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CHARACTERISTIC RADIATION FROM CHANNELED ELECTRONSANDERSEN JU; LAEGSGAARD E.1980; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1980; VOL. 44; NO 16; PP. 1079-1082; BIBL. 13 REF.Article

PLANAR-CHANNELING RADIATION AND COHERENT BREMSSTRAHLUNG FOR MEV ELECTRONSANDERSEN JU; ERIKSEN KR; LAEGSGAARD E et al.1981; PHYS. SCR.; ISSN 0031-8949; SWE; DA. 1981; VOL. 24; NO 3; PP. 588-600; BIBL. 27 REF.Article

CHANNELING OF ELECTRONS AND POSITRONS. CORRESPONDENCE BETWEEN CLASSICAL AND QUANTAL DESCRIPTIONS.ANDERSEN JU; ANDERSEN SK; AUGUSTYNIAK WM et al.1977; KGL. DANSKE VIDENSK. SELSK., MAT.-FYS. MEDD.; DANM.; DA. 1977; VOL. 39; NO 10; PP. 1-58; BIBL. 1 P. 1/2Serial Issue

ENHANCEMENT OF POSITRON ANNIHILATION WITH CORE ELECTRONSBONDERUP E; ANDERSEN JU; LOWY DN et al.1979; PHYS. REV., B; USA; DA. 1979; VOL. 20; NO 3; PP. 883-899; BIBL. 20 REF.Article

LOCATION OF IMPURITIES IN COMPOUNDS ASYMMETRY OF CHANNELING DIPSANDERSEN JU; CHECHENIN NG; ZHANG ZU HUA et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 9; PP. 758-760; BIBL. 9 REF.Article

APPLICATION OF THE BLOCKING TECHNIQUE TO MEASURE LIFETIMES OF NUCLEAR LEVELS EXCITED IN (P,ALPHA ) RESONANCE REACTIONS IN P AND ALSHARMA RP; ANDERSEN JU; NIELSEN KO et al.1973; NUCL. PHYS., A; NETHERL.; DA. 1973; VOL. 204; NO 2; PP. 371-384; BIBL. 30 REF.Serial Issue

TEMPERATURE DEPENDENCE OF PT(111) SURFACE RELAXATIONDAVIES JA; JACKSON DP; MATSUNAMI N et al.1978; SURF. SCI.; NLD; DA. 1978; VOL. 78; NO 2; PP. 274-294; BIBL. 23 REF.Article

RADIATION FROM TWO-DIMENSIONAL "MOLECULAR" BOUND STATES OF ELECTRONS CHANNELED IN DIAMONDANDERSEN JU; DATZ S; LAEGSGAARD E et al.1982; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1982; VOL. 49; NO 3; PP. 215-218; BIBL. 8 REF.Article

ANGULAR DEPENDENCE OF PROBABILITY FOR PROTON-INDUCED CU K-SHELL IONIZATION AT LARGE SCATTERING ANGLES.ANDERSEN JU; KOCBACH L; LAEGSGAARD E et al.1976; J. PHYS. B; G.B.; DA. 1976; VOL. 9; NO 18; PP. 3247-3262; BIBL. 21 REF.Article

DIRECT COMPARISON OF MOESSBAUER AND CHANNELING STUDIES OF IMPLANTED 119SN IN SILICON SINGLE CRYSTALS.WEYER G; ANDERSEN JU; DEUTCH BI et al.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 24; NO 2; PP. 117-121; BIBL. 19 REF.Article

MOESSBAUER AND CHANNELING STUDIES ON 119TE, 119SB AND 119SN IMPLANTS IN GROUP-IV ELEMENTS.WEYER G; DEUTCH BI; NYLANDSTED LARSEN A et al.1974; J. PHYS., COLLOQ.; FR.; DA. 1974; NO 6; PP. 297-300; ABS. FR.; BIBL. 6 REF.; (CONF. INT. APPL. EFFET MOESSBAUER; BENDOR; 1974)Conference Paper

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