PARTICULARITES DE LA PHOTOLUMINESCENCE DES COUCHES D'AL_XGA_1-XAS A LARGEUR DE BANDE INTERDITE VARIABLEVOVNENKO VI; VOROBKALO FM; GLINCHUK KD et al.1976; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1976; NO 23; PP. 34-38; BIBL. 9 REF.Article

TEMPERATURE DEPENDANCE OF THE INDIRECT ABSORPTION EDGE IN AL_XGA_1-XAS.NEUMANN H; JUNGE W.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 34; NO 1; PP. K39-K41; BIBL. 9 REF.Article

LOW THRESHOLD-CURRENT DENSITY IN 5-LAYER-HETEROSTRUCTURE (GAAL) AS/GAAS LOCALISED-GAIN-REGION INJECTION LASERSTHOMPSON GHB; KIRKBY PA.1973; ELEKTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 13; PP. 295-296; BIBL. 10 REF.Serial Issue

HIGH-SPEED N-ALGAAS-P-GAAS ELECTROLUMINESCENT DIODES.HEINEN J; HARTH W.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 21; PP. 512-513; BIBL. 7 REF.Article

LINEARITY OF HIGH POWER, HIGH RADIANCE GA_XAL_1-XAS:GE DOUBLE HETEROSTRUCTURE LED'S.STRAUS J; SZENTESI OI.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 484-486; BIBL. 2 REF.Conference Paper

ELECTROABSORPTION IN AL_YGA_1-YAS-AL_XGA_1-XAS DOUBLE HETEROSTRUCTURES = ELECTROABSORPTION DANS L'HETEROSTRUCTURE DOUBLE AL_YGA_1-YAS-AL_XGA_1-XASREINHART FK.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 8; PP. 372-374; BIBL. 8 REF.Serial Issue

(GAAL)AS LASERS WITH A HETEROSTRUCTURE FOR OPTICAL CONFINEMENT AND ADDITIONAL HETEROJUNCTIONS FOR EXTREME CARRIER CONFINEMENTTHOMPSON GHB; KIRKBY PA.1973; I.E.E.E.J. QUANTUM ELECTRON.; U.S.A.; DA. 1973; VOL. 9; NO 2; PP. 311-318; BIBL. 5 REF.Serial Issue

ETUDE MICROCATHODOLUMINESCENTE DES HETEROJONCTIONS DANS LES SOLUTIONS SOLIDES AL_XGA_1-XASGIMEL'FARO FA; GOVORKOV AV; FISTUL VI et al.1973; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1973; VOL. 7; NO 1; PP. 55-59; BIBL. 7 REF.Serial Issue

THE EFFECT OF DOUBLE HETEROJUNCTION WAVEGUIDE PARAMETERS ON THE FAR FIELD EMISSION PATTERNS OF LASERSKIRKBY PA; THOMPSON GHB.1972; OPTO-ELECTRONICS; G.B.; DA. 1972; VOL. 4; NO 3; PP. 323-334; BIBL. 4 REF.Serial Issue

SIMPLE EXPRESSION FOR LIGHT OUTPUT OF EDGE-EMITTING D.H. L.E.D.S.BOTEZ D; ZORY P; BRADY MJ et al.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 22; PP. 716-718; BIBL. 15 REF.Article

FREQUENCY RESPONSE OF GAALAS LIGHT-EMITTING DIODES.HARTH W; HEINEN J.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 4; PP. 478-480; BIBL. 6 REF.Article

DIFFUSION DES ELECTRONS "MARQUES" PAR LE SPIN DANS UNE HETEROSTRUCTURE DOUBLEGARBUZOV DZ; MERKULOV IA; NOVIKOV VA et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 5; PP. 934-939; BIBL. 6 REF.Article

DETERMINATION DE LA LONGUEUR DE DIFFUSION DES PORTEURS DE CHARGE MINORITAIRES DANS LES STRUCTURES AL_XGA_1-XAS-GAASVOROBKALO FM.1975; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1975; NO 19; PP. 24-26; BIBL. 13 REF.Article

DIFFUSION, SOLUBILITE ET ETAT DE CHARGE DU ZINC DANS LES COUCHES EPITAXIQUES DES SOLUTIONS SOLIDES DE AL_XGA_1-XASBOLTAKS BI; DZHAFAROV TD; DEMAKOV YU P et al.1975; FIZ. TEKH. POLURPOVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 5; PP. 825-829; BIBL. 9 REF.Article

SPECTRAL BEHAVIOR AND LINEWIDTH OF (GAAL) AS-GA AS DOUBLE-HETEROSTRUCTURE LASERS AT ROOM TEMPERATURE WITH STRIPE GEOMETRY CONFIGURATIONIIDA S; TAKATA K; UNNO Y et al.1973; I.E.E.E. QUANTUM ELECTRON.; U.S.A.; DA. 1973; VOL. 9; NO 2; PP. 361-366; BIBL. 10 REF.Serial Issue

HETEROSTRUCTURE INJECTION LASERSADAMS MJ.1972; OPT. LASER TECHNOL.; G.B.; DA. 1972; VOL. 4; NO 6; PP. 273-280; BIBL. 3 REF.Serial Issue

SOURCES DE LUMIERE ROUGE A DIODES CONSTITUEES PAR DES JONCTIONS P-N: GA_1-XAL_XAS:SI A BANDE INTERDITE VARIABLETSARENKOV BV; AKPEROV YA G; VERESHCHAK NI et al.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 5; PP. 921-925; BIBL. 6 REF.Serial Issue

NARROW-BANDWIDTH (AL,GA)AS:SI DOUBLE-HETEROSTRUCTURE LED'S. = DIODES LUMINESCENTES A HETEROSTRUCTURE DOUBLE EN (AL,GA)AS:SI AVEC LARGEUR DE BANDE ETROITELAUER RB; ZUCKER J.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 4; PP. 1837-1838; BIBL. 10 REF.Article

PHOTOLUMINESCENCE OF BORON-IMPLANTED AL_XGA_1-XAS (X=0.37).MAKITA Y; GONDA SI.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 6; PP. 333-334; BIBL. 4 REF.Article

CARACTERISTIQUES PHOTOMETRIQUES DE DIODES LUMINEUSES A INJECTIONOLEKSENKO LF; SVECHNIKOV SV; SYPKO NI et al.1975; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1975; NO 20; PP. 81-86; BIBL. 11 REF.Article

(GAAL) AS-GAAS HETEROJUNCTION TRANSISTORS WITH HIGH INJECTION EFFICIENCY. = TRANSISTORS A HETEROJONCTION (GAAL) AS-GAAS AVEC HAUT RENDEMENT D'INJECTIONKONAGAI M; TAKAHASHI K.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 5; PP. 2120-2124; BIBL. 11 REF.Article

ELECTRON TRANSPORT AND EMISSION CHARACTERISTICS OF NEGATIVE ELECTRON AFFINITY AL_XGA_1-XAS ALLOYS (0 <OU= X <OU= 0.3).MARTINELLI RU; ETTENBERG M.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 9; PP. 3896-3898; BIBL. 24 REF.Article

COMPONENTS FOR INTEGRATED OPTICSYARIV A.1972; LASER FOCUS; U.S.A.; DA. 1972; VOL. 8; NO 12; PP. 40-42; BIBL. 9 REF.Serial Issue

GAAS-AL_XGA_1-XAS DOUBLE HETEROSTRUCTURE LASERS-EFFECT OF DOPING ON LASING CHARACTERISTICS OF GAAS = LASERS A DOUBLE HETEROSTRUCTURE EN GAAS-AL_XGA_1-XAS. EFFET DU DOPAGE SUR LES CARACTERISTIQUES LASER DE GAASPINKAS E; MILLER BI; HAYASHI I et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 6; PP. 2827-2835; BIBL. 24 REF.Serial Issue

BURIED-HETEROSTRUCTURE ALGAAS LASERSSAITO K; ITO R.1980; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1980; VOL. 16; NO 2; PP. 205-215; BIBL. 29 REF.Article