EFFECTS OF SURFACE TREATMENTS ON THE ELECTRICAL CHARACTERISTICS OF BIPOLAR TRANSISTORS WITH POLYSILICON EMITTERSSOEROWIRDJO B; ASHBURN P.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 5; PP. 495-498; BIBL. 14 REF.Article

OBSERVATIONS OF DISLOCATIONS AND JUNCTION IRREGULARITIES IN BIPOLAR TRANSISTORS USING THE E.B.I.C. MODE OF THE SCANNING ELECTRON MICROSCOPEASHBURN P; BULL CJ.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 1; PP. 105-110; BIBL. 14 REF.Article

GENERATION/RECOMBINATION OF CARRIERS IN P-N JUNCTIONS.MORGAN DV; ASHBURN P.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 7; PP. 85-86; BIBL. 6 REF.Article

THE ROLE OF RADIATION DAMAGE ON THE CURRENT-VOLTAGE CHARACTERISTICS OF P-N JUNCTIONS.ASHBURN P; MORGAN DV.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 7; PP. 689-698; BIBL. 17 REF.Article

THE USE OF THE ELECTRON-BEAM-INDUCED CURRENT MODE OF THE SEM FOR OBSERVING EMITTER/COLLECTOR PIPES IN BIPOLAR TRANSISTORSASHBURN P; BULL CJ; BEALE JRA et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 5; PP. 3472-3477; BIBL. 10 REF.Article

SEM AND TEM OBSERVATIONS OF EMITTER-COLLECTOR PIPES IN BIPOLAR TRANSISTORSGOWERS JP; BULL CJ; ASHBURN P et al.1980; J. MICR.; GBR; DA. 1980; VOL. 118; NO 3; PP. 329-336; BIBL. 15 REF.Article

A STUDY OF DIFFUSED BIPOLAR TRANSISTORS BY ELECTRON MICROSCOPYBULL CJ; ASHBURN P; GOWERS JP et al.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 9; PP. 953-966; BIBL. 27 REF.Article

An I²L clocked gate array for undergraduate design exercisesJESSHOPE, C. R; ASHBURN, P.IEE proceedings. Part I. Solid-state and electron devices. 1985, Vol 132, Num 2, pp 54-61, issn 0143-7100Article

An I²L clocked gate array for undergraduate design exercisesJESSHOPE, C. R; ASHBURN, P.IEE proceedings. Part E. Computers and digital techniques. 1985, Vol 132, Num 2, pp 54-61, issn 0143-7062Article

EFFECTS OF DISLOCATIONS IN SILICON TRANSISTORS WITH IMPLANTED EMITTERSBULL C; ASHBURN P; BOOKER GR et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 1; PP. 95-104; BIBL. 22 REF.Article

Self-aligned transistors with polysilicon emitters for bipolar VLSICUTHBERTSON, A; ASHBURN, P.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 2, pp 242-247, issn 0018-9383Article

The benefits of fluorine in pnp polysilicon emitter bipolar transistorsMOISEIWITSCH, N. E; ASHBURN, P.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 7, pp 1249-1256, issn 0018-9383Article

Comparison of silicon bipolar and GaAlAs/GaAs heterojunction bipolar technologies using a propagation delay expressionASHBURN, P; REZAZADEH, A. A.GEC journal of research. 1988, Vol 6, Num 3, pp 176-182, issn 0264-9187Article

An investigation of the tradeoff between enhanced gain and base doping in polysilicon emitter bipolar transistorsCUTHBERTSON, A; ASHBURN, P.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 11, pp 2399-2407, issn 0018-9383Article

EFFECTS OF DISLOCATIONS IN SILICON TRANSISTORS WITH IMPLANTED BASES.ASHBURN P; BULL C; NICHOLAS KH et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 9; PP. 731-740; BIBL. 29 REF.Article

Predicted propagation delay of Si/SiGe heterojunction bipolar ECL circuitsSHAFI, Z. A; ASHBURN, P; PARKER, G. J et al.IEEE journal of solid-state circuits. 1990, Vol 25, Num 5, pp 1268-1276, issn 0018-9200, 9 p.Article

Optimisation of BiCMOS buffers for low voltage applicationsROUTLEY, P; BRUNNSCHWEILER, A; ASHBURN, P et al.Electronics Letters. 1994, Vol 30, Num 13, pp 1046-1048, issn 0013-5194Article

An accurate analytical BiCMOS delay expression and its application to optimizing high-speed BiCMOS circuitsWEN FANG; BRUNNSCHWEILER, A; ASHBURN, P et al.IEEE journal of solid-state circuits. 1992, Vol 27, Num 2, pp 191-202, issn 0018-9200Article

Heterojunction tunnelling model for pnp and npn polysilicon emitter bipolar transistorsPOST, I. R. C; ASHBURN, P; NOUAILHAT, A et al.Electronics Letters. 1992, Vol 28, Num 25, pp 2276-2277, issn 0013-5194Article

Investigation of boron diffusion in polysilicon and its application to the design of p-n-p polysilicon emitter bipolar transistors with shallow emitter junctionsPOST, I. R. C; ASHBURN, P.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 11, pp 2442-2451, issn 0018-9383Article

Comparison of experimental and computed results on arsenic- and phosphorus-doped polysilicon emitter bipolar transistorsASHBURN, P; ROULSTON, D. J; SELVAKUMAR, C. R et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 6, pp 1346-1353, issn 0018-9383Article

Emitter resistance of arsenic- and phosphorus-doped polysilicon emitter transistorsCHOR, E. F; ASHBURN, P; BRUNNSCHWEILER, A et al.IEEE electron device letters. 1985, Vol 6, Num 10, pp 516-518, issn 0741-3106Article

The use of an interface anneal to control the base current and emitter resistance of p-n-p polysilicon emitter bipolar transistorsPOST, I. R. C; ASHBURN, P.IEEE electron device letters. 1992, Vol 13, Num 8, pp 408-410, issn 0741-3106Article

Effects of rapid thermal processing on the current gain and emitter resistance of polysilicon emitter bipolar transistorsCASTANER, L. M; ASHBURN, P; WOLSTENHOLME, G. R et al.IEEE electron device letters. 1991, Vol 12, Num 1, pp 10-12, issn 0741-3106, 3 p.Article

An analytical maximum toggle frequency expression and its application to optimizing high-speed ECL frequency dividersWEN FANG; BRUNNSCHWEILER, A; ASHBURN, P et al.IEEE journal of solid-state circuits. 1990, Vol 25, Num 4, pp 920-931, issn 0018-9200, 12 p.Article