ENERGY LOSS OF 1000 KEV ELECTRONS IN THIN SILICON CRYSTALLS AS MEASURED BU HIGH VOLTAGE ELECTRON MICROSCOPY.DOI K; IZUI K; OHTSU H et al.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 26; NO 3; PP. 129-133; BIBL. 9 REF.Article

FORMATION OF HELICAL DISLOCATIONS IN PURE NIOBIUM SINGLE CRYSTALS UNDER ELECTRON IRRADIATION.LOUCHET F; KUBIN LP.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 26; NO 1-2; PP. 67-69; BIBL. 9 REF.Article

DEFAUTS DE STRUCTURE DANS UN MONOCRISTAL DE SELENIURE DE ZINC.RIVAUD G; PAVIS B; LEMERCIER M et al.1974; J. MICR.; FR.; DA. 1974; VOL. 19; NO 2; PP. 113-118; H.T. 2; ABS. ANGL.; BIBL. 17 REF.Article

CONTRAST AND RESOLUTION OF SMALL DISLOCATION LOOPS IN HIGH-VOLTAGE ELECTRON MICROSCOPY.CHEN LJ; SESHAN K; THOMAS G et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 28; NO 1; PP. 309-319; ABS. ALLEM.; BIBL. 14 REF.Article

LATTICE IMAGE OF NB₁₂O₂₉ OBSERVED BY A 1000-KV ELECTRON MICROSCOPE.HORIUCHI S; MURAMATSU K; UCHIDA Y et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 7; PP. 3199-3200; BIBL. 11 REF.Article

ETUDE AU MICROSCOPE ELECTRONIQUE DES PHENOMENES DE TRANSITION DE PHASES DANS DES MONOCRISTAUX D'OXYDE V₂O₃ PUR ET DOPE AU CHROME.LAUNAY JC; POUCHARD M; AYROLES R et al.1975; MATER. RES. BULL.; U.S.A.; DA. 1975; VOL. 10; NO 6; PP. 559-564; ABS. ANGL.; BIBL. 1 REF.Article

THE ELECTRON IRRADIATION INDUCED CORROSION OF SILICON.FLOWER HM; SWANN PR.1977; CORROS. SCI.; G.B.; DA. 1977; VOL. 17; NO 4; PP. 305-315; BIBL. 11 REF.Article

BEHAVIOR OF DISLOCATION IN COPPER UNDER REVERSE STRESS.MORI H; FUJITA H.1975; J. PHYS. SOC. JAP.; JAP.; DA. 1975; VOL. 38; NO 5; PP. 1349-1356; BIBL. 17 REF.Article

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DISLOCATION NETWORKS AND LOOPS IN DEFORMED ZINCTAPETADO EG; SMALLMAN RE; LORETTO MH et al.1974; CRYST. LATTICE DEFECTS; G.B.; DA. 1974; VOL. 5; NO 3-4; PP. 199-202; BIBL. 6 REF.Article

ELECTRONMICROSCOPIC EVIDENCE FOR A COLUMNAR-VOID-TYPE STRUCTURE IN SPUTTERED NBN FILMS.WAGNER W; AST D; GAVALER JR et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 1; PP. 465-466; BIBL. 7 REF.Article

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APPLICATIONS OF MANY BEAM SYSTEMATIC DIFFRACTION CONTRAST IN HIGH VOLTAGE TRANSMISSION ELECTRON MICROSCOPY.CHEN LJ; THOMAS G.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 25; NO 1; PP. 193-204; ABS. ALLEM.; BIBL. 26 REF.Article

COOPERATIVE GROWTH OF DISLOCATION LOOPS AND VOIDS UNDER ELECTRON IRRADIATION.KENIK E; MITCHELL TE.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 24; NO 3; PP. 155-160; BIBL. 22 REF.Article

GROWTH OF INTERSTITIAL TYPE DISLOCATION LOOPS AND VACANCY MOBILITY IN ELECTRON IRRADIATED METALSKIRITANI M; YOSHIDA N; TAKATA H et al.1975; J. PHYS. SOC. JAP.; JAP.; DA. 1975; VOL. 38; NO 6; PP. 1677-1686; BIBL. 14 REF.Article

ETUDE DES CONTRASTES EN MICROSCOPIE ELECTRONIQUE (DE 100 KEV A 1 MEV) DANS LE CAS DE LA POSITION SYMETRIQUE ET APPLICATIONSPARDO B; MARRAUD A; RENARD D et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 30; NO 2; PP. 577-586; ABS. ANGL.; BIBL. 18 REF.Article

INTERACTION D'ELECTRONS RAPIDES AVEC DES OBJETS AMORPHES OU POLYCRISTALLINS (ENERGIES COMPRISES ENTRE 50 ET 1200 KEV).ARNAL F.1975; AO-CNRS-11747; FR.; DA. 1975; PP. 1-139; BIBL. 2 P. 1/2; (THESE DOCT. SCI. PHYS.; PAUL SABATIER TOULOUSE)Thesis

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MOTION OF EXTENDED DISLOCATIONS IN SILICON CRYSTALS OBSERVED BY HVEMSATO M; SUMINO K.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 55; NO 1; PP. 297-306; ABS. GER; BIBL. 18 REF.Article

EFFECT OF ELECTRON-IRRADIATION ON DISLOCATION BEHAVIOUR IN NICKEL DURING IN SITU DEFORMATION EXPERIMENT IN HVEMSAKA H; NODA K; MATSUMOTO K et al.1975; SCRIPTA METALLURG.; E.U.; DA. 1975; VOL. 9; NO 5; PP. 499-504; BIBL. 12 REF.Article

ETUDE DE L'ANISOTROPIE DES DOMMAGES D'IRRADIATION DANS L'ACIER INOXYDABLE AUSTENITIQUE PAR LA METHODE DE MICROSCOPIE ELECTRONIQUE A HAUTE TENSIONNOVIKOV II; KANTOR MM; ZHARKOV VG et al.1981; DOKL. AKAD. NAUK SSSR; ISSN 0002-3264; SUN; DA. 1981; VOL. 256; NO 1; PP. 77-80; BIBL. 15 REF.Article

IN-SITU OBSERVATIONS OF DISLOCATION BEHAVIOUR DURING STRESS-CYCLING IN NICKEL BY HVEMSAKA H; NODA K; MATSUMOTO K et al.1976; SCRIPTA METALLURG.; E.U.; DA. 1976; VOL. 10; NO 1; PP. 29-36; BIBL. 5 REF.Article

FORMATION OF DISLOCATION STRUCTURE IN SILICON LAYERS ON NON-ORIENTING SUBSTRATES.MEYER S; ASEEV AL; KLIMENKO AG et al.1975; KRISTALL U. TECH.; DTSCH.; DA. 1975; VOL. 10; NO 3; PP. 247-257; ABS. RUSSE; BIBL. 23 REF.Article

IN-SITU OBSERVATIONS OF THE ANNEALING OF LIQUID LEAD INCLUSIONS ENTRAINED IN AN ALUMINIUM MATRIX.MCLEAN M; LOVEDAY MS.1974; J. MATER. SCI.; G.B.; DA. 1974; VOL. 9; NO 7; PP. 1104-1114; BIBL. 19 REF.Article

STRUCTURAL AND MECHANICAL STUDY IN CREEP IN AL₂O₄MG SINGLE CRYSTALS.DOUKHAN N; DUCLOS R; ESCAIG B et al.1973; J. PHYS., COLLOQ.; FR.; DA. 1973; VOL. 34; NO 9; PP. 379-387; ABS. FR.; BIBL. 14 REF.; (DEFAUTS RESEAU CRISTAUX IONIQUES. 1ERE CONF. INT.; MARSEILLE; 1973)Conference Paper