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RESIDUAL DEFECTS IN SI PRODUCED BY RECOIL IMPLANTATION OF OXYGEN.MOLINE RA; CULLIS AG.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 10; PP. 551-553; BIBL. 7 REF.Article

RANGE PARAMETERS OF HEAVY IONS AT 10 AND 35 KEV IN SILICON.FEUERSTEIN A; KAIBITZER S; OETZMANN H et al.1975; PHYS. LETTERS, A; NETHERL.; DA. 1975; VOL. 51; NO 3; PP. 165-166; BIBL. 13 REF.Article

TRANSIENT ANNEALING OF ARSENIC-IMPLANTED SILICON USING A GRAPHITE STRIP HEATERTSAUR BY; DONNELLY JP; FAN JCC et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 1; PP. 93-95; BIBL. 11 REF.Article

IONIZATION ENHANCED ANNEALING IN P AND AS IMPLANTED SI LAYERS.SUSKI J; KRYNICKI J; RZEWUSKI H et al.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 30; NO 2; PP. 125-126; BIBL. 4 REF.Article

PULSED ANNEALING OF SEMICONDUCTORS BY MICROWAVE ENERGYCHENEVIER P; COHEN J; KAMARINOS G et al.1982; J. PHYS., LETT.; ISSN 0302-072X; FRA; DA. 1982; VOL. 43; NO 8; PP. L291-L294; ABS. FRE; BIBL. 9 REF.Article

Anomalous distribution of As during implantation in silicon under self-annealing conditionsLULLI, G; MERLI, P. G; RIZOLI, R et al.Journal of applied physics. 1989, Vol 66, Num 7, pp 2940-2946, issn 0021-8979, 7 p.Article

Laser-induced photothermal reflectance investigation of silicon damaged by arsenic ion implantation: a temperature studyVITKIN, I. A; CHRISTOFIDES, C; MANDELIS, A et al.Applied physics letters. 1989, Vol 54, Num 24, pp 2392-2394, issn 0003-6951, 3 p.Article

HIGH-RESOLUTION SCANNING ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICONRATNAKUMAR KN; PEASE RFW; BARTELINK DJ et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 6; PP. 463-466; BIBL. 7 REF.Article

DOSE DEPENDENCE IN THE LASER ANNEALING OF ARSENIC-IMPLANTED SILICONVENKATESAN TNC; GOLOVCHENKO JA; POATE JM et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 5; PP. 429-431; BIBL. 3 REF.Article

CHARACTERIZATION OF ION IMPLANTED AND LASER ANNEALED POLYCRYSTALLINE SI BY A RAMAN MICROPROBENAKASHIMA S; INOUE Y; MIYAUCHI M et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 6; PP. 524-526; BIBL. 6 REF.Article

DECLUSTERING AND MELTING THRESHOLD STUDY IN LASER IRRADIATED SI(AS)RIMINI E; CHU WK; MADER SR et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 5; PP. 3696-3699; BIBL. 20 REF.Article

IN SITU SELF ION BEAM ANNEALING OF DAMAGE IN SI DURING HIGH ENERGY (0.53 MEV-2.56 MEV) AS+ ION IMPLANTATIONNAKATA J; TAKAHASHI M; KAJIYAMA K et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 11; PP. 2211-2221; BIBL. 15 REF.Article

ARSENIC ION CHANNELING THROUGH SINGLE CRYSTAL SILICONWADA Y; NISHIMATSU S; HASHIMOTO N et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 1; PP. 206-210; BIBL. 16 REF.Article

LASER INDUCED AS PROFILE BROADENING IN AMORPHOUS SILICON LAYERSGRIMALDI MG; BAERI P; CAMPISANO SU et al.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 54; NO 1; PP. 55-59; ABS. GER; BIBL. 22 REF.Article

THEORETICAL OSCILLATOR STRENGTHS FOR SOME TRANSITIONS IN P(III), AS(III), SB(III) AND BI(III).MIGDALEK J.1976; J. QUANT. SPECTROSC. RAD. TRANSFER; G.B.; DA. 1976; VOL. 16; NO 5; PP. 385-388; BIBL. 7 REF.Article

ACTIVATION OF ARSENIC-IMPLANTED SILICON USING AN INCOHERENT LIGHT SOURCEPOWELL RA; YEP TO; FULKS RT et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 2; PP. 150-152; BIBL. 16 REF.Article

THE CONCENTRATION PROFILES OF PHOSPHORUS, ARSENIC AND RECOILED OXYGEN ATOMS IN SI BY ION IMPLANTATION INTO SIO2-SIHIRAO T; INOUE K; YAEGASHI Y et al.1979; JAP. J. APPL. PHYS.; JPN; DA. 1979; VOL. 18; NO 3; PP. 647-656; BIBL. 17 REF.Article

DEPTH PROFILE DETECTION LIMIT OF 3 X 1015 ATOM CM-3 FOR AS IN SI USING CS+ BOMBARDMENT NEGATIVE SECONDARY ION MASS SPECTROMETRY.WILLIAMS P; EVANS CA JR.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 11; PP. 559-561; BIBL. 7 REF.Article

CORRELATION OF THE STRUCTURE AND ELECTRICAL PROPERTIES OF ION-IMPLANTED AND LASER-ANNEALED SILICONCULLIS AG; WEBBER HC; CHEW NG et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 7; PP. 547-550; BIBL. 20 REF.Article

DELETERIOUS EFFECTS OF AN OXIDIZING DRIVE-IN AMBIENT ON IMPLANTED ARSENIC EMITTERS IN (111) SILICONPARRILLO LC; MORRIS BL.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 4; PP. 345-347; BIBL. 14 REF.Article

SPATIALLY VARIED ACTIVATION OF ION-IMPLANTED AS DURING THE REGROWTH OF AMORPHOUS LAYERS IN SI.OHMURA Y; INOUE T; YAMAMOTO Y et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 6; PP. 3597-3599; BIBL. 8 REF.Article

THE MECHANISMS OF IMPURITY REDISTRIBUTION ON LASER-ANNEALING OF ION-IMPLANTED SEMICONDUCTORSDVURECHENSKY AV; KACHURIN GA; ANTONENKO AK et al.1978; RAD. EFFECTS; GBR; DA. 1978; VOL. 37; NO 3-4; PP. 179-181; BIBL. 7 REF.Article

LASER ANNEALING OF ARSENIC IMPLANTES SILICON.KRYNICKI J; SUSKI J; UGNIEWSKI S et al.1977; PHYS. LETTERS, A; NETHERL.; DA. 1977; VOL. 61; NO 3; PP. 181-182; BIBL. 9 REF.Article

PLANAR AND AXIAL CHANNELING OF 800-KEV AS IN <110> SILICON.WILSON RG.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 12; PP. 770-772; BIBL. 1 REF.Article

MICROSCOPIC LOCATION OF ELECTRON TRAPS INDUCED BY ARSENIC IMPLANTATION IN SILICON DIOXIDEALEXANDROVA S; YOUNG DR.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 1; PP. 174-178; BIBL. 10 REF.Article

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