Structure-property relationship in a thin film composite reverse osmosis membraneARTHUR, S. D.Journal of membrane science. 1989, Vol 46, Num 2-3, pp 243-260, issn 0376-7388Conference Paper

Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405 nmCAO, X. A; YAN, C. H; D'EVELYN, M. P et al.Journal of crystal growth. 2004, Vol 269, Num 2-4, pp 242-248, issn 0022-0248, 7 p.Article

Important interaction effects in the growth of InGaN violet light emitting diodes by MOCVDGRANDUSKY, J. R; JAMIL, M; JINDAL, V et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 59410W.1-59410W.9, issn 0277-786X, isbn 0-8194-5946-1, 1VolConference Paper

Partial dislocations and stacking faults in 4H-SiC PiN diodesTWIGG, M. E; STAHLBUSH, R. E; FATEMI, M et al.Journal of electronic materials. 2004, Vol 33, Num 5, pp 472-476, issn 0361-5235, 5 p.Conference Paper

Stacking-fault formation and propagation in 4H-SiC PiN diodes : III-V Nitrides and Silicon CarbideSTAHLBUSH, R. E; FATEMI, M; FEDISON, J. B et al.Journal of electronic materials. 2002, Vol 31, Num 5, pp 370-375, issn 0361-5235Conference Paper

Fluorinated poly (ether sulfone)sFEIRING, A. E; WONCHOBA, E. R; ARTHUR, S. D et al.Journal of polymer science. Part A. Polymer chemistry. 1990, Vol 28, Num 10, pp 2809-2819, issn 0887-624X, 11 p.Article

Reaction of perfluoroalkylethylens with nucleophilesFEIRING, A. E; HOVEY, M. C; ARTHUR, S. D et al.Journal of fluorine chemistry. 1984, Vol 24, Num 1, pp 125-132, issn 0022-1139Article

High quality interlayer dielectric for 4H-SiC DMOSFETsOKAYAMA, T; ARTHUR, S. D; WALDRAB, P et al.Semiconductor science and technology. 2007, Vol 22, Num 11, pp 1193-1199, issn 0268-1242, 7 p.Article

Influence of GaN material characteristics on device performance for blue and ultraviolet light-emitting diodesMERFELD, D. W; CAO, X. A; LEBOEUF, S. F et al.Journal of electronic materials. 2004, Vol 33, Num 11, pp 1401-1405, issn 0361-5235, 5 p.Article

¹³C and 2D NMR analysis of propylene polymers made with α-diimine Late metal catalystsMCCORD, E. F; MCLAIN, S. J; NELSON, L. T. J et al.Macromolecules. 2001, Vol 34, Num 3, pp 362-371, issn 0024-9297Article

Homoepitaxial growth and electrical characterization of GaN-based Schottky and light-emitting diodesCAO, X. A; LU, H; KAMINSKY, E. B et al.Journal of crystal growth. 2007, Vol 300, Num 2, pp 382-386, issn 0022-0248, 5 p.Article

Cathodoluminescence mapping and selective etching of defects in bulk GaNnHAI LU; CAO, X. A; LEBOEUF, S. F et al.Journal of crystal growth. 2006, Vol 291, Num 1, pp 82-85, issn 0022-0248, 4 p.Article

Fabrication, characterization and applications of AlInGaN light-emitting diodesCAO, X. A; ARTHUR, S. D; EBONG, A et al.Proceedings - Electrochemical Society. 2003, pp 224-237, issn 0161-6374, isbn 1-56677-391-1, 14 p.Conference Paper

Silicon and silicon dioxide thermal bonding for silicon-on-insulator applicationsBLACK, R. D; ARTHUR, S. D; GILMORE, R. S et al.Journal of applied physics. 1988, Vol 63, Num 8, pp 2773-2777, issn 0021-8979, 1Article

Bias-stress induced threshold voltage and drain current instability in 4H-SiC DMOSFETsOKAYAMA, T; ARTHUR, S. D; GARRETT, J. L et al.Solid-state electronics. 2008, Vol 52, Num 1, pp 164-170, issn 0038-1101, 7 p.Article

Microstructural origin of leakage current in GaN/InGaN light-emitting diodesCAO, X. A; TEETSOV, J. A; SHAHEDIPOUR-SANDVIK, F et al.Journal of crystal growth. 2004, Vol 264, Num 1-3, pp 172-177, issn 0022-0248, 6 p.Article

Growth and characterization of blue and near-ultraviolet light-emitting diodes on bulk GaNCAO, X. A; LEBOEUF, S. F; ARTHUR, S. D et al.SPIE proceedings series. 2004, pp 48-53, isbn 0-8194-5468-0, 6 p.Conference Paper

Carrier capture and recombination at localized states in InGaN/GaN light-emitting diodesCAO, X. A; LEBOEUF, S. F; ROWLAND, L. B et al.Proceedings - Electrochemical Society. 2003, pp 166-173, issn 0161-6374, isbn 1-56677-349-0, 8 p.Conference Paper

Aromatic/cycloaliphatic polyamide membraneSUNDET, S. A; ARTHUR, S. D; CAMPOS, D et al.Desalination (Amsterdam). 1987, Vol 64, pp 259-269, issn 0011-9164Conference Paper