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Results 1 to 25 of 1962

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DETERMINATION DE LA TAILLE DE PETITS CRISTAUX PAR DIFFRACTION ELECTRONIQUESOLLIARD C; DUC P.1979; ING. ARCHIT. SUISSES; CHE; DA. 1979; VOL. 105; NO 7; PP. 65-67Article

AGGLOMERATE VON ZWISCHENGITTERATOMEN (SWIRL-DEFEKTE) IN SILIZIUM IHRE BEDEUTUNG FUER GRUNDLAGENFORSCHUNG UND TECHNOLOGIE. = CONGLOMERATS D'INTERSTITIELS (DEFAUTS EN SPIRALES) DANS LE SILICIUM - LEUR SIGNIFICATION DANS LA RECHERCHE FONDAMENTALE ET LA TECHNOLOGIEFOLL H; KOLBESEN B.1976; JB. AKAD. WISSENSCH. GOETTINGEN; DTSCH.; DA. 1976 PARU 1977; PP. 27-45; BIBL. 19 REF.Article

METHODE DIRECTIONNELLE D'ETUDE DU MICROPROFIL DU SILICIUMVASIL'EV AD; GORBACH T YA; KOTOVA NV et al.1977; MIKROELEKTRONIKA; S.S.S.R.; DA. 1977; VOL. 6; NO 3; PP. 249-257; BIBL. 17 REF.Article

RESIDUAL STACKING-FAULT-TYPE CONTRAST IN SILICON AFTER APPARENT UNFAULTING REACTIONSTAN TY.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 10; PP. 714-716; BIBL. 11 REF.Article

ON THE PHASE DIAGRAM OF THE GA-TE SYSTEM IN THE COMPOSITION RANGE 55 AT % TEANTONOPOULOS JG; KARAKOSTAS T; BLERIS GL et al.1981; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1981; VOL. 16; NO 3; PP. 733-738; BIBL. 18 REF.Article

THE CORE STRUCTURE OF EXTRINSIC STACKING FAULTS IN SILICON.KRIVANEK GL; MAHER DM.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 8; PP. 451-453; BIBL. 23 REF.Article

FACETING OF (001) GRAIN BOUNDARIES IN BICRYSTALLINE THIN FILMS OF GOLDCOSANDEY F; BAUER CL.1980; ACTA METALL.; ISSN 0001-6160; USA; DA. 1980; VOL. 28; NO 5; PP. 601-605; ABS. FRE/GER; BIBL. 15 REF.Article

VACANCY LOSS AT GRAIN BOUNDARIES IN QUENCHED POLYCRYSTALLINE GOLDSIEGEL RW; CHANG SM; BALLUFFI RW et al.1980; ACTA METALL.; ISSN 0001-6160; USA; DA. 1980; VOL. 28; NO 3; PP. 249-257; ABS. FRE/GER; BIBL. 23 REF.Article

DEFAUTS ETENDUS ET NON STOECHIOMETRIE DES OXYDES DU TYPE PEROVSKITEPRISEDSKIJ VV; KOMAROV VP; PAN'KO GF et al.1979; DOKL. AKAD. NAUK SSSR; ISSN 0002-3264; SUN; DA. 1979; VOL. 247; NO 3; PP. 620-623; H.T. 1; BIBL. 11 REF.Article

STRUCTURE DU COEUR DES DISLOCATIONS.BOURRET A; DESSEAUX J; RENAULT A et al.1977; J. MICR. SPECTROSC. ELECTRON.; FR.; DA. 1977; VOL. 2; NO 5; PP. 467-472; H.T. 3; ABS. ANGL.; BIBL. 16 REF.Article

DISLOCATION ARRANGEMENTS IN CYCLICALLY DEFORMED POLYCRYSTALLINE MOLYBDENUMMECKE K; HOLSTE C; TERENTJEV WF et al.1980; KRIST. TECH.; DDR; DA. 1980; VOL. 15; NO 1; PP. 83-91; ABS. RUS; BIBL. 21 REF.Article

TRANSMISSION ELECTRON MICROSCOPE STUDY OF IMPERFECTIONS IN TYPE I DIAMONDPHAKEY PP; HUDSON PRW.1978; INDIAN J. PHYS., A; IND; DA. 1978; VOL. 52; NO 4; PP. 365-372; H.T. 9; BIBL. 25 REF.Article

DIRECT OBSERVATION OF THE POLYTYPE PERIODICITIES IN THE BE-SI-O-N SYSTEM.CLARKE DR; SHAW TM; THOMPSON DP et al.1978; J. MATER. SCI.; G.B.; DA. 1978; VOL. 13; NO 1; PP. 217-219; BIBL. 3 REF.Article

IDENTIFICATION OF SMALL DEFECTS IN SILICON BY TRANSMISSION ELECTRON MICROSCOPY.OREL V.1976; SCRIPTA FAC. SCI. NAT. UNIV. PURKYN. BRUN.; TCHECOSL.; DA. 1976; VOL. 6; NO 4; PP. 43-51; ABS. RUSSE; BIBL. 10 REF.Article

ELIMINATION OF SURFACE DAMAGES CAUSED BY GA IN CLOSED CAPSULE DIFFUSIONSJAIN GC; PRASAD A; CHAKRAVARTY BC et al.1978; INDIAN J. PURE APPL. PHYS.; IND; DA. 1978; VOL. 16; NO 6; PP. 571-574; BIBL. 10 REF.Article

ELECTRON IRRADIATION DAMAGE IN NATURAL QUARTZ GRAINSCARTER CB; KOHLSTEDT DL.1981; PHYS. CHEM. MINER.; ISSN 0342-1791; DEU; DA. 1981; VOL. 7; NO 3; PP. 110-116; BIBL. 14 REF.Article

MEASUREMENTS OF DIAMOND LATTICE DISPLACEMENTS BY PLATELET DEFECTS WITH ELECTRON MICROSCOPIC MOIRE PATTERNSBURSILL LA; HUTCHISON JL; SUMIDA N et al.1981; NATURE (LOND.); ISSN 0028-0836; GBR; DA. 1981; VOL. 292; NO 5823; PP. 518-520; BIBL. 17 REF.Article

ANODIC DISSOLUTION TECHNIQUE FOR PREPARING LARGE AREA GAAS SAMPLES FOR TRANSMISSION ELECTRON MICROSCOPYSALERNO JP; FAN JCC; GALE RP et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 5; PP. 1162-1164; BIBL. 17 REF.Article

DISLOCATION STRUCTURE IN THE INTERIOR OF A FATIGUED COPPER POLYCRYSTALWINTER AT.1980; ACTA METALL.; ISSN 0001-6160; USA; DA. 1980; VOL. 28; NO 7; PP. 963-964; ABS. GER/FRE; BIBL. 7 REF.Article

THE DECORATION OF EVAPORATED SB2TE3 CLEAVAGE FACESLAMPERT B; REICHELT K.1980; PHILOS. MAG., A; ISSN 0141-8610; GBR; DA. 1980; VOL. 42; NO 5; PP. 683-685Article

ELEKTRONENMIKROSKOPISCHE STRUKTURUNTERSUCHUNG AN WO3-HALTIGEN NIOB (V) OXIDKRISTALLEN-SYSTEM NB2O5-WO3(II) = ETUDE STRUCTURALE PAR MICROSCOPIE ELECTRONIQUE DE L'OXYDE DE NIOBIUM (V) CONTENANT WO3. LE SYSTEME NB2O5-WO3(II)HEURUNG G; GRUEHN R.1980; J. LESS-COMMON MET.; ISSN 0022-5088; CHE; DA. 1980; VOL. 76; PP. 17-32; ABS. ENG; BIBL. 23 REF.Article

LE MACLAGE, MOYEN DE MISE EN ORDRE D'UNE STRUCTURE DE DISLOCATIONS LORS DE LA DEFORMATION SOUS HAUTE PRESSIONGALKIN AA; ZAJTSEV VI; DOBRIKOV AA et al.1980; DOKL. AKAD. NAUK SSSR; ISSN 0002-3264; SUN; DA. 1980; VOL. 253; NO 1; PP. 92-94; H.T. 2; BIBL. 7 REF.Article

AN ELECTRON MICROSCOPIC EXAMINATION OF MONOCLINIC GATEKARAKOSTAS T; ANTONOPOULOS JG; KOKKOU S et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 59; NO 1; PP. K17-K19; H.T. 1; BIBL. 6 REF.Article

GRAIN BOUNDARY ANALYSIS IN TEM. III: DETERMINATION OF CONDITIONS FOR CSL AND APPLICATION IN COPPERKARAKOSTAS T; BLERIS GL; ANTONOPOULOS JG et al.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 55; NO 2; PP. 801-809; ABS. GER; BIBL. 17 REF.Article

LASER EFFECTS IN SILICON WITH DEEP AMORPHOUS LAYERFOTI G; BAERI P; CAMPISANO SU et al.1979; APPL. PHYS.; ISSN 0340-3793; DEU; DA. 1979; VOL. 20; NO 4; PP. 353-356; BIBL. 7 REF.Article

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