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CONSIDERAZIONI SU UN CASO DI PNEUMOPERITONEO SPONTANEO DA NOI OSSERVATO E REVISIONE DELLA LETTERATURA = CONSIDERATIONS SUR UN CAS DE PNEUMOPERITOINE SPONTANE, OBSERVATION PERSONNELLE ET REVUE DE LA LITTERATUREFABBRUCCI P; ATTOLINI G.1980; MINERVA MED.; ISSN 0026-4806; ITA; DA. 1980; VOL. 71; NO 35; PP. 2511-2514; ABS. ENG; BIBL. 21 REF.Article

DETERMINATION OF GALLIUM BY ATOMIC ABSORPTION SPECTROMETRY WITH A GRAPHITE FURNACE ATOMIZERPELOSI C; ATTOLINI G.1976; ANAL. CHIM. ACTA; PAYS-BAS; DA. 1976; VOL. 84; NO 1; PP. 179-183; BIBL. 16 REF.Article

DETERMINATION OF TRACE AMOUNTS OF GERMANIUM IN CDSPELOSI C; ATTOLINI G.1979; MIKROCHIM. ACTA; AUT; DA. 1979; VOL. 1; NO 3-4; PP. 199-205; ABS. GER; BIBL. 10 REF.Article

INTERFACE KINETICS AND THE VAPOUR PHASE MASS TRANSPORT IN CLOSED TUBE CDS:I2-SYSTEMPAORICI C; ATTOLINI G.1979; KRISTALL U. TECH.; DDR; DA. 1979; VOL. 14; NO 6; PP. 645-651; ABS. GER; BIBL. 11 REF.Article

IODINE DETECTION IN IODINE-DOPED CDS SINGLE CRYSTALS.PAORICI C; PELOSI C; ATTOLINI G et al.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 37; NO 1; PP. 9-12; BIBL. 16 REF.Article

COULO-BIPOTENTIOMETRIC TITRATION IN THE ANALYSIS OF BROMINE IN BROMINE-DOPED CADMIUM CHALCOGENIDESPAORICI C; PELOSI C; ATTOLINI G et al.1975; J. ELECTROANAL. CHEM. INTERFACIAL ELECTROCHEM.; NETHERL.; DA. 1975; VOL. 61; NO 2; PP. 213-217; BIBL. 9 REF.Article

EQUILIBRIUM CALCULATIONS FOR VPE-INGAASPFRANCHI S; PELOSI C; ATTOLINI G et al.1981; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1981; VOL. 16; NO 1; PP. 1-4; ABS. ENG; BIBL. 26 REF.Article

Solutions compactes pour les poids lourds = Compact solutions for the heavy trucksBARBERO, S; ATTOLINI, G.Evolution (Ed. française). 1996, Num 3, pp 19-21, issn 1104-8190Article

Hardening effect in Zn-doped cadmium sulphide crystalsATTOLINI, G; PAORICI, C.Journal of crystal growth. 1987, Vol 82, Num 3, pp 356-360, issn 0022-0248Article

COULO-BIPOTENTIOMETRIC TITRATIONS IN THE ANALYSIS OF CHLORINE IN CHLORINE-DOPED CADMIUM CHALCOGENIDESPELOSI C; PAORICI C; ATTOLINI G et al.1974; J. ELECTROANAL. CHEM. INTERFACIAL ELECTROCHEM.; NETHERL.; DA. 1974; VOL. 57; NO 2; PP. 259-264; BIBL. 16 REF.Article

CHEMICAL-TRANSPORT PROPERTIES OF THE: CD:TE:CL:N SYSTEMPAORICI C; ATTOLINI G; PELOSI C et al.1973; J. CRYST. GROWTH; NETHERL.; DA. 1973; VOL. 18; NO 3; PP. 289-293; BIBL. 24 REF.Serial Issue

CLOSED-TUBE CHEMICAL-TRANSPORT MECHANISMS IN THE CE:TE:H:CL:N SYSTEM.PAORICI C; PELOSI C; ATTOLINI G et al.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 28; NO 3; PP. 348-364; BIBL. 17 REF.Article

Design guidelines for thermo-photo-voltaic generator: The critical role of the emitter sizeATTOLINI, G; BOSI, M; FERRARI, C et al.Applied energy. 2013, Vol 103, pp 618-626, issn 0306-2619, 9 p.Article

Skeletal and hollow crystals of cadmium sulphide grown under time-increasing supersaturationATTOLINI, G; PAORICI, C; RAMASAMY, P et al.Journal of crystal growth. 1986, Vol 78, Num 1, pp 181-184, issn 0022-0248Article

Nanoindentation studies of (111) GaAs/InP epilayersNAVAMATHAVAN, R; ARIVUOLI, D; ATTOLINI, G et al.Applied surface science. 2001, Vol 180, Num 1-2, pp 119-125, issn 0169-4332Article

CoGaInS4: a new layered compoundRAZZETTI, C; ATTOLINI, G; CURTI, M et al.Materials letters (General ed.). 1985, Vol 3, Num 11, pp 449-452, issn 0167-577XArticle

Lattice strain relaxation in GaAs/InP(001) and GaAs/GaP(001) heterostructuresFRANCESIO, L; FRANZOSI, P; ATTOLINI, G et al.Solid state communications. 1996, Vol 97, Num 9, pp 781-783, issn 0038-1098Article

Electron beam induced current and cathodoluminescence study of the recombination activity of stacking faults and hillocks in hydride vapor phase epitaxy InPATTOLINI, G; FRIGERI, C; PELOSI, C et al.Applied physics letters. 1986, Vol 49, Num 3, pp 167-169, issn 0003-6951Article

Interface-kinetical limitations in closed-tube chemical vapour transport (II). The CdTe:NH4Cl growth systemPAORICI, C; PESSINA, V; ZECCHINA, L et al.Crystal research and technology (1979). 1986, Vol 21, Num 10, pp 1265-1267, issn 0232-1300Article

Productivity function for multireactional CVT and its application to iodine transport of cadmium sulphideATTOLINI, G; PAORICI, C; ZECCHINA, L et al.Journal of crystal growth. 1990, Vol 99, Num 1-4, pp 731-736, issn 0022-0248, 6 p., 2Conference Paper

Relationship between dislocation generation, vapour phase supersaturation and growth rate in InP layers obtained by vapour phase epitaxyFRIGERI, C; GLEICHMANN, R; PELOSI, C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1991, Vol 10, Num 3, pp 197-207Article

Heterogeneous nucleation of misfit dislocations in InGaP/GaAs layers grown by MOVPEFRIGERI, C; ATTOLINI, G; PELOSI, C et al.Physica status solidi. A. Applied research. 2003, Vol 195, Num 1, pp 56-60, issn 0031-8965, 5 p.Conference Paper

Raman scattering characterization of strained GaAs/InAs layers grown by movpeLOTTICI, P. P; ATTOLINI, G; CHIMENTI, E et al.Solid state communications. 1996, Vol 99, Num 8, pp 537-540, issn 0038-1098Article

Effects of group III cation substitution in the Raman spectra of some defective chalcopyritesATTOLINI, G; BINI, S; LOTTICI, P. P et al.Crystal research and technology (1979). 1992, Vol 27, Num 5, pp 685-690, issn 0232-1300Article

Synthesis and characterization of the layered compounds in the ZnIn2S4-ZnIn2Se4 systemRAZZETTI, C; ATTOLINI, G; BINI, S et al.Physica status solidi. B. Basic research. 1992, Vol 173, Num 2, pp 525-531, issn 0370-1972Article

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