SUPERCONDUCTING PROPERTIES OF PB-SN-IN ALLOYS DIRECTIONALLY SOLIDIFIED ABOARD SKYLAB.ANDERSON WT JR; REGER JL.1977; PROGR. ASTRONAUT. AERONAUT.; U.S.A.; DA. 1977; VOL. 52; PP. 567-578; BIBL. 1 P. 1/2Article

GAAS FET FAILURE MECHANISMS DUE TO HIGH HUMIDITY AND IONIC CONTAMINATIONANDERSON WT JR; CHRISTOU A.1980; I.E.E.E. TRANS. RELIABIL.; USA; DA. 1980; VOL. 29; NO 3; PP. 222-231; BIBL. 7 REF.Article

DEPOSITION OF THIN REFRACTORY MIS STRUCTURES ON INPCHRISTOU A; ANDERSON WT JR.1980; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1980; VOL. 9; NO 3; PP. 585-600; BIBL. 16 REF.Article

MATERIAL REACTIONS AND BARRIER HEIGHT VARIATIONS IN SINTERED AL-INP SCHOTTKY DIODESCHRISTOU A; ANDERSON WT JR.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 10; PP. 857-863; BIBL. 17 REF.Article

SUPERCONDUCTING PROPERTIES OF PB-SN-IN ALLOYS DIRECTIONALLY SOLIDIFIED ABOARD SKYLABANDERSON WT JR; REGER JL.1975; IN: AM. INST. AERONAUT. ASTRONAUT. 10TH THERMOPHYS. CONF.; DENVER, COLO.; 1975; NEW YORK; A.I.A.A.; DA. 1975; VOL. 655; PP. 1-6; BIBL. 17 REF.Conference Paper

DEVELOPMENT OF OHMIC CONTACTS FOR GAAS DEVICES USING EPITAXIAL GE FILMSANDERSON WT JR; CHRISTOU A; DAVEY JE et al.1978; I.E.E.E. J. SOLID STATE CIRCUITS; USA; DA. 1978; VOL. 13; NO 4; PP. 430-435; BIBL. 16 REF.Article

A COMPARATIVE ANALYSIS OF STUDENT-TEACHER INTERPERSONAL SIMILARITY/DISSIMILARITY AND TEACHING EFFECTIVENESS.ANDERSON WT JR; ALPERT MI; GOLDEN LL et al.1977; J. EDUC. RES.; U.S.A.; DA. 1977; VOL. 71; NO 1; PP. 36-44; BIBL. 32 REF.Article

LASER ANNEALED TA/GE AND NI/GE OHMIC CONTACTS TO GAASANDERSON WT JR; CHRISTOU A; GIULIANI JF et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 5; PP. 115-117; BIBL. 12 REF.Article

SMOOTH AND CONTINUOUS OHMIC CONTACTS TO GAAS USING EPITAXIAL GE FILMS.ANDERSON WT JR; CHRISTOU A; DAVEY JE et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 5; PP. 2998-3000; BIBL. 13 REF.Article

LONG-TERM TRANSIENT RADIATION-RESISTANT GAAS FET'SANDERSON WT JR; SIMONS M; KING EE et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 9; PP. 248-250; BIBL. 6 REF.Article

HIGH PERFORMANCE MILLIMETRE GE-GAAS MIXER DIODE FOR LOW L.O. POWER APPLICATIONSCHRISTOU A; ANDERSON WT JR; DAVEY JE et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 7; PP. 254-256; BIBL. 7 REF.Article

THE EFFECTS OF ION IMPLANTATION AND PULSED ELECTRON BEAM ANNEAL ON GE FILMS GROWN EPITAXIALLY ON <100> GAASTSENG W; DIETRICH H; DAVEY J et al.1980; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1980; VOL. 9; NO 3; PP. 685-692; BIBL. 6 REF.Article