Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substratesMCNEILL, D. W; BHATTACHARYA, S; WADSWORTH, H et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 2, pp 119-123, issn 0957-4522, 5 p.Conference Paper

Impact of buried oxide thickness and ground plane resistivity on substrate cross-talk in ground plane silicon-on-insulator (GPSOI) cross-talk suppression technologySTEFANOU, S; HAMEL, J. S; BAINE, P et al.IEEE international SOI conference. 2004, pp 84-85, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper

Manufacturing processes for WSi₂-GPSOI substrates and their influence on cross-talk suppression and inductanceBAINE, P; GAMBLE, H; ARMSTRONG, B. M et al.Proceedings - Electrochemical Society. 2003, pp 57-63, issn 0161-6374, isbn 1-56677-402-0, 7 p.Conference Paper

Deposition of tungsten by plasma enhanced chemical vapour depositionBAIN, M. F; ARMSTRONG, B. M; GAMBLE, H. S et al.Journal de physique. IV. 1999, Vol 9, Num 8, pp Pr8.827-Pr8.833, issn 1155-4339, 2Conference Paper

Growth mechanism of epitaxial silicon carbide produced using rapid thermal CVDRUDDELL, F. H; ARMSTRONG, B. M; GAMBLE, H. S et al.Journal de physique IV. Colloque. 1991, Vol 1, Num 2, pp C2.823-C2.830Conference Paper

Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectorsRUDDELL, F. H; SUDER, S. L; MARCZEWSKI, J et al.Solid-state electronics. 2008, Vol 52, Num 12, pp 1849-1853, issn 0038-1101, 5 p.Conference Paper

Effect of deposition temperature on the formation of CoSi₂through the rapid thermal annealing of CVD cobaltBAIN, M. F; DEO, N; ARMSTRONG, B. M et al.Microelectronic engineering. 2004, Vol 76, Num 1-4, pp 336-342, issn 0167-9317, 7 p.Conference Paper

Cross-talk suppression faraday cage structure in silicon-on-insulatorSTEFANOU, S; HAMEL, J. S; BAINE, P et al.IEEE International SOI conference. 2002, pp 181-182, isbn 0-7803-7439-8, 2 p.Conference Paper

The manufacture of silicon power devices using welding techniquesPARKES, C; LING, E; MITCHELL, S. J. N et al.Journal of materials processing technology. 1992, Vol 33, Num 4, pp 493-506, issn 0924-0136Conference Paper

Epitaxial silicon growth by rapid thermal CVDMCNEILL, D. W; LIANG, Y; MONTGOMERY, J. H et al.Journal de physique IV. Colloque. 1991, Vol 1, Num 2, pp C2.779-C2.786Conference Paper

Very-shallow low-resistivity p⁺-n junctions for CMOS technologyLING, E; MAGUIRE, P. D; GAMBLE, H. S et al.IEEE electron device letters. 1987, Vol 8, Num 3, pp 96-97, issn 0741-3106Article

Low resistance polysilicon interconnects with self-aligned metalMITCHELL, N. S. J; ARMSTRONG, B. M; GAMBLE, H. S et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1986, Vol 4, Num 3, pp 755-757, issn 0734-211XArticle

Germanium on sapphire substrates for system on a chipGAMBLE, H. S; ARMSTRONG, B. M; BAINE, P. T et al.Materials science in semiconductor processing. 2008, Vol 11, Num 5-6, pp 195-198, issn 1369-8001, 4 p.Conference Paper

Germanium MOS capacitors with hafnium dioxide and silicon dioxide dielectricsWADSWORTH, H. J; BHATTACHARYA, S; MCNEILL, D. W et al.Materials science in semiconductor processing. 2006, Vol 9, Num 4-5, pp 685-689, issn 1369-8001, 5 p.Conference Paper

Selective deposition of CVD iron on silicon dioxide and tungstenLOW, Y. H; BAIN, M. F; BIEN, D. C. S et al.Microelectronic engineering. 2006, Vol 83, Num 11-12, pp 2229-2233, issn 0167-9317, 5 p.Conference Paper

Rapid thermal oxidation of Ge-rich strained layersDAS, S; CHAKRABORTY, S; MOORE, R. A et al.International conference on microelectronics. 2004, isbn 0-7803-8166-1, 2Vol, vol 2, 479-482Conference Paper

The deposition and characterisation of CVD tungsten silicide for applications in microelectronicsBAIN, M. F; ARMSTRONG, B. M; GAMBLE, H. S et al.Vacuum. 2002, Vol 64, Num 3-4, pp 227-232, issn 0042-207XConference Paper

Polycrystalline silicon film growth in a SiF₄/SiH₄/H₂ plasmaLEE, B; QUINN, L. J; BAINE, P. T et al.Thin solid films. 1999, Vol 337, Num 1-2, pp 55-58, issn 0040-6090Conference Paper

Large-area shower implanter for thin-film transistorsWU, Y; MONTGOMERY, J. H; REFSUM, A et al.IEE proceedings. Circuits, devices and systems. 1994, Vol 141, Num 1, pp 23-26, issn 1350-2409Article

The study of selectivity in silicon selective epitaxial growthLIANG YE; ARMSTRONG, B. M; GAMBLE, H. S et al.Microelectronic engineering. 1994, Vol 25, Num 2-4, pp 153-158, issn 0167-9317Conference Paper

LRP equipment characterisation at low temperatures and application to polysilicon bipolar emitter processingRUDDELL, F; PARKES, C; ARMSTRONG, B. M et al.Semiconductor science and technology. 1990, Vol 5, Num 7, pp 765-770, issn 0268-1242Article

Electrical properties of high-k ZrO₂ gate dielectrics on strained Ge-rich layersBHATTACHARYA, S; MCCARTHY, J; ARMSTRONG, B. M et al.International conference on microelectronics. 2004, isbn 0-7803-8166-1, 2Vol, vol 1, 405-407Conference Paper

Fabrication of sub-micron active layer SSOI substrates using ion splitting and wafer bonding technologiesRUDDELL, F. H; BAIN, M. F; SUDER, S et al.Proceedings - Electrochemical Society. 2003, pp 25-30, issn 0161-6374, isbn 1-56677-402-0, 6 p.Conference Paper

Fabrication of sub-micron active layer SSOI substrates using ion splitting and wafer bonding technologiesRUDDELL, F. H; BAIN, M. F; SUDER, S et al.Proceedings - Electrochemical Society. 2003, pp 57-62, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

SiGe HBTs on bonded wafer substratesHALL, S; LAMB, A. C; BAIN, M et al.Microelectronic engineering. 2001, Vol 59, Num 1-4, pp 449-454, issn 0167-9317Conference Paper