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Results 1 to 25 of 439

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ETUDE DE THYRISTORS CONSTITUES PAR DES HETEROSTRUCTURES GAAS-ALGAASALFEROV ZH I; KOROL'KOV VI; RAKHIMOV N et al.1978; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1978; VOL. 12; NO 1; PP. 75-81; BIBL. 13 REF.Article

OPTICAL ABSORPTION COEFFICIENT OF (AL0.42GA0.58)AS.SOMMERS HS JR; LOCKWOOD HF.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 9; PP. 4000; BIBL. 6 REF.Article

HIGH-GAIN WIDE-GAP-EMITTER GA1-XALXAS-GAAS PHOTOTRANSISTOR.BENEKING H; MISCHEL P; SCHUL G et al.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 16; PP. 395-396; BIBL. 3 REF.Article

NEGATIVE PHOTOCURRENT IN GAAS-(ALGA)AS HETEROJUNCTIONS.PETRESCU PRAHOVA IB; CONSTANTINESCU C; MIHAILOVICI P et al.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 3; PP. 215-222; BIBL. 16 REF.Article

PARTICULARITES DE LA PHOTOLUMINESCENCE DES COUCHES D'ALXGA1-XAS A LARGEUR DE BANDE INTERDITE VARIABLEVOVNENKO VI; VOROBKALO FM; GLINCHUK KD et al.1976; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1976; NO 23; PP. 34-38; BIBL. 9 REF.Article

TEMPERATURE DEPENDANCE OF THE INDIRECT ABSORPTION EDGE IN ALXGA1-XAS.NEUMANN H; JUNGE W.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 34; NO 1; PP. K39-K41; BIBL. 9 REF.Article

LOW THRESHOLD-CURRENT DENSITY IN 5-LAYER-HETEROSTRUCTURE (GAAL) AS/GAAS LOCALISED-GAIN-REGION INJECTION LASERSTHOMPSON GHB; KIRKBY PA.1973; ELEKTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 13; PP. 295-296; BIBL. 10 REF.Serial Issue

HIGH-SPEED N-ALGAAS-P-GAAS ELECTROLUMINESCENT DIODES.HEINEN J; HARTH W.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 21; PP. 512-513; BIBL. 7 REF.Article

LINEARITY OF HIGH POWER, HIGH RADIANCE GAXAL1-XAS:GE DOUBLE HETEROSTRUCTURE LED'S.STRAUS J; SZENTESI OI.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 484-486; BIBL. 2 REF.Conference Paper

ELECTROABSORPTION IN ALYGA1-YAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURES = ELECTROABSORPTION DANS L'HETEROSTRUCTURE DOUBLE ALYGA1-YAS-ALXGA1-XASREINHART FK.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 8; PP. 372-374; BIBL. 8 REF.Serial Issue

(GAAL)AS LASERS WITH A HETEROSTRUCTURE FOR OPTICAL CONFINEMENT AND ADDITIONAL HETEROJUNCTIONS FOR EXTREME CARRIER CONFINEMENTTHOMPSON GHB; KIRKBY PA.1973; I.E.E.E.J. QUANTUM ELECTRON.; U.S.A.; DA. 1973; VOL. 9; NO 2; PP. 311-318; BIBL. 5 REF.Serial Issue

ETUDE MICROCATHODOLUMINESCENTE DES HETEROJONCTIONS DANS LES SOLUTIONS SOLIDES ALXGA1-XASGIMEL'FARO FA; GOVORKOV AV; FISTUL VI et al.1973; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1973; VOL. 7; NO 1; PP. 55-59; BIBL. 7 REF.Serial Issue

THE EFFECT OF DOUBLE HETEROJUNCTION WAVEGUIDE PARAMETERS ON THE FAR FIELD EMISSION PATTERNS OF LASERSKIRKBY PA; THOMPSON GHB.1972; OPTO-ELECTRONICS; G.B.; DA. 1972; VOL. 4; NO 3; PP. 323-334; BIBL. 4 REF.Serial Issue

OBSERVATION OF NEGATIVE DIFFERENTIAL RESISTANCE IN GA1-XINXAS LIGHT-EMITTING DIODES.ZEHE A; BUTTER E.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 25; NO 2; PP. K137-K140; BIBL. 6 REF.Article

LUMINESCENCE DES SOLUTIONS SOLIDES ARSENIURE D'ALUMINIUM-ARSENIURE DE GALLIUMALFEROV ZH I; GARBUZOV DZ.1973; IZVEST. AKAD. NAUK S.S.S.R., SER. FIZ.; S.S.S.R.; DA. 1973; VOL. 37; NO 3; PP. 651-658; BIBL. 19 REF.; (MATER. MEZHDUNAR. KONF. LYUMIN.; LENINGRAD; 1972)Conference Paper

REPRODUCIBLE LIQUID-PHASE-EPITAXIAL GROWTH OF DOUBLE HETEROSTRUCTURE GAAS-ALXGA1-XAS LASER DIODESMILLER BI; PINKAS E; HAYASHI I et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 6; PP. 2817-2826; BIBL. 19 REF.Serial Issue

INFLUENCE OF PROTON-STRIPE REALIZATION PROCESS ON THE LUMINESCENCE PROPERTIES OF (ALGA)AS DOUBLE HETEROSTRUCTURESRAO EVK; DUHAMEL N.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 102-108; BIBL. 27 REF.Article

MATRICE MONOLITHIQUE D'HETERODIODES LUMINESCENTES A BASE DE ALXGA1-XASALFEROV ZH I; ANDREEV VM; EGOROV BV et al.1978; ZH. TEKH. FIZ.; SUN; DA. 1978; VOL. 48; NO 8; PP. 1729-1732; BIBL. 4 REF.Article

ELECTRON EFFECITVE MASS IN SEMICONDUCTOR SUPERLATTICES.MUKHERJI D; NAG BR.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 75; NO 1; PP. K35-K37; BIBL. 6 REF.Article

SOME OPTICAL PROPERTIES OF THE ALXGA1-XAS ALLOY SYSTEM.MONEMAR B; SHIH KK; PETTIT GD et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 6; PP. 2604-2613; BIBL. 73 REF.Article

DIRECT OBSERVATION OF SUPERLATTICE FORMATION IN A SEMICONDUCTOR HETEROSTRUCTURE.DINGLE R; GOSSARD AC; WIEGMANN W et al.1975; PHYS. REV. LETTERS; U.S.A.; DA. 1975; VOL. 34; NO 21; PP. 1327-1330; BIBL. 9 REF.Article

HETEROPHOTODIODES DE ALXGA1-XAS A RENDEMENT ELEVE ET ACTION RAPIDEALFEROV ZH I; ANDREEV VM; GARBUZOV DZ et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 7; PP. 1265-1270; BIBL. 6 REF.Article

LIMITE D'ABSORPTION DES COUCHES EPITAXIQUES DE ALXGA1-XAS A BANDE VARIABLEZEMBATOV KH B; KRAVCHENKO AF; MASHUKOV YU P et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 7; PP. 1314-1318; BIBL. 10 REF.Article

PARTICULARITES DE LA PHOTOLUMINESCENCE DES COUCHES D'ALXGA1-XAS A BANDE INTERDITE VARIABLEVOVNENKO VI; VOROBKALO FM; GLINCHUK KD et al.1975; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1975; NO 21; PP. 38-44; BIBL. 9 REF.Article

REFRACTIVE INDEX OF GA1-XALXAS.AFROMOWITZ MA.1974; SOLID STATE COMMUNIC.; G.B.; DA. 1974; VOL. 15; NO 1; PP. 59-63; BIBL. 15 REF.Article

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