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HIGH-RADIANCE SMALL-AREA GALLIUM-INDIUM-ARSENIDE 1.06 MU M LIGHT-EMITTING DIODES.MABBITT AW; GOODFELLOW RC.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 13; PP. 274-275; BIBL. 10 REF.Article

REDUCED DEGRADATION IN INXGA1-XAS ELECTROLUMINESCENT DIODES.ETTENBERG M; NUESE CJ.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 5; PP. 2137-2142; BIBL. 19 REF.Article

EFFICIENT OPTICALLY PUMPED INP AND INXGA1-XAS LASERSROSSI JA; CHINN SR.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 11; PP. 4806-4807; BIBL. 11 REF.Serial Issue

COMPOSITION DEPENDENCE OF ENERGY GAP IN GAINAS ALLOYS.BALIGA BJ; BHAT R; GHANDHI SK et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 10; PP. 4608; BIBL. 10 REF.Article

ZN DIFFUSION IN INXGA1-XAS WITH ZNAS2 SOURCEYAMAMOTO Y; KANBE H.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 1; PP. 121-128; BIBL. 32 REF.Article

IMPACT IONIZATION COEFFICIENTS FOR ELECTRONS AND HOLES IN IN0.14GA0.86AS.PEARSALL TP; NAHORY RE; POLLACK MA et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 6; PP. 330-332; BIBL. 9 REF.Article

OPTICAL PROPERTIES OF GA1-XINXAS LPE-LAYERS AND P-N STRUCTURES.ZEHE A; BUTTER E; JACOBS B et al.1975; KRISTALL U. TECH.; DTSCH.; DA. 1975; VOL. 10; NO 2; PP. 147-154; ABS. ALLEM.; BIBL. 21 REF.Article

REFRACTIVE INDEX OF GA1-XINXAS PREPARED BY VAPOR-PHASE EPITAXYTAKAGI T.1978; JAP. J. APPL. PHYS.; JPN; DA. 1978; VOL. 17; NO 10; PP. 1813-1817; BIBL. 13 REF.Article

CALCULATION OF ENERGY BAND STRUCTURES OF (IN1-XGAX)AS.OHSAKA F.1976; FUJITSU SCI. TECH. J.; JAP.; DA. 1976; VOL. 12; NO 1; PP. 75-91; BIBL. 3 REF.Article

BRUITS DU COURANT DIRECT ET DE L'ELECTROLUMINESCENCE PAR INJECTION DES JONCTIONS P-N DANS LES MONOCRISTAUX DE GA0,9)IN0,1)ASLUK'YANCHIKOVA NB; GARBAR NP; MATINOVA MS et al.1975; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1975; VOL. 20; NO 6; PP. 946-952; ABS. ANGL.; BIBL. 18 REF.Article

ZN-DIFFUSED LASER JUNCTIONS IN INXGA1-XAS AND INASXP1-X GROWN FROM IN SOLUTION AT CONSTANT TEMPERATUREMACKSEY HM; CAMPBELL JC; ZACK GW et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 8; PP. 3533-3537; BIBL. 24 REF.Serial Issue

HIGH RADIANCE GALLIUM INDIUM ARSENIDE LIGHT EMITTING DIODES FOR FIBRE OPTIC COMMUNICATION APPLICATIONS.MABBITT AW; MOBSBY CD; GOODFELLOW RC et al.1975; I.E.E. CONF. PUBL.; G.B.; DA. 1975; NO 132; PP. 119-121; BIBL. 7 REF.; (1 ST. EUR. CONF. OPT. FIBRES COMMUN.; LONDON; 1975)Conference Paper

SATURATION AND RECOVERY OF THE DIRECT INTERBAND ABSORPTION IN SEMICONDUCTORS.REINTJES JF; MCGRODDY JC; BLAKESLEE AE et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 2; PP. 879-882; BIBL. 9 REF.Article

STUDY OF DOPING OF INXGA1-XAS FILMS WITH GERMANIUM.BOLKHOVITYANOV YU B; BOLKHOVITYANOVA RI; MARCHENKO NE et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 31; NO 1; PP. 293-300; ABS. RUSSE; BIBL. 18 REF.Article

CARACTERISTIQUES DE RAYONNEMENT DES HETEROJONCTIONS LASER A BASE DE INP-GAINPASBOGATOV AP; DOLGINOV LM; ELISEEV PG et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 10; PP. 1956-1961; BIBL. 11 REF.Article

MAGNETORESISTANCE NEGATIVE DANS LES MONOCRISTAUX DE SOLUTIONS SOLIDES IN1-XGAXASALIEV MI; DAIBOV AZ; ISMAJLOV IA et al.1974; AKAD. NAUK AZERBAJDZH. S.S.R., DOKL.; S.S.S.R.; DA. 1974; VOL. 30; NO 3; PP. 34-37; ABS. AZERB. ANGL.; BIBL. 15 REF.Article

PARTICULARITES DE LA CONDUCTIVITE ELECTRIQUE DU GAAS DE HAUTE RESISTIVITEBRODOVOJ VA; DERIKOT NZ.1973; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1973; VOL. 7; NO 1; PP. 108-111; BIBL. 6 REF.Serial Issue

THE THERMAL-EXPANSION PARAMETERS OF SOME GAXIN1-XASYP1-Y ALLOYSBISARO R; MERENDA P; PEARSALL TP et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 1; PP. 100-102; BIBL. 12 REF.Article

INFLUENCE D'UN CHAMP ELECTRIQUE FORT SUR LA PHOTOEMISSION DES PHOTOCATHODES DE GAINAS A AFFINITE ELECTRONIQUE NEGATIVEMUSATOV AL; KOROTKIKH VL.1978; FIZ. TVERD. TELA; S.S.S.R.; DA. 1978; VOL. 20; NO 3; PP. 734-739; BIBL. 15 REF.Article

BAND STRUCTURE OF GA1-XINXAS.SCHULZE KR; NEUMANN H; UNGER K et al.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 75; NO 2; PP. 493-500; ABS. ALLEM.; BIBL. 39 REF.Article

THE PRESSURE AND TEMPERATURE DEPENDENCE OF ELECTRON ENERGY-GAPS IN SEMICONDUCTOR ALLOYS.HILL R; PITT GD.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 17; NO 6; PP. 739-742; BIBL. 16 REF.Article

INFLUENCE DES FLUCTUATIONS DE L'ETAT LOCALISE DES SOLUTIONS SOLIDES SUR LES PROPRIETES OPTIQUES ET LUMINESCENTES DES MONOCRISTAUX DE GAXIN1-XASBURDUKOV YU M; ZOTOVA NV; MAKHANBETALIEV T et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 3; PP. 488-493; BIBL. 15 REF.Article

GE-DOPED GAXIN1-XAS LED'S IN 1-MU M WAVELENGHT REGION.NAGAI H; NOGUCHI Y.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 1; PP. 450-452; BIBL. 9 REF.Article

RECOMBINAISON RADIATIVE DES MONOCRISTAUX MASSIFS DE GAXIN1-XAS OBTENUS AUX LIMITES DU DIAGRAMME D'ETATSZOTOVA NV; MAKHANBETALIEV T; MEL'TSER B YA et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 8; PP. 1507-1511; BIBL. 11 REF.Article

PHOTOELECTRON SURFACE ESCAPE PROBABILITY OF (GA, IN)AS: CS-O IN THE 0.9 TO 1.6 MU M RANGE = PROBABILITE D'EVASION DE PHOTOELECTRONS A PARTIR DE LA SURFACE DE (GA, IN)AS: CS-O DANS L'INTERVALLE DE 0,9 A 1,6 MU MFISHER DG; ENSTROM RE; ESCHER JS et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 9; PP. 3815-3823; BIBL. 35 REF.Serial Issue

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