au.\*:("ARNETT PC")
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SILICON NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES.ARNETT PC; YUN BH.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 3; PP. 94-96; BIBL. 6 REF.Article
A JOSEPHSON TECHNOLOGY SYSTEM LEVEL EXPERIMENTKETCHEN MB; VAN DER HOEVEN BJ; MATISOO J et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 10; PP. 262-265; BIBL. 19 REF.Article
