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THE GROWTH OF NIOBIUM ON PERFECT AND IMPERFECT SAPPHIRECUOMO JJ; ANGILELLO J.1973; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1973; VOL. 120; NO 1; PP. 125-128; BIBL. 9 REF.Serial Issue

CONTACT REACTION BETWEEN SI AND PD-W ALLOY FILMSOLOWOLAFE JO; TU KN; ANGILELLO J et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 10; PP. 6316-6320; BIBL. 20 REF.Article

THE INTERPRETATION OF DISLOCATION CONTRAST IN X-RAY TOPOGRAPHS OF GAAS1-XPX.MADER S; BLAKESLEE AE; ANGILELLO J et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 11; PP. 4730-4734; BIBL. 18 REF.Article

PRECISE LATTICE PARAMETER DETERMINATION OF PTHG4 = DETERMINATION PRECISE DES PARAMETRES CRISTALLINS DE PTHG4LAHIRI SK; ANGILELLO J; NATAN M et al.1982; J. APPL. CRYSTALLOGR.; ISSN 0021-8898; DNK; DA. 1982; VOL. 15; NO 1; PP. 100-101; BIBL. 9 REF.Article

A VISCOUS FLOW MODEL TO EXPLAIN THE APPEARANCE OF HIGH DENSITY THERMAL SIO2 AT LOW OXIDATION TEMPERATURESIRENE EA; TIERNEY E; ANGILELLO J et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2594-2597; BIBL. 26 REF.Article

PREPARATION AND CHARACTERIZATION OF RUTHENIUM DIOXIDE CRYSTALSSHAFER MW; FIGAT RA; OLSON B et al.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 9; PP. 1625-1628; BIBL. 15 REF.Article

Stresses and radiation damage in Ar+ and Ti+ ion-implanted siliconMADAKSON, P; ANGILELLO, J.Journal of applied physics. 1987, Vol 62, Num 5, pp 1688-1693, issn 0021-8979Article

High-speed X-ray diffraction and in situ resistivity measurements at temperatures of 100 to 1000 K = Diffraction de rayons X à haute vitesse et mesures in situ de résistivité à des températures allant de 100 à 1000 KANGILELLO, J; THOMPSON, R. D; TU, K. N et al.Journal of applied crystallography. 1989, Vol 22, pp 523-527, issn 0021-8898, 6Article

Crystallization kinetics of amorphous NiSix filmsTHOMPSON, R. D; ANGILELLO, J; TU, K. N et al.Thin solid films. 1990, Vol 188, Num 2, pp 259-265, issn 0040-6090, 7 p.Conference Paper

AL-CU ALLOY FOR GAS PANELSBRUSIC V; D'HEURLE FM; MACINNES RD et al.1978; I.B.M. J. RES. DEVELOP.; USA; DA. 1978; VOL. 22; NO 6; PP. 647-657; BIBL. 17 REF.Article

Epitaxy of (100) Cu on (100) Si by evaporation near room temperatures : in-plane epitaxial relation and channeling analysisCHIN-AN CHANG; LIU, J. C; ANGILELLO, J et al.Applied physics letters. 1990, Vol 57, Num 21, pp 2239-2240, issn 0003-6951Article

Lattice compression from conduction electrons in heavily doped Si:AsCARGILL, G. S; ANGILELLO, J; KAVANAGH, K. L et al.Physical review letters. 1988, Vol 61, Num 15, pp 1748-1751, issn 0031-9007, 4 p.Article

Oriented growth of ultrathin tungsten films on sapphire substrates = Croissance orientée des couches ultraminces de tungstène sur des supports en saphirSOUK, J. H; SEGMULLER, A; ANGILELLO, J et al.Journal of applied physics. 1987, Vol 62, Num 2, pp 509-512, issn 0021-8979Article

TANTALUM SILICIDE FILMS DEPOSITED BY DC SPUTTERINGANGILELLO J; BAGLIN JEE; CARDONE F et al.1981; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1981; VOL. 10; NO 1; PP. 59-93; BIBL. 37 REF.Article

Properties of diamond structure SnGe films grown by molecular beam epitaxyHARWIT, A; PUKITE, P. R; ANGILELLO, J et al.Thin solid films. 1990, Vol 184, pp 395-401, issn 0040-6090, 7 p.Conference Paper

Strain relaxation and interdiffusion in Si/Si1-xGex strained layer superlatticesGOORSKY, M. S; KESAN, V.P; OTT, J. A et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 2, pp 927-929, issn 0734-211XConference Paper

Thermal stability of Si1-xCx/Si strained layer superlatticesGOORSKY, M. S; IYER, S. S; EBERL, K et al.Applied physics letters. 1992, Vol 60, Num 22, pp 2758-2760, issn 0003-6951Article

Thermal stability of Pb-alloy Josephson junction electrode materials. VII: Concentration range of single ε-phase Pb-Bi films used in counterelectrodesMURAKAMI, M; HUANG, H. C. W; ANGILELLO, J et al.Journal of applied physics. 1983, Vol 54, Num 2, pp 738-742, issn 0021-8979Article

Preparation and some properties of sputtered Co/U-As multilayersPLASKETT, T. S; FUMAGALLI, P; MCGUIRE, T. R et al.IEEE transactions on magnetics. 1992, Vol 28, Num 5, pp 2659-2661, issn 0018-9464, 2Conference Paper

Disorder in Al-Li-Cu and Al-Mn-Si icosahedral alloysHEINEY, P. A; BANCEL, P. A; HORN, P. M et al.Science (Washington, D.C.). 1987, Vol 238, Num 4827, pp 660-663, issn 0036-8075Article

Lanthanide gallate perovskite-type substrates for epitaxial, high-Tc superconducting Ba2YCu3O7-δ filmsGIESS, E. A; SANDSTROM, R. L; GALLAGHER, W. J et al.IBM journal of research and development. 1990, Vol 34, Num 6, pp 916-926, issn 0018-8646Article

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