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ELECTRON ESCAPE DEPTHS IN GERMANIUMGANT H; MOENCH W.1981; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1981; VOL. 105; NO 1; PP. 217-224; BIBL. 24 REF.Article

THE BACKSCATTERING FACTOR IN AUGER ELECTRON SPECTROSCOPYJABLONSKI A.1979; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1979; VOL. 87; NO 2; PP. 539-548; BIBL. 29 REF.Article

INTERPRETATION OF THE ELECTRON CAPTURE BY MULTIPHONON EMISSION AT NATIVE LEVELS IN LPE GALLIUM ARSENIDEMORANTE JR; CARCELLER JE; BARBOLLA J et al.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 7; PP. L175-L179; BIBL. 13 REF.Article

ELECTRON-BEAM DELINEATION OF PB1-XSNXTE FILMS ON BAF2BECK WA; BUCHNER SP; BYER NE et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 35; NO 2; PP. 163-165; BIBL. 7 REF.Article

AUGER ELECTRON SPECTROSCOPY: CHEMICAL INFORMATIONHOUSTON JE; RYE RR.1983; COMMENTS ON SOLID STATE PHYSICS; ISSN 0308-1206; USA; DA. 1983; VOL. 10; NO 6; PP. 233-251; BIBL. 44 REF.Article

ION-INDUCED AUGER-ELECTRON EMISSION FROM ALUMINUMBARAGIOLA RA; ALONSO EV; RAITI H JL et al.1982; PHYS. REV. A; ISSN 0556-2791; USA; DA. 1982; VOL. 25; NO 4; PP. 1969-1976; BIBL. 45 REF.Article

LMM AUGER SPECTRA OF SELENIUM AND SOME OF ITS COMPOUNDSBAHL MK; WATSON RL; IRGOLIC KJ et al.1980; J. CHEM. PHYS.; ISSN 0021-9606; USA; DA. 1980; VOL. 72; NO 7; PP. 4069-4077; BIBL. 40 REF.Article

THEORY OF AUGER XVV SPECTRA OF SOLIDS: MANY BODY EFFECTS IN INCOMPLETELY FILLED BANDSCINI M.1979; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1979; VOL. 87; NO 2; PP. 483-500; BIBL. 21 REF.Article

THE AUGER SPECTRUM OF 99TCCHEN TP; WOLF EL; GIORGI AL et al.1982; SURFACE SCIENCE; ISSN 0039-6028; NLD; DA. 1982; VOL. 122; NO 2; PP. L613-L618; BIBL. 9 REF.Article

AUGER ELECTRON SPECTROSCOPY STUDY OF GAAS SUBSTRATE CLEANING PROCEDURESZILKO JL; WILLIAMS RS.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 2; PP. 406-408; BIBL. 10 REF.Article

THE INTERACTION OF SULPHUR DIOXIDE WITH THE ZN(0001) SURFACEGAINEY TC; HOPKINS BJ.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 5; PP. 975-983; BIBL. 13 REF.Article

ELECTRON AND ION BEAM EFFECTS IN AMORPHOUS SIO2 AND SI3N4 FILMS FOR ELECTRONIC DEVICESHEZEL R.1982; RADIATION EFFECTS; ISSN 0033-7579; GBR; DA. 1982; VOL. 65; NO 1-4; PP. 101-106; BIBL. 13 REF.Article

INTERFACE COMPOSITION STUDIES OF THERMALLY OXIDIZED GAAS USING AUGER DEPTH PROFILINGXUN WANG; REYES MENA A; LICHTMAN D et al.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 4; PP. 851-854; BIBL. 13 REF.Article

AN AES EVALUATION OF CLEANING AND ETCHING METHODS FOR INSBAURET FD.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 12; PP. 2752-2755; BIBL. 17 REF.Article

AES STUDY OF BORON DIFFUSION IN SILICON FROM A BORON NITRIDE SOURCE WITH HYDROGEN INJECTIONPIGNATEL G; QUEIROLO G.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 10; PP. 1805-1810; BIBL. 12 REF.Article

DEEP-HOLE INTERFERENCES IN PHOTON-INDUCED AUGER EMISSION FROM SOLIDSABRAHAM IBRAHIM S; CAROLI B; CAROLI C et al.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 12; PP. 6702-6712; BIBL. 11 REF.Article

ANALYSE DE LA SILICE VITREUSE EN SPECTROMETRIE D'ELECTRONS AUGER: INFLUENCE DE L'ENERGIE PRIMAIRELEGER D; LACHARME JP; CHAMPION P et al.1978; C.R. ACAD. SCI., C; FRA; DA. 1978; VOL. 287; NO 6; PP. 223-226; ABS. ENG; BIBL. 10 REF.Article

APPLICATION OF AUGER ELECTRON SPECTROSCOPY TO THE STUDY OF METAL-SEMICONDUCTOR INTERFACIAL REACTIONSUCHOL KIM; KAMMURA W; IWAMI M et al.1980; TECHNOL. REP. OSAKA UNIV.; ISSN 0030-6177; JPN; DA. 1980; VOL. 30; NO 1517-1550; PP. 81-87; BIBL. 14 REF.Article

DERIVATION OF PHONON ASSISTED AUGER TRANSITION PROBABILITIES IN SEMICONDUCTORSTROSTER F.1978; Z. NATURFORSCH., A; DEU; DA. 1978; VOL. 33; NO 11; PP. 1251-1260; BIBL. 24 REF.Article

APPLICATION OF MONTE CARLO CALCULATION TO FUNDAMENTALS OF SCANNING AUGER ELECTRON MICROSCOPY.SHIMIZU R; ARATAMA M; ICHIMURA S et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 10; PP. 692-694; BIBL. 9 REF.Article

K-LL AUGER SPECTRUM OF ALUMINIUM.DUFOUR G; MARIOT JM; NILSSON JATKO PE et al.1976; PHYS. SCRIPTA; SUEDE; DA. 1976; VOL. 13; NO 6; PP. 370-372; BIBL. 16 REF.Article

CALCUL DES DUREES DES PROCESSUS AUGER DANS LES SOLUTIONS SOLIDES INGAASP PGARBUZOV DZ; SOKOLOVA ZN; KHALFIN VB et al.1983; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1983; VOL. 53; NO 2; PP. 315-319; BIBL. 10 REF.Article

CONTRIBUTIONS TO SCREENING IN THE SOLID STATE BY ELECTRON SYSTEMS OF REMOTE ATOMS: EFFECTS TO PHOTOELECTRON AND AUGER TRANSITIONSWAGNER CD; TAYLOR JA.1982; JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA; ISSN 0368-2048; NLD; DA. 1982; VOL. 28; NO 3; PP. 211-217; BIBL. 28 REF.Article

THEORIE DE LA DEPENDANCE ANGULAIRE DE L'EMISSION ELECTRONIQUE DES SURFACES POLYCRISTALLINES SOUS BOMBARDEMENT ELECTRONIQUEBUI MINH DUC.1981; VIDE COUCHES MINCES; ISSN 0223-4335; FRA; DA. 1981; VOL. 36; NO 205; PP. 151-173; ABS. ENG; BIBL. 13 REF.Article

THE DETERMINATION OF SULFUR ION IMPLANTATION PROFILES IN GAAS USING AUGER ELECTRON SPECTROSCOPYPARK YS; GRANT JT; HAAS TW et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 2; PP. 809-812; BIBL. 8 REF.Article

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