL.; DA. 1975; VOL. 54; NO 1; PP. 33-34; BIBL. 16 REF.Article

UTILISATION DE LA RETRODIFFUSION D'IONS DE MOYENNE ENERGIE POUR LA DETERMINATION DE COMPOSITIONS ET DE STRUCTURES CRISTALLINES DE SURFACE.COHEN C.1977; VIDE; FR.; DA. 1977; NO 189; PP. 135-138; ABS. ANGL.; BIBL. 7 REF.Article

KINETICS AND MECHANISM OF PLATINUM SILICIDE FORMATION ON SILICON.POATE JM; TISONE TC.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 8; PP. 391-393; BIBL. 14 REF.Article

COMBINED ION IMPLANTATION-ANALYSIS SAMPLE CHAMBER.PETERSON GD; EERNISSE EP.1976; REV. SCI. INSTRUM.; U.S.A.; DA. 1976; VOL. 47; NO 9; PP. 1153-1156; BIBL. 3 REF.Article

THE CHARACTERIZATION OF GAAS SURFACES.WOOD DR; MORGAN DV.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 6; PP. 773-777; BIBL. 15 REF.Article

EFFECT OF PLANAR OSCILLATIONS ON IMPLANTED DISTRIBUTIONS MEASURED BY LOW-ANGLE HE+ BACKSCATTERING.WAGH AG; WILLIAMS JS.1978; PHYS. LETTERS, A; NETHERL.; DA. 1978; VOL. 65; NO 2; PP. 175-176; BIBL. 8 REF.Article

SAMPLE CONTAMINATION CAUSED BY SPUTTERING DURING ION IMPLANTATIONHEMMENT PLF.1979; VACUUM; ISSN 0042-207X; GBR; DA. 1979; VOL. 29; NO 11-12; PP. 439-442; BIBL. 12 REF.Article

RUTHERFORD BACKSCATTERING INVESTIGATION OF THERMALLY OXIDIZED TANTALUM ON SILICON.HIRVONEN J; REVESZ AG; KIRKENDALL TD et al.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 33; NO 3; PP. 315-322; BIBL. 7 REF.Article

CHANNELING OF HIGH-ENERGY PROTONS IN SI AND W.ACERBI E; BIRATTARI C; CANDONI B et al.1975; NUOVO CIMENTO, B; ITAL.; DA. 1975; VOL. 29; NO 2; PP. 257-269; ABS. ITAL. RUSSE; BIBL. 33 REF.Article

DOES BACKSCATTERING OF 4HE IONS BY NUCLEI OBEY THE RUTHERFORD CROSS-SECTION FORMULA.ZIEGLER JF; BAGLIN JEE.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 4; PP. 1888-1890; BIBL. 10 REF.Article

THE DEPENDENCE OF ANGULAR WIDTH PSI 1/2 OF THE AXIAL DIP ON THE DEPTH OF PARTICLE PENETRATION INTO CRYSTAL.KUMAKHOV MA; MURALEV VA; RUDNEV AS et al.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 24; NO 4; PP. 273-275; BIBL. 9 REF.Article

REALISATION DE MONOCRISTAUX MINCES PAR EPITAXIE ET ETUDE DE LEUR QUALITE PAR DIFFUSION DE RUTHERFORD EN GEOMETRIE DE CANALISATION.KIRSCH R.1975; ; S.L.; DA. 1975; PP. (63P.); BIBL. 2 P.; (THESE DOCT. UNIV., MENTION SCI. PHYS.; CLAUDE BERNARD LYON)Thesis

SUBTRACTION OF SIGNAL OVERLAPS IN RUTHERFORD BACKSCATTERING SPECTROMETRYLIAU ZL.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 1; PP. 51-53; BIBL. 4 REF.Article

LOCATION OF SELF-INTERSTITIAL ATOMS IN BORON-IMPLANTED SILICON BY MEANS OF RUTHERFORD BACKSCATTERING OF CHANNELLED IONSGOETZ G; SOMMER G.1979; RAD. EFFECTS; GBR; DA. 1979; VOL. 41; NO 4; PP. 195-202; BIBL. 21 REF.Article

RE-SPUTTERING AND IMPLANTING SPUTTERED ATOMS DURING DEPOSITIONMCCULLOCH D; GRUSELL E; HOLLAND L et al.1979; NUCL. INSTRUM. METHODS; NLD; DA. 1979; VOL. 165; NO 2; PP. 283-287; BIBL. 8 REF.Article

REFRACTIVE INDEX PROFILES AND RANGE DISTRIBUTIONS OF SILICON IMPLANTED WITH HIGH-ENERGY NITROGENHUBLER GK; MALMBERG PR; SMITH TP III et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 7147-7155; BIBL. 35 REF.Article

CHANNELING AND RHEED ANALYSES OF PB-IMPLANTATION IN SILICON.CAMPISANO SU; CIAVOLA G; VITALI G et al.1978; APPL. PHYS.; GERM.; DA. 1978; VOL. 15; NO 2; PP. 233-237; BIBL. 9 REF.Article

THE FORMATION OF NISI FROM NI2SI STUDIED WITH A PLATINUM MARKERFINSTAD TG; MAYER JW; NICOLET MA et al.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 51; NO 3; PP. 391-394; BIBL. 11 REF.Article

LASER ANNEALING OF ARSENIC IMPLANTES SILICON.KRYNICKI J; SUSKI J; UGNIEWSKI S et al.1977; PHYS. LETTERS, A; NETHERL.; DA. 1977; VOL. 61; NO 3; PP. 181-182; BIBL. 9 REF.Article

INVESTIGATION OF THE STRUCTURE OF AU(110) USING ANGLE RESOLVED LOW ENERGY K+ ION BACKSCATTERINGOVERBURY SH; HEILAND W; ZEHNER DM et al.1981; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1981; VOL. 109; NO 1; PP. 239-262; BIBL. 25 REF.Article

EFFECTS OF LASER IRRADIATION ON PHOSPHORUS DIFFUSED LAYERS IN SILICONFOGARASSY E; STUCK R; MULLER JC et al.1980; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1980; VOL. 9; NO 1; PP. 197-209; BIBL. 14 REF.Article

ANOTHER EVIDENCE FOR YIELD ENHANCEMENT OF 180O SCATTERING ON SOLID TARGETS. DISCUSSION AND APPLICATION TO THE CHANNELING CASEKIRSCH RG; POIZAT JC.1980; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1980; VOL. 76; NO 5-6; PP. 437-440; BIBL. 5 REF.Article

REGROWTH BEHAVIOUR OF GE IMPLANTED (100) SIREVESZ P; MAYER JW.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 54; NO 2; PP. 513-516; ABS. RUS; BIBL. 12 REF.Article

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