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THE GROWTH OF A GAAS-GAALAS SUPERLATTICECHANG LL; ESAKI L; HOWARD WE et al.1973; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1973; VOL. 10; NO 1; PP. 11-16; BIBL. 19 REF.Serial Issue

THE VARIATION OF THE SOLID COMPOSITION DURING THE LPE GROWTH OF GA1-XALXASRADO WG; CRAWLEY RL.1972; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1972; VOL. 119; NO 12; PP. 1779-1780; BIBL. 5 REF.Serial Issue

HERSTELLUNG UND PHYSIKALISCHE GRUNDCHARAKTERISIERUNG VON AL1-XGAXAS-KRISTALLEN = PREPARATION ET CARACTERISATION PHYSIQUE FONDAMENTALE DES CRISTAUX AL1-XGAXASFISCHER P; KUHN G; BINDEMANN R et al.1973; KRISTALL U. TECH.; DTSCH.; DA. 1973; VOL. 8; NO 1-3; PP. 167-176; ABS. ANGL.; BIBL. 28 REF.Serial Issue

DISSOCIATION THERMIQUE DES COMPOSES AIIBIVAS2GLAZOV VM; LEBEDEV VV; MOLODYK AD et al.1979; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1979; VOL. 15; NO 10; PP. 1730-1734; BIBL. 14 REF.Article

CHALEURS DE FORMATION DES COMPOSES AIIBIVCV2 ET AIBIIICVI2GLAZOV VM; LEBEDEV VV; MOLODYK AD et al.1979; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1979; VOL. 15; NO 10; PP. 1865-1867; BIBL. 13 REF.Article

THE USE OF METALORGANICS IN THE PREPARATION OF SEMICONDUCTOR MATERIALS. V. THE FORMATION OF IN-GROUP V COMPOUNDS AND ALLOYSMANASEVIT HM; SIMPSON WI.1973; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1973; VOL. 120; NO 1; PP. 135-137; BIBL. 14 REF.Serial Issue

SHORT RANGE ORDER PARAMETERS FOR TERNARY ZINC BLENDE SUBSTITUTIONAL SOLID SOLUTIONSBRUHL HG; SCHMIDT W.1973; KRISTALL U. TECH.; DTSCH.; DA. 1973; VOL. 8; NO 1-3; PP. 127-131; ABS. ALLEM.; BIBL. 11 REF.Serial Issue

ZUM WACHSTUM VON AIIIBV-HALBLEITERN AUS NICHTSTOECHIOMETRISCHEN SCHMELZEN (II). DOTIERUNG VON GAAS UND GA1-XALXAS MIT ZINK = CROISSANCE DE SEMICONDUCTEURS AIIIBV A PARTIR DE PRODUITS DE FUSION NON STOECHIOMETRIQUES (II). DOPAGE DE GAAS ET GA1-XALXAS PAR LE ZINCJACOBS K; JACOBS B; BUTTER E et al.1972; KRISTALL U. TECH.; DTSCH.; DA. 1972; VOL. 7; NO 11; PP. 1209-1217; ABS. ANGL.; BIBL. 11 REF.Serial Issue

ABX-VERBINDUNGEN MIT NI2IN-STRUKTUR. DARSTELLUNG UND STRUKTUR DER VERBINDUNGEN CACUP (AS), SRCUP(AS), SRAGP (AS) UND EU CU AS = COMPOSES ABX DE STRUCTURE NI2IN. PREPARATION ET STRUCTURE DES COMPOSES CACUP(AS), SRCUP(AS), SRAGP(AS) ET EUCUASMEWIS A.1978; Z. NATURFORSCH., B; DEU; DA. 1978; VOL. 33; NO 9; PP. 983-986; ABS. ENG; BIBL. 11 REF.Article

DARSTELLUNG UND KRISTALLSTRUKTUR VON K3AG3AS2 UND K3CU3AS2 = PREPARATION ET STRUCTURE CRISTALLINE DE K3AG3AS2 ET K3CU3AS2SAVELSBERG G; SCHAFER H.1979; Z. NATURFORSCH., B; DEU; DA. 1979; VOL. 34; NO 7; PP. 1033-1034; ABS. ENG; BIBL. 2 REF.Article

DARSTELLUNG UND STRUKTUR DER VERBINDUNGEN PRLI2P2, PRLI2AS2 UND NDLI2AS2 = PREPARATION ET STRUCTURE DES COMPOSES PRLI2P2, PRLI2AS2 ET NDLI2AS2FISCHER HO; SCHUSTER HU.1980; Z. NATURFORSCH., B; ISSN 0340-5087; DEU; DA. 1980; VOL. 35; NO 10; PP. 1322-1323; ABS. ENG; BIBL. 4 REF.Article

DARSTELLUNG UND STRUKTUR VON K2PDAS2 = PREPARATION ET STRUCTURE DE K2PDAS2SCHUSTER MU; ROZSA S.1979; Z. NATURFORSCH., B; DEU; DA. 1979; VOL. 34; NO 8; PP. 1167-1168; ABS. ENG; BIBL. 6 REF.Article

NEUE TERNAERE ERDALKALIVERBINDUNGEN DES ARSENS MIT MANGAN = NOUVEAUX COMPOSES ALCALINOTERREUX TERNAIRES D'AS AVEC MNBRECHTEL E; CORDIER G; SCHAFER H et al.1978; Z. NATURFORSCH., B; DEU; DA. 1978; VOL. 33; NO 7; PP. 820-822; ABS. ENG; BIBL. 8 REF.Article

DARSTELLUNG UND STRUKTUR DER VERBINDUNGEN MGCUP, BACUP(AS) UND BAAGP(AS) = PREPARATION ET STRUCTURE DES COMPOSES MGCUP, BACUP(AS) ET BAAGP(AS)MEWIS A.1979; Z. NATURFORSCH., B; ISSN 0340-5087; DEU; DA. 1979; VOL. 34; NO 10; PP. 1373-1376; ABS. ENG; BIBL. 7 REF.Article

SELECTIVELY-DOPED AL0.48IN0.52AS/GA0.47IN0.53AS HETEROSTRUCTURE FIELD EFFECT TRANSISTORPEARSALL TP; HENDEL R; O'CONNOR P et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 1; PP. 5-8; BIBL. 14 REF.Article

SYNTHESE ET ETUDE STRUCTURALE D'UN NOUVEL ARSENIURE TERNAIRE DE NICKEL ET DE MOLYBDENE: NIXMO2AS3GUERIN R; POTEL M; SERGENT M et al.1974; C.R. ACAD. SCI., C; FR.; DA. 1974; VOL. 279; NO 12; PP. 517-519; BIBL. 2 REF.Article

PREPARATION DE DEUX COMPOSES DANS LE SYSTEME CA-GA-AS: CA5GA2AS6 ET CA4GA3AS5VERDIER P; MAUNAYE M; MARCHAND R et al.1975; C.R. ACAD. SCI., C; FR.; DA. 1975; VOL. 281; NO 2; PP. 457-459; ABS. ANGL.; BIBL. 3 REF.Article

ZUR STRUKTUR TERNAERER UEBERGANGSMETALLARSENIDE = SUR LA STRUCTURE D'ARSENIURE TERNAIRES DE METAUX DE TRANSITIONPFISTERER M; NAGORSEN G.1980; Z. NATURFORSCH., B; ISSN 0340-5087; DEU; DA. 1980; VOL. 35; NO 6; PP. 703-704; ABS. ENG; BIBL. 6 REF.Article

AB2X2-VERBINDUNGEN DES BERYLLIUMS MIT 2A- UND 5B-ELEMENTEN = COMPOSES AB2X2 DE BE AVEC LES ELEMENTS 2A ET 5BTIBURTIUS C; SCHUSTER HU.1979; Z. NATURFORSCH., B; DEU; DA. 1979; VOL. 34; NO 2; PP. 350-351; ABS. ENG; BIBL. 5 REF.Article

TERNARY ARSENIDES WITH LAFE4P12-TYPE STRUCTUREBRAUN DJ; JEITSCHKO W.1980; J. SOLID STATE CHEM.; GBR; DA. 1980; VOL. 32; NO 3; PP. 357-363; BIBL. 35 REF.Article

GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM-WELL LEDS EMITTING AT 1.6 MU MALAVI K; PEARSALL TP; FORREST SR et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 6; PP. 227-229; BIBL. 11 REF.Article

BERYLLIUM DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52 AS GROWN BY MOLECULAR-BEAM EPITAXYCHENG KY; CHO AY; BONNER WA et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4672-4675; BIBL. 18 REF.Article

A SIMPLE ANALYSIS OF VAPOR PHASE GROWTH; CITING AN INSTANCE OF GAXIN1-XASNAGAI H.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 8; PP. 1400-1403; BIBL. 9 REF.Article

PREPARATION ET CARACTERISATION D'ARSENIURES TERNAIRES DANS LE SYSTEME CALCIUM-GALLIUM-ARSENICVERDIER P; MAUNAYE M; MARCHAND R et al.1975; REV. CHIM. MINER.; FR.; DA. 1975; VOL. 12; NO 5; PP. 433-439; ABS. ANGL.; BIBL. 5 REF.Article

ETUDE CRISTALLOGRAPHIQUE ET MAGNETIQUE DE LA SOLUTION SOLIDE (FE1-XRUX)MNAS.DEYRIS B; ROY MONTREUIL J; MICHEL A et al.1975; MATER. RES. BULL.; U.S.A.; DA. 1975; VOL. 10; NO 7; PP. 603-606; ABS. ANGL.; BIBL. 9 REF.Article

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