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kw.\*:("ANALYSE RETRODIFFUSION RUTHERFORD")

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ON THE ANNEALING OF DAMAGE PRODUCED BY COPPER ION IMPLANTATION OF SILICON SINGLE CRYSTALS.CHADDERTON LT; WHITTON JL.1974; RAD. EFFECTS; G.B.; DA. 1974; VOL. 23; NO 1; PP. 63-66; BIBL. 14 REF.Article

A STUDY OF 2 MEV HELIUM-IRRADIATED PHOSPHORUS-DIFFUSED SILICON.ALLEN CR; BICKNELL RW.1974; PHILOS. MAG.; G.B.; DA. 1974; VOL. 30; NO 3; PP. 483-500; BIBL. 1 P.Article

HEAT TREATMENT OF ION IMPLANTED GAAS.BELL EC; GLACCUM AE; HEMMENT PLF et al.1974; RAD. EFFECTS; G.B.; DA. 1974; VOL. 22; NO 4; PP. 253-258; BIBL. 20 REF.Article

DETERMINATION-OF THE DEPTH DISTRIBUTION OF IMPLANTED HELIUM ATOMS IN NIOBIUM BY RUTHERFORD BACKSCATTERING.ROTH J; BEHRISCH R; SCHERZER BMU et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 1; PP. 643-644; BIBL. 8 REF.Article

DOSE RATE EFFECTS IN INDIUM IMPLANTED GAAS.TINSLEY AW; STEPHENS GA; NOBES MJ et al.1974; RAD. EFFECTS; G.B.; DA. 1974; VOL. 23; NO 3; PP. 165-169; BIBL. 20 REF.Article

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