AlGaN multiple quantum well based deep UV LEDs and their applicationsASIF KHAN, M.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 7, pp 1764-1770, issn 1862-6300, 7 p.Conference Paper

Evolution of the lower arc crust in Kohistan, N. Pakistan : Temporal arc magmatism through early, mature and intra-arc rift stagesASIF KHAN, M; QASIM JAN, M; WEAVER, B.L et al.Himalaya-Karakoram-Tibet workshop. 1993, Num 74, pp 123-138Conference Paper

Strain-engineered novel III-N electronic devices with high quality dielectric/semiconductor interfacesASIF KHAN, M; SHUR, M. S; SIMIN, G et al.Physica status solidi. A. Applied research. 2003, Vol 200, Num 1, pp 155-160, issn 0031-8965, 6 p.Conference Paper

Gallium nitride opens the way to visible-blind UV detectorsSHUR, M. S; ASIF KHAN, M.Laser focus world. 1999, Vol 35, Num 6, pp 81-83, issn 1043-8092Article

Dry etching of Al_xGa_1-xN using chemically assisted ion beam etchingPING, A. T; ASIF KHAN, M; ADESIDA, I et al.Semiconductor science and technology. 1997, Vol 12, Num 1, pp 133-135, issn 0268-1242Article

Structures in the hangingwall of the Main Boundary Thrust : Post-folding thrust and normal faults from the Kotal-Pass area, Kohar range, N. PakistanASIF KHAN, M; KARAMAT ALI TURIHMANIH; IFTIKHAR AHMED ABBASSI et al.Pakistan geological congress. 1990, Vol 23, pp 175-186, issn 0367-4045Conference Paper

Detection of sand-covered geologic features in the Arabian Peninsula using SIR-C/K-SAR dataDABBAGH, A. E; AL-HINAI, K. G; ASIF KHAN, M et al.Remote sensing of environment. 1997, Vol 59, Num 2, pp 375-382, issn 0034-4257Article

The Sapat mafic-ultramafic complex, Kohistan arc, North PakistanQASIM JAN, M; ASIF KHAN, M; SUFYAN QAZI, M et al.Himalaya-Karakoram-Tibet workshop. 1993, Num 74, pp 113-121Conference Paper

Geochemical and isotopic constraints on subduction polarity, magma sources, and palaeogeography of the Kohistan intra-oceanic arc, northern Pakistan HimalayaASIF KHAN, M; STERN, R. J; GRIBBLE, R. F et al.Journal of the Geological Society (London). 1997, Vol 154, pp 935-946, issn 0016-7649, 6Article

Chemically assisted ion beam etching of gallium nitride : III-IV nitrides and silicon carbidePING, A. T; YOUTSEY, C; ADESIDA, I et al.Journal of electronic materials. 1995, Vol 24, Num 4, pp 229-234, issn 0361-5235Article

High electron mobility GaN/Al_xGa_1-xN heterostructures grown by low-pressure metalorganic chemical vapor depositionASIF KHAN, M; VAN HOVE, J. M; KUZNIA, J. N et al.Applied physics letters. 1991, Vol 58, Num 21, pp 2408-2410, issn 0003-6951, 3 p.Article

Power stability of AlGaN/GaN HFETs at 20 W/mm in the pinched-off operation modeKOUDYMOV, A; WANG, C. X; ADIVARAHAN, V et al.IEEE electron device letters. 2007, Vol 28, Num 1, pp 5-7, issn 0741-3106, 3 p.Article

Selectively doped high-power AlGaN/InGaN/GaN MOS-DHFETADIVARAHAN, V; GAEVSKI, M; KOUDYMOV, A et al.IEEE electron device letters. 2007, Vol 28, Num 3, pp 192-194, issn 0741-3106, 3 p.Article

Stable 20W/mm AlGaN-GaN MOSHFETSIMIN, G; ADIVARAHAN, V; YANG, J et al.Electronics Letters. 2005, Vol 41, Num 13, pp 774-775, issn 0013-5194, 2 p.Article

Metal semiconductor field effect transistor based on single crystal GaNASIF KHAN, M; KUZNIA, J. N; BHATTARAI, A. R et al.Applied physics letters. 1993, Vol 62, Num 15, pp 1786-1787, issn 0003-6951Article

Reflective filters based on single-crystal GaN/Al_xGa_1-xN multilayers deposited using low-pressure metalorganic chemical vapor depositionASIF KHAN, M; KUZNIA, J. N; VAN HOVE et al.Applied physics letters. 1991, Vol 59, Num 12, pp 1449-1451, issn 0003-6951Article

Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substratesKUZNIA, J. N; ASIF KHAN, M; OLSON, D. T et al.Journal of applied physics. 1993, Vol 73, Num 9, pp 4700-4702, issn 0021-8979Article

Deposition and surface characterization of high quality single crystal GaN layersASIF KHAN, M; KUZNIA, J. N; OLSON, D. T et al.Journal of applied physics. 1993, Vol 73, Num 6, pp 3108-3110, issn 0021-8979Article

The tectonic history of Kohistan and its implications for Himalayan structure = Tectonique de Kohistan et ses implications sur la structure de l'HimalayaCOWARD, M. P; BUTLER, R. W. H; ASIF KHAN, M et al.Journal of the Geological Society (London). 1987, Vol 144, Num 3, pp 377-391, issn 0016-7649Article

The 1.6-kV AlGaN/GaN HFETsTIPIMENI, N; KOUDYMOV, A; ADIVARAHAN, V et al.IEEE electron device letters. 2006, Vol 27, Num 9, pp 716-718, issn 0741-3106, 3 p.Article

GaN/AlN digital alloy short-period superlattices by switched atomic layer metalorganic chemical vapor depositionASIF KHAN, M; KUZNIA, J. N; OLSON, D. T et al.Applied physics letters. 1993, Vol 63, Num 25, pp 3470-3472, issn 0003-6951Article

Temperature-Dependent RF Large-Signal Model of GaN-Based MOSHFETsJIE DENG; WEIKE WANG; HALDER, Subrata et al.IEEE transactions on microwave theory and techniques. 2008, Vol 56, Num 12, pp 2709-2716, issn 0018-9480, 8 p., 1Article

Deep ultraviolet light emitting diodes using AlGaN quantum well active regionASIF KHAN, M; SHATALOV, Maxim; ADIVARAHAN, Vinod et al.Proceedings - Electrochemical Society. 2003, pp 152-157, issn 0161-6374, isbn 1-56677-349-0, 6 p.Conference Paper

Discussion on geochemical and isotopic constraints on subduction polarity, magma sources and palaeogeography of the Kohistan Arc, northern PakistanCOLLINS, A. S; ASIF KHAN, M; STERN, R. J et al.Journal of the Geological Society (London). 1998, Vol 155, pp 893-895, issn 0016-7649, 5Conference Paper

Dry etching of GaN using chemically assisted ion beam etching with HCl and H₂/Cl₂PING, A. T; SCHMITZ, A. C; ASIF KHAN, M et al.Journal of electronic materials. 1996, Vol 25, Num 5, pp 825-829, issn 0361-5235Article