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HIGH-GAIN LOW-NOISE GAALAS-GAAS PHOTOTRANSISTORSSCAVENNEC A; ANKRI D; BESOMBES C et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 394-395; BIBL. 11 REF.Article

DETERMINATION OF MINORITY CARRIER LIFETIME AND EFFECTIVE BACK SURFACE RECOMBINATION VELOCITY IN BSF SILICON SOLAR CELLS FROM TRANSIENT MEASUREMENTSJAIN SC; AGARWAL SK; RAY UC et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 365-367; BIBL. 11 REF.Article

CAPACITANCE/VOLTAGE CHARACTERISTICS OF SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR (SIS) STRUCTURENAGAI K; HAYASHI Y; SEKIGAWA T et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 376-377; BIBL. 2 REF.Article

P-GAAS/P-GA1-XALXAS ISOTYPE HETEROJUNCTIONS IN DOUBLE HETEROSTRUCTURE LASER MATERIALHAKKI BW.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6054-6058; BIBL. 28 REF.Article

(GAAL)AS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS WITH GRADED COMPOSITION IN THE BASEMILLER DL; ASBECK PM; ANDERSON RJ et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 367-368; BIBL. 7 REF.Article

SELECTIVELY-DOPED AL0.48IN0.52AS/GA0.47IN0.53AS HETEROSTRUCTURE FIELD EFFECT TRANSISTORPEARSALL TP; HENDEL R; O'CONNOR P et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 1; PP. 5-8; BIBL. 14 REF.Article

ELECTRONIC PROPERTIES OF FLAT-BAND SEMICONDUCTEUR HETEROSTRUCTURESWHITE SR; SHAM LJ.1981; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1981; VOL. 47; NO 12; PP. 879-882; BIBL. 18 REF.Article

GAIN SUPPRESSION IN GAAS/ALGAAS TJS LASERSKAWANISHI H; PETERSEN PE.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 6; PP. 823-824; BIBL. 8 REF.Article

IR-RED GAAS-ALAS SUPERLATTICE LASER MONOLITHICALLY INTEGRATED IN A YELLOW-GAP CAVITYHOLONYAK N JR; LAIDIG WD; CAMRAS MD et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 1; PP. 102-104; BIBL. 11 REF.Article

CHARACTERISTICS AND ANALYSIS OF CHANNELED SUBSTRATE NARROW STRIPE GAAS/GAALAS LASERSCURTIS JP; PLUMB RG; GOODWIN AR et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 5; PP. 3444-3449; BIBL. 9 REF.Article

FORWARD BIAS VOLTAGE CHARACTERISTICS FOR (GAAL)AS AND (GAIN)(ASP) LASERSTHOMAS B; KAR A; HENSHALL GD et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 6; PP. 312-315; BIBL. 5 REF.Article

MOVPE GROWTH OF GA1-XALXAS-GAAS QUANTUM WELL HETEROSTRUCTURESFRIJLINK PM; MALUENDA J.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 9; PART. 2; PP. L574-L576; BIBL. 4 REF.Article

TEMPERATURE DEPENDENCE OF INGAASP DOUBLE-HETEROSTRUCTURE LASER CHARACTERISTICSNAHURY RE; POLLOCK MA; DE WINTER JC et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 21; PP. 695-696; BIBL. 12 REF.Article

GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM-WELL LEDS EMITTING AT 1.6 MU MALAVI K; PEARSALL TP; FORREST SR et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 6; PP. 227-229; BIBL. 11 REF.Article

AN ANALYTICAL SOLUTION OF THE LATERAL CURRENT SPEADING AND DIFFUSION PROBLEM IN NARROW OXIDE STRIPE (GAAL)AS/GAAS DH LASERSLENGYEL G; MEISSNER P; PATZAK E et al.1982; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 4; PP. 464-471; BIBL. 25 REF.Article

LUMINESCENCE PROPERTIES OF GAAS-GA1-XALXAS DOUBLE HETEROSTRUCTURES AND MULTIQUANTUM-WELL SUPERLATTICES GROWN BY MOLECULAR BEAM EPITAXYPETROFF PM; WEISBUCH C; DINGLE R et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 12; PP. 965-967; BIBL. 14 REF.Article

MAGNETOSTATIC FIELD EFFECT ON THRESHOLD CURRENT IN A GAAS/AL Y GA1-YAS DOUBLE-HETEROSTRUCTURE LASERHSIEH HC; LEE GY.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4414-4417; BIBL. 16 REF.Article

MOBILITY ENHANCEMENT IN INVERTED ALXGA1-XAS/GAAS MODULATION DOPED STRUCTURES AND ITS DEPENDENCE ON DONOR-ELECTRON SEPARATIONMORKOC H; DRUMMOND TJ; THORNE RE et al.1981; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 12; PP. L913-L916; BIBL. 14 REF.Article

HETEROJONCTIONS GA1-XALXAS/GAAS REALISES PAR EPITAXIE LIQUIDE AVEC ENTRAINEMENT CONTROLE DE SOLUTION: CROISSANCE ET CARACTERISATIONBENOIT JACQUES.1979; ; FRA; DA. 1979; DGRST/77 7 1001; 27 P.; 30 CM; BIBL. 11 REF.; ACTION CONCERTEE: COMPOSANTS ET CIRCUITS MICROMINIATURISESReport

IMPURITY PHOTOLUMINESCENCE IN GAAS/GA1-XALXAS MULTIPLE QUANTUM WELLSLAMBERT B; DEVEAUD B; REGRENY A et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 43; NO 6; PP. 443-446; BIBL. 10 REF.Article

NUMERICAL SIMULATION OF GAAS/GAALAS HETEROJUNCTION BIPOLAR TRANSISTORSASBECK PM; MILLER DL; ASATOURIAN R et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 12; PP. 403-406; BIBL. 9 REF.Article

INTERACTION DE PHASES DANS LE SYSTEME NIAS-TIAS ET MESURE DE LA CAPACITE DE VITRIFICATION DU NITIAS2CHERNOV AP; KOVALEVA EV; KALINNIKOV VT et al.1983; ZURNAL NEORGANICESKOJ HIMII; ISSN 0044-457X; SUN; DA. 1983; VOL. 28; NO 7; PP. 1873-1875; BIBL. 5 REF.Article

AN ANALYTICAL SOLUTION OF THE LATERAL CURRENT SPREADING AND DIFFUSION PROBLEM IN NARROW OXIDE STRIPE (GAAL)AS/GAAS DH LASERSLENGYEL G; MEISSNER P; PATZAK E et al.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 4; PP. 618-625; BIBL. 25 REF.Article

ABSORPTION AND STIMULATED EMISSION IN AN ALAS-GAAS SUPERLATTICECOLEMAN JJ; DAPKUS PD; CLARKE DR et al.1981; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 11; PP. 864-866; BIBL. 21 REF.Article

PHOTOLUMINESCENCE D'UNE HETEROJONCTION DOUBLE DONT ON EXCITE L'EMETTEUR A LARGE BANDEGARBUZOV DZ; KHALFIN VB; TULASHVILI EH V et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 2; PP. 242-246; BIBL. 4 REF.Article

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