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Results 1 to 25 of 16274

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(Ni80Co20/Cu) multilayers : giant magnetoresistance with low saturation fieldBIAN, X; STRÖM-OLSEN, J. O; ALTOUNIAN, Z et al.Applied physics letters. 1993, Vol 62, Num 26, pp 3525-3527, issn 0003-6951Article

1.3 μm decoupled confinement heterostructure lasers grown by chemical beam epitaxyHAUSSER, S; HARDER, C. S; MEIER, H. P et al.Applied physics letters. 1993, Vol 62, Num 7, pp 663-665, issn 0003-6951Article

11.6 W peak power, diffraction-limited diode-to-diode optical amplifierMEHUYS, D; WELCH, D. F; GOLDBERG, L et al.Applied physics letters. 1993, Vol 62, Num 6, pp 544-546, issn 0003-6951Article

7Ni-O chemical interaction and the transition temperature of Ni-doped Bi2Sr2Ca1Cu2O8ALMERAS, P; KESZEI, B; BERGER, H et al.Applied physics letters. 1993, Vol 63, Num 4, pp 562-564, issn 0003-6951Article

8×18 top emitting independently addressable surface emitting laser arrays with uniform threshold current and low threshold voltageVAKHSHOORI, D; WYNN, J. D; ZYDZIK, G. J et al.Applied physics letters. 1993, Vol 62, Num 15, pp 1718-1720, issn 0003-6951Article

80-111 GHz quasi-optical measurement of the complex conductivities of YBa2Cu3O7 superconducting thin filmsDAWEI ZHANG; PLANT, D. V; FETTERMAN, H. R et al.Applied physics letters. 1993, Vol 62, Num 11, pp 1298-1300, issn 0003-6951Article

A novel hysteresis loop and indirect exchange coupling in Co/Pt/Gd/Pt multilayer filmsTAKANASHI, K; KUROKAWA, H; FUJIMORI, H et al.Applied physics letters. 1993, Vol 63, Num 11, pp 1585-1587, issn 0003-6951Article

Absorption and scattering in nonlinear optical polymeric systemsSKUMANICH, A; JURICH, M; SWALEN, J. D et al.Applied physics letters. 1993, Vol 62, Num 5, pp 446-448, issn 0003-6951Article

Admittance spectroscopy characterization of InP/InGaAsP single quantum wells grown by low-pressure metalorganic chemical vapor depositionZHAO, J. H; LU, Z; BUCHWALD, W et al.Applied physics letters. 1993, Vol 62, Num 22, pp 2810-2812, issn 0003-6951Article

Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma-assisted, gas-source molecular beam epitaxyROWLAND, L. B; KERN, R. S; TANAKA, S et al.Applied physics letters. 1993, Vol 62, Num 25, pp 3333-3335, issn 0003-6951Article

Analysis of epitaxial GaxIn1-nAs/InP and AlyIn1-yAs/InP interface region by high resolution x-ray diffractionGIANNINI, C; TAPFER, L; TOURNIE, E et al.Applied physics letters. 1993, Vol 62, Num 2, pp 149-151, issn 0003-6951Article

Analysis of wafer fusing for 1.3 μm vertical cavity surface emitting lasersRAM, R. J; YANG, L; NAUKA, K et al.Applied physics letters. 1993, Vol 62, Num 20, pp 2474-2476, issn 0003-6951Article

Aspheric waveguide lenses for photonic integrated circuitsVERDIELL, J.-M; NEWKIRK, M. A; KOCH, T. L et al.Applied physics letters. 1993, Vol 62, Num 8, pp 808-810, issn 0003-6951Article

Band edge shifts of p-type copper indium diselenide electrodes in aqueous electrolytesSIRIPALA, W; VEDEL, J; LINCOT, D et al.Applied physics letters. 1993, Vol 62, Num 5, pp 519-521, issn 0003-6951Article

Band-gap narrowing in ordered Ga047In053AsARENT, D. J; BODE, M; BERTNESS, K.A et al.Applied physics letters. 1993, Vol 62, Num 15, pp 1806-1808, issn 0003-6951Article

Blue emission of porous siliconLEE, M. K; PENG, K. R.Applied physics letters. 1993, Vol 62, Num 24, pp 3159-3160, issn 0003-6951Article

Blue-green injection lasers containing pseudomorphic Zn1-xMgxSySe1-y cladding layers and operating up to 394 KGAINES, J. M; DRENTEN, R. R; HABERERN, K. W et al.Applied physics letters. 1993, Vol 62, Num 20, pp 2462-2464, issn 0003-6951Article

Broadband optical parametric amplification in LiB3O5HONGWEI MAO; BAICHANG WU; CHUANGTIN CHEN et al.Applied physics letters. 1993, Vol 62, Num 16, pp 1866-1868, issn 0003-6951Article

Capacitive detection of subband structure in the electron gas in a wide parabolic GaAs/AlxGa1-xAs quantum wellRIMBERG, A. J; YANG, S; DEMPSEY, J et al.Applied physics letters. 1993, Vol 62, Num 4, pp 390-392, issn 0003-6951Article

Carrier lifetimes in strained InGaAs/(Al)GaAs multiple quantum wellsMOLONEY, M. H; HEGARTY, J; BUYDENS, L et al.Applied physics letters. 1993, Vol 62, Num 25, pp 3327-3329, issn 0003-6951Article

Catalytic effect of phosphine on the deposition of phosphosilicate glass from tetraethoxysilaneTEDDER, L. L; CROWELL, J. E; URAM, K. J et al.Applied physics letters. 1993, Vol 62, Num 7, pp 699-701, issn 0003-6951Article

Characteristics of plasma enhanced chemical vapor deposited tungsten nitride thin filmsCHANG WOO LEE; YONG TAE KIM; SUK-KI MIN et al.Applied physics letters. 1993, Vol 62, Num 25, pp 3312-3315, issn 0003-6951Article

Chemical, structural, and electronic properties of sulfur-passivated InP(001) (2×1) surfaces treated with (NH4)2SxGALLET, D; HOLLINGER, G.Applied physics letters. 1993, Vol 62, Num 9, pp 982-984, issn 0003-6951Article

Comparison of electronic transport in boron-doped homoepitaxial, polycrystalline, and natural single-crystal diamondMALTA, D. M; VON WINDHEIM, J. A; FOX, B. A et al.Applied physics letters. 1993, Vol 62, Num 23, pp 2926-2928, issn 0003-6951Article

Concentration and collimation of diffuse linear light sourcesDAVIDSON, N; FRIESEM, A. A.Applied physics letters. 1993, Vol 62, Num 4, pp 334-336, issn 0003-6951Article

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